FPD6836 Search Results

pseudomorphic HEMT

Abstract: TRANSISTOR c 5578 B TRANSISTOR BC 135 0604HQ FPD6836SOT343 OT343 3.5GHz BJT bc 548 transistor transistor bc 731 transistor bc 564
Contextual Info: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT Package: SOT343 Product Description The FPD6836SOT343 is a packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT . It utilizes a 0.25µmx750µm

FPD6836SOT343

Abstract: rogers 4003
Contextual Info: EB6836SOT343AC FPD6836SOT343 2.0GHz LNA EVALUATION BOARD DESCRIPTION AND APPLICATIONS The data given below is based on measurements taken on the evaluation board described in this data sheet. This evaluation board is a single-ended, dual biased, low noise amplifier. It

FPD6836P70

Abstract: FPD6836 Filtronic* FPD6836 fpd6836p
Contextual Info: PRELIMINARY • FPD6836P70 HI-FREQUENCY PACKAGED PHEMT PERFORMANCE ♦ 22 dBm Output Power P1dB ♦ 19 dB Power Gain (G1dB) at 1.85 GHz ♦ 0.5 dB Noise Figure at 1.85 GHz ♦ 32 dBm Output IP3 ♦ 50% Power-Added Efficiency at 1.85 GHz ♦ Useable Gain to 20 GHz

FPD6836SOT343

Abstract: FPD6836SOT343E MIL-HDBK-263 te 804 Filtronic 423
Contextual Info: FPD6836SOT343 Datasheet v2.1 LOW NOISE HIGH LINEARITY PACKAGED PHEMT PACKAGE: FEATURES 1850MHZ : • • • • • 0.5 dB Noise Figure at 25% Bias 19 dBm Output Power (P1dB) 19 dB Small-Signal Gain (SSG) 32 dBm Output IP3 at 50% Bias RoHS compliant (Directive 2002/95/EC)

Filtronic* FPD6836

Abstract: FPD6836 transistor A114
Contextual Info: FPD6836 Datasheet v3.0 0.25W POWER PHEMT FEATURES: • • • • • • LAYOUT: 25.5 dBm Output Power P1dB 10 dB Power Gain at 12 GHz 16.5 dB Max Stable Gain at 12 GHz 12 dB Maximum Stable Gain at 24 GHz 50% Power-Added Efficiency 8V Operation GENERAL DESCRIPTION:

transistor bc 564

Abstract: bc 5578 0604HQ FPD6836SOT343 OT343 re 0603size bc 548 transistor S22m transistor BC 548 Data transistor Bc 540
Contextual Info: FPD6836SOT343 FPD6836SOT3 43 Low-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive

Filtronic* FPD6836

Contextual Info: FPD6836 0.25W POWER PHEMT Datasheet v2.3 FEATURES: • • • • • • LAYOUT: 25.5 dBm Output Power P1dB 10 dB Power Gain at 12 GHz 16.5 dB Max Stable Gain at 12 GHz 12 dB Maximum Stable Gain at 24 GHz 50% Power-Added Efficiency 8V Operation GENERAL DESCRIPTION:

FPD6836

Abstract: Filtronic* FPD6836 l0241 Modelling Report FPD6836 Filtronic Components MARK 8E diode Modelling TOM2
Contextual Info: FPD6836 TOM3 and TOM2 Models 24/01/2005 Modelling Report FPD6836 TOM3 and TOM2 Models Version 1.0 - Mark Holm Device Design and Modelling Group Filtronic Compound Semiconductor Ltd. Mark Holm 1 Filtronic Confidential FPD6836 TOM3 and TOM2 Models 24/01/2005

FPD6836

Abstract: FPD6836SOT343 FPD750SOT343 MIL-HDBK-263 pHEMT transistor 360 Filtronic* FPD6836
Contextual Info: PRELIMINARY FPD6836SOT343 LOW NOISE, HIGH LINEARITY PACKAGED PHEMT • PERFORMANCE 1850 MHz ♦ 0.5 dB Noise Figure ♦ 20 dBm Output Power (P1dB) ♦ 20 dB Small-Signal Gain (SSG) ♦ 32 dBm Output IP3 ♦ Evaluation Boards Available • DESCRIPTION AND APPLICATIONS

FPD6836

Abstract: s-parameters w345 fpd6836p transistor RF S-parameters Filtronic Compound Semiconductors FPD6836P70
Contextual Info: FPD6836P70 Datasheet v2.1 LOW NOISE HIGH FREQUENCY PACKAGED PHEMT ` FEATURES: • • • • • • PACKAGE: 22 dBm Output Power P1dB 15 dB Power Gain (G1dB) at 5.8 GHz 0.8 dB Noise Figure at 5.8 GHz 32 dBm Output IP3 at 5.8 GHz 45% Power-Added Efficiency at 5.8 GHz

FPD6836SOT343E

Abstract: 0604HQ FPD6836SOT343ESB FPD6836SOT343ESQ 0603 footprint IPC im 1117 atc x7r transistor bc 540
Contextual Info: FPD6836SOT343E FPD6836SOT3 43ELow-Noise High-Linearity Packaged pHEMT LOW-NOISE HIGH-LINEARITY PACKAGED pHEMT NOT FOR NEW DESIGNS Package: SOT343 Features at 1850MHz     Optimum Technology Matching Applied  GaAs HBT RoHS-compliant (Directive

FPD6836P70

Abstract: FPD6836P70SQ FPD6836P70SR mrs 317 36P7 LL1005FHL 0805X7R BC 945 transistor PHEMT marking code B fpd6836p
Contextual Info: FPD6836P70 FPD6836P70 Low-Noise High-Frequency Packaged pHEMT LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimised for low-noise, high-frequency applications.

rogers 4003

Abstract: FPD6836SOT343
Contextual Info: EB6836SOT343BA FPD6836SOT343 1.85GHz LNA EVALUATION BOARD FEATURES • • • • • • 18 dBm Output Power 18 dB Small Signal Gain 0.4 dB Noise Figure 28 dBm OIP3 @ 5dBm Pout Single Tone Bias 3V, 30mA 29.5 dBm OIP3 @ 5dBm Pout (Single Tone) When Biased at 3V, 50mA.

FPD6836

Abstract: FPD6836-000SQ FPD6836-000 pseudomorphic HEMT MIL-HDBK-263 TRANSISTOR 841
Contextual Info: FPD6836 FPD6836 0.25W Power pHEMT 0.25W POWER pHEMT Package Style: Bare Die Product Description Features The FPD6836 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx360μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes

Contextual Info: FPD6836 FPD6836 0.25W Power pHEMT 0.25W POWER pHEMT Package Style: Bare Die Product Description Features The FPD6836 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx360μm Schottky barrier gate, defined by high resolution stepper-based photolithography. The recessed gate structure minimizes

FPD6836P70

Contextual Info: FPD6836P70 FPD6836P70 Low-Noise High-Frequency Packaged pHEMT LOW-NOISE HIGH-FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD6836P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimised for low-noise, high-frequency applications.

FPD6836P70

Abstract: TL11 TL21 TL22
Contextual Info: FPD6836P70 Datasheet v3.0 LOW NOISE HIGH FREQUENCY PACKAGED PHEMT ` FEATURES: • • • • • • PACKAGE: 22 dBm Output Power P1dB 15 dB Power Gain (G1dB) at 5.8 GHz 0.8 dB Noise Figure at 5.8 GHz 32 dBm Output IP3 at 5.8 GHz 45% Power-Added Efficiency at 5.8 GHz

Filtronic

Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500
Contextual Info: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15

VCO-102

Abstract: NBB-502 spf-5189 RF5643wda cxe-2089
Contextual Info: RFMD Product Selection Guide 2011 - 2012 Multiple Markets. Multiple Choices. One RFMD. ® Multiple Markets. Multiple Choices. One RFMD . ® RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high

rf3826

Abstract: SBB-3089 RFHA1000 spf-5189 spf-5189z SUF-9000 SPB-2054S RF2815 SBB-1089 rf3931
Contextual Info: 2009 RFMD Aerospace & Defense Product Selection Guide Robust Components for RF, Microwave, and Millimeter Applications Regarded as the partner of choice in the Aerospace, Defense, and Homeland Security industry, RFMD® has earned a global reputation with its product innovation, quality, scalability, and world-class customer support.

RF5632

Abstract: PNP-1090-P22 UMX-254-D16-G UMX-333-D16-G RF1194 UMX-406-D16 SPF-5043Z UMX-519-D16-G SHF-0289 spf-5122z
Contextual Info: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product

pnp-1500-p22

Abstract: UMZ-1147-R16-G RF5632 UMX-254-D16-G SPA-1002-27H UMX-119-D16-G spf-5189z ums-2000-A16-g spf-5122 UMX-406-D16
Contextual Info: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product