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    FQD11P06TM Search Results

    FQD11P06TM Datasheets (2)

    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    FQD11P06TM
    		Fairchild Semiconductor 60V P-Channel QFET Original PDF 647.49KB 9
    FQD11P06TM_SB82077
    		Fairchild Semiconductor 60V P-Channel QFET Original PDF 647.49KB 9
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    FQD11P06TM Price and Stock

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    onsemi FQD11P06TM

    MOSFET P-CH 60V 9.4A DPAK
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    DigiKey () FQD11P06TM Cut Tape 21,247 1
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    FQD11P06TM Digi-Reel 21,247 1
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    FQD11P06TM Reel 20,485 2,500
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    Avnet Americas FQD11P06TM Reel 10 Weeks 2,500
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    Mouser Electronics FQD11P06TM 2,301
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    Newark () FQD11P06TM Cut Tape 10,026 5
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    FQD11P06TM Reel 2,500
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    RS FQD11P06TM Bulk 2 Weeks 5
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    Future Electronics () FQD11P06TM Reel 22,500 6 Weeks 2,500
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    Onlinecomponents.com FQD11P06TM
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    TME FQD11P06TM 1,241 1
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    NexGen Digital FQD11P06TM 2
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    Richardson RFPD FQD11P06TM 2,500
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    Chip 1 Exchange FQD11P06TM 3,250
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    Avnet Asia FQD11P06TM 10 Weeks 2,500
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    EBV Elektronik FQD11P06TM 12 Weeks 2,500
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    New Advantage Corporation FQD11P06TM 292 1
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    Fairchild Semiconductor Corporation FQD11P06TM

    P-CHANNEL QFET MOSFET Power Field-Effect Transistor, 9.4A I(D), 60V, 0.185ohm, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, TO-252
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    ComSIT USA FQD11P06TM 42
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    Vyrian FQD11P06TM 12,528
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    Win Source Electronics FQD11P06TM 7,500
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    FQD11P06TM Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    Contextual Info: FQD11P06 P-Channel QFET MOSFET -60 V, -9.4 A, 185 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


    Original     		FQD11P06 PDF

    Contextual Info: QFET TM FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQD11P06 FQU11P06 FQD11P06TF FQD11P06TM O-252 PDF

    IRFR9020tm

    Abstract: IRFR420ATF IRFR224ATM IRFR9220TF IRFR320MTM FQD9N08LTF IRFR9020TF FQD1N80TF KSC5502DTM FQD5P10TM
    Contextual Info: Date Created: 3/9/2004 Date Issued: 3/24/2004 PCN # 20041003 DESIGN/PROCESS CHANGE NOTIFICATION - FINAL This is to inform you that a design and/or process change will be made to the following product s . This notification is for your information and concurrence.


    Original     		78M06CDTXM MC78M12CDTX MC78M15CDTXM MJD122TF MJD210TF MJD29TF MJD30TF MJD31TF MJD32CTM MJD350TF IRFR9020tm IRFR420ATF IRFR224ATM IRFR9220TF IRFR320MTM FQD9N08LTF IRFR9020TF FQD1N80TF KSC5502DTM FQD5P10TM PDF

    11p06

    Abstract: FQU11P06
    Contextual Info: FQD11P06 / FQU11P06 60V P-Channel MOSFET General Description Features These P-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to


    Original     		FQD11P06 FQU11P06 FQD11P06TF FQD11P06TM SB82077 11p06 FQU11P06 PDF

    Contextual Info: FQD11P06 / FQU11P06 P-Channel QFET MOSFET -60 V, -9.4 A, 185 mΩ Description Features This P-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state


    Original     		FQD11P06 FQU11P06 PDF