FOTOFET Search Results

fotofet

Contextual Info: FOTOFET SILICO N EP IT AXIAL JUNCTION N CH A N N EL FIELD EFFECT TRA N SISTO R G E O M E T R Y 400 • • • • • U L T R A H IG H S E N S IT IV IT Y LOW D A R K C U R R E N T FAST RESPONSE PHOTOTUBE R EP LA C EM EN T FLAT G L A S S TOP FOR E X T E R N A L O PTICS

FF627

Contextual Info: FOTOFET FF627 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR G E O M E T R Y 400 • • • • • ULTRA HIGH SENSITIVITY LOW DARK CURRENT FAST RESPONSE PHOTOTUBE REPLACEMENT FLAT GLASS TOP FOR EXTERNAL OPTICS ELECTRICAL DATA A B S O L U T E M AXIM U M R A T IN G S

teledyne crystalonics

Abstract: fotofet FF413
Contextual Info: FOTOFET SILICON EP ITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR GEOMETRY 446. PG. 58 • • • • • HIGH SENSITIVITY LOW DARK CURRENT FAST RESPONSE LOW R on FLAT GLASS TOP FOR EXTERNAL OPTICS ELECTRICAL DATA ABSOLUTE M AXIM U M RATING Drain to Source Voltage

fotofet

Abstract: FF102
Contextual Info: TELEDYNE COMPONENTS EÒ E a T l? t.Q 2 D QQQbS7la 1 m r-v t- bf FOTOFETTM EPÌT a X IA L j u n c t i o n N-CHANNEL FIELD EFFECT T RA N SISTO R s il ic o n G E O M E T R Y 282 • • • • HIGH SEN SITIVITY LOW D A R K CURRENT FAST RESPONSE PHOTOTUBE REPLACEMENT

fotofet

Abstract: FF413
Contextual Info: TELEDYNE EâE COMPONENTS D □□GbSTT 7 I — T - m ^ i f lW b G E FOTOFET SILICON E PITA XIA L JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR FF413 GEOMETRY 446 • HIGH SENSITIVITY • LOW DARK CURRENT • FAST RESPONSE • LOW R on • FLAT GLASS TOP FOR EXTERNAL OPTICS

FF102

Abstract: Crystalonics teledyne crystalonics
Contextual Info: FOTOFETTM SILICON E P IT A X IA L JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR GEOMETRY 282, PG. 57 • • • • HIGH SEN SITIVITY LOW DARK CURRENT FAST RESPONSE PHOTOTUBE REPLACEM ENT ELECTRICAL DATA A B S O L U T E M A X IM U M R A T IN G S Drain to Source Voltage

Contextual Info: FOTOFETTM FF626 SI LICON E P IT A X IA L JUNCTION N-CHANNEL FIELD EFFECT T R A N SIST O R G E O M E T R Y 40 0 • • • • U LTRA HIGH S EN SIT IV IT Y LOW D A R K C URRENT FAST RESPONSE PHOTOTUBE REPLACEM ENT ELECTRICAL DA T A A B S O L U T E M A X IM U M R A T IN G S

Contextual Info: FOTOFET FF102 SILICON EPITAXIAL JUNCTION N-CHANNEL FIELD EFFECT TRANSISTOR GEOMETRY 282 • • • • t H IM MAX. HIGH SENSITIVITY LOW DARK CURRENT FAST RESPONSE PHOTOTUBE REPLACEMENT ELECTRICAL DATA ABSOLUTE MAXIMUM RATINGS 15 Volts BVdso Gate to Source Voltage