FQD10N20 Search Results

10n20c

Abstract: 10n20
Contextual Info: FQD10N20C / FQU10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

FQU10N20C

Contextual Info: QFET FQD10N20C / FQU10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: QFET TM FQD10N20L / FQU10N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize

Contextual Info: QFET TM FQD10N20L / FQU10N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize

Contextual Info: FQD10N20L / FQU10N20L N-Channel QFET MOSFET 200 V, 7.6 A, 360 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

sem 304

Contextual Info: QFET N-CHANNEL FQD10N20, FQU10N20 FEATURES BV qss = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 14nC Typ.

Contextual Info: QFET N-CHANNEL FQD10N20, FQU10N20 FEATURES BVDSS = 200V • Advanced New Design • Avanced Rugged Technology • Rugged Gate Oxide Technology • Very Low Intrinsic Capacitances • Excellent Switching Characteristics • Unrivalled Gate Charge: 14nC Typ.

FQD10N20C

Abstract: FQU10N20C
Contextual Info: QFET FQD10N20C / FQU10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FQD10N20L / FQU10N20L May 2000 QFET TM FQD10N20L / FQU10N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

Contextual Info: QFET FQD10N20C / FQU10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

FQD10N20L

Abstract: FQU10N20L
Contextual Info: QFET TM FQD10N20L / FQU10N20L 200V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology is especially tailored to minimize

Contextual Info: FQD10N20L N-Channel QFET MOSFET 200 V, 7.6 A, 360 mΩ Description Features This N-Channel enhancement mode power MOSFET is • produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state •

FQD10N20C

Abstract: FQU10N20C
Contextual Info: FQD10N20C / FQU10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Contextual Info: FQD10N20C / FQU10N20C N-Channel QFET MOSFET 200 V, 7.8 A, 360 mΩ Features Description • 7.8 A, 200 V, RDS on = 360 mΩ (Max.) @ VGS = 10 V, ID = 3.9 A This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary

Contextual Info: FQD10N20C / FQU10N20C N-Channel QFET MOSFET 200 V, 7.8 A, 360 mΩ Description Features This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor®’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to

10n20

Abstract: 10n20c FQU10N20C
Contextual Info: FQD10N20C / FQU10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to

Common rail piezo injector driver

Abstract: Common rail injector driver COMMON RAIL SOLENOID DIRECT INJECTION piezo injector driver Piezo Direct Injection SCHEMATIC IGNITION WITH IGBTS FAN7085 DRIVER injector Common rail FQD3P50TM FQD12N201
Contextual Info: AUTOMOTIVE SOLUTIONS TO MAXIMIZE FUEL EFFICIENCY & REDUCE CO2 EMISSIONS Saving our world, 1mW at a time www.fairchildsemi.com INTRODUCTION Fairchild Semiconductor Automotive Solutions Whether specifying an intelligent ignition control for high performance engine management systems or

uc3844 schematic diagram 24v dc dc

Abstract: 24v dc power supply with uc3844 UC3844 flyback application note PowerDsine 3001 schematic uc3844 pcb design on uc3844 ,uc3844 schematic diagram 24v dc dc bzx84c5v1 on semi UC3844 flyback schematic diagram 48V power supply Poe
Contextual Info: POE PD POWER SUPPLY EVALUATION BOARD USER GUIDE Triple Isolated Power Supply for POE Powered Device Application Using UC3844 and LX1752 Evaluation Board Copyright 2008 Rev. 0.0, 2008-12-04 Microsemi Analog Mixed Signal Group 11861 Western Avenue, Garden Grove, CA. 92841, 714-898-8121, Fax: 714-893-2570

SS*2n60b

Abstract: FDD5614P FQD7P20 FDD6512A SFR9224 FQD14N15 IRFR420A MA8630 MOSFET TO-252 FDD6530A
Contextual Info: Discrete MOSFET TO-252 RDS ON Max (Ohms) @ VGS = Products VDS Min. (V) 10V 4.5V 2.5V 1.8V Qg(nC) Typ. @VGS=5V (Note) Config. Maximum Rating ID (A) PD (W) TO-252(DPAK) N-Channel FDD3706 20 Single 0.009 0.011 0.016 - 16 50 44 FDD6512A 20 Single - 0.021 0.031

fqp60n06

Abstract: spb32N03l rfp60n06 SSH6N80 FQP50N10 FSD6680 STP55NF06 AND ITS EQUIVALENT SFP70N03 HGTG*N60A4D irf630 irf640
Contextual Info: MOSFETs Progress in Power Switching Cross Reference STM i c r o e l e c t r o n i c s More Intelligent Solutions FAIRCHILD / SAMSUNG FAIRCHILD / INTERSIL HITACHI ON-SEMI PHILIPS INFINEON SIEMENS TEMIC / VISHAY TOSHIBA IR IXYS ST Nearest Preferred Supplier

8205 mosfet

Abstract: DT 8210 IC Amp. mosfet 1000 watt p 818 opto P-Channel Depletion Mosfets single phase transformer design MIC9130 depletion MOSFET n mosfet depletion 1A sink Si4800DY
Contextual Info: MIC9130 Micrel, Inc. MIC9130 High-Voltage, High-Speed Telecom DC-to-DC Controller General Description Features The MIC9130 is a current-mode PWM controller that efficiently converts –48V telecom voltages to logic levels. The MIC9130 features a high voltage start-up circuit that allows the device to

FDC6331

Abstract: fdp047an FDB045AN FQPF10N20 FQA70N15 FQPF*13N06L fdd5614p fqp50n06 TO252-DPAK FDC6305
Contextual Info: Discrete Temperature range Software version Revision date 2N7002 SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A 2N7002MTF SOT-23-3 Electrical/Thermal 25°C to 125°C N/A N/A BS170 TO-92-3 Electrical 25°C to 125°C Orcad 9.1 Mar 22, 2002 BSS123 SOT-23-3

thermistor KSD201

Abstract: IRF power mosfets catalog Complementary MOSFETs buz11 BZX85C6V8 SPICE MODEL Diode 1N4001 50V 1.0A DO-41 Rectifier Diode K*D1691 make SMPS inverter welding machine transistor KSP44 1N5402 spice model tip122 tip127 mosfet audio amp
Contextual Info: Fairchild Semiconductor Product Catalog 2004 Microcontrollers Optoelectronics Across the board. Around the world. Analog Discrete Interface & Logic Interface & Logic Discrete Power Optoelectronics Analog & Mixed Signal Fairchild Semiconductor, The Power Franchise™

FLMP SuperSOT-6

Abstract: Complementary MOSFETs buz11 FQD7P20 FDG6316 IRF650 FQP65N06 IRFS630 FDG329N FDP2532 fqpf6n80
Contextual Info: 2003 Analog Discrete Interface & Logic Optoelectronics Power MOSFET Selection Guide Across the board. Around the world. Power MOSFET Selection Guide 2003 Table of Contents Product page BGA N-Channel . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1