FPD7612 Search Results

pseudomorphic HEMT

Abstract: fpd7612general FPD7612 MIL-HDBK-263 AlGaAs resistivity
Contextual Info: FPD7612 FPD7612General Purpose pHEMT GENERAL PURPOSE pHEMT Package Style: Bare Die Product Description Features The FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25 mx200μm Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed

FPD7612

Abstract: MIL-HDBK-263
Contextual Info: FPD7612 GENERAL PURPOSE PHEMT • DRAIN BOND PAD 2X FEATURES ♦ 19 dBm Linear Output Power at 12 GHz ♦ 12 dB Power Gain at 12 GHz ♦ 17 dB Maximum Stable Gain at 12 GHz ♦ 11 dB Maximum Stable Gain at 18 GHz ♦ 45% Power-Added Efficiency SOURCE BOND

FPD7612P70

Abstract: 0805-X7R HEMT marking P 1005FHL InP HBT transistor low noise pseudomorphic HEMT rogers 4003 InP transistor HEMT DS090629 ATC0805X7R
Contextual Info: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.

Contextual Info: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.

FPD750

Abstract: FPD7612 417E TOM2 FILTRONIC modeling report Modelling
Contextual Info: FPD7612 TOM3 and TOM2 Models 27/01/2005 Modelling Report FPD7612 TOM3 and TOM2 Models Version 1.0 - Device Design and Modelling Group Filtronic Compound Semiconductor Ltd. 1 FPD7612 TOM3 and TOM2 Models 27/01/2005 Introduction This report describes the models for the FPD7612 discrete p-HEMT device. The

FPD7612P70

Abstract: PHEMT marking code a HEMT marking P InP transistor HEMT MIL-HDBK-263 Gan hemt transistor RFMD rfmd model marking code
Contextual Info: FPD7612P70 FPD7612P70 Low Noise High Frequency Packaged pHEMT LOW NOISE HIGH FREQUENCY PACKAGED pHEMT RoHS Compliant Package: P70 Product Description Features The FPD7612P70 is a low parasitic, surface mountable packaged depletion mode pseudomorphic High Electron Mobility Transistor pHEMT optimized for low noise, high frequency applications.

Contextual Info: FPD7612 FPD7612General Purpose pHEMT GENERAL PURPOSE pHEMT Package Style: Bare Die Product Description Features The FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25mx200m Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed

320240a1

Abstract: 0.15 um pHEMT transistor
Contextual Info: FPD7612 GENERAL PURPOSE PHEMT Datasheet v2.2 LAYOUT: FEATURES: • • • • • 20.5 dBm Output Power P1dB 13 dB Power Gain at 12 GHz 17 dB Maximum Stable Gain at 12 GHz 11 dB Maximum Stable Gain at 18 GHz 45% Power-Added Efficiency GENERAL DESCRIPTION:

FPD7612P70

Abstract: FPD7612
Contextual Info: PRELIMINARY • FPD7612P70 HI-FREQUENCY PACKAGED PHEMT PERFORMANCE ♦ 20 dBm Output Power P1dB ♦ 21 dB Power Gain (G1dB) at 1.85 GHz ♦ 0.7 dB Noise Figure at 1.85 GHz ♦ 30 dBm Output IP3 ♦ 50% Power-Added Efficiency at 1.85 GHz ♦ Useable Gain to 24 GHz

Filtronic

Abstract: EUDYNA fpd6836 epa018a FPD750 ph15 transistor FLC087XP FPD3000 FPD7612 FPD1500
Contextual Info: FILTRONIC COMPOUND SEMICONDUCTORS PRODUCT CROSS-REFERENCE GUIDE DISCRETE UNPACKAGED DEVICES Note 1: Filtronic P/N Excelics FPD3000 FPD2250 FPD1500 FPD1050 FPD750 FPD6836 FPD200 FPD7612 EPA240B EPA160B EPA120E EPA120A EPA080A EPA030C EPA018A EPA018A MwT MwT-PH15

0.15 um pHEMT transistor

Abstract: FPD7612
Contextual Info: FPD7612 Datasheet v3.0 GENERAL PURPOSE PHEMT FEATURES: • • • • • LAYOUT: 20.5 dBm Output Power P1dB 13 dB Power Gain at 12 GHz 17 dB Maximum Stable Gain at 12 GHz 11 dB Maximum Stable Gain at 18 GHz 45% Power-Added Efficiency GENERAL DESCRIPTION:

AlGaAs resistivity

Abstract: fpd7612-000s3 FPD7612 RFMD FPD7612 MIL-HDBK-263 InP transistor HEMT TRANSISTOR 841 DS100601
Contextual Info: FPD7612 FPD7612General Purpose pHEMT GENERAL PURPOSE pHEMT Package Style: Bare Die Product Description Features The FPD7612 is an AlGaAs/InGaAs pseudomorphic High Electron Mobility Transistor pHEMT , featuring a 0.25mx200m Schottky barrier gate, defined by high-resolution stepper-based photolithography. The recessed

VCO-102

Abstract: NBB-502 spf-5189 RF5643wda cxe-2089
Contextual Info: RFMD Product Selection Guide 2011 - 2012 Multiple Markets. Multiple Choices. One RFMD. ® Multiple Markets. Multiple Choices. One RFMD . ® RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high

rf3826

Abstract: SBB-3089 RFHA1000 spf-5189 spf-5189z SUF-9000 SPB-2054S RF2815 SBB-1089 rf3931
Contextual Info: 2009 RFMD Aerospace & Defense Product Selection Guide Robust Components for RF, Microwave, and Millimeter Applications Regarded as the partner of choice in the Aerospace, Defense, and Homeland Security industry, RFMD® has earned a global reputation with its product innovation, quality, scalability, and world-class customer support.

pnp-1500-p22

Abstract: UMZ-1147-R16-G RF5632 UMX-254-D16-G SPA-1002-27H UMX-119-D16-G spf-5189z ums-2000-A16-g spf-5122 UMX-406-D16
Contextual Info: 2009 RFMD Multi-Market Product Selection Guide Multiple Markets. Multiple Choices. One RFMD. RFMD® is a global leader addressing the RF industry’s complex challenges by delivering a broad portfolio of high-performance RF components for a diverse range of applications and end markets. Our product