FR 608 DIODE Search Results

fr 608 diode

Abstract: DIODE REDRESSEMENT 1N SERIES DIODE B-408 diode ku 611 KU 612 diode 736 diode RP 4040 fr 608 KU1506
Contextual Info: rectifier diodes < 100 A diodes de redressement < 100 A Types THOMSON-CSF •o V r MVI I f SM 10 ms vF A (V) (A ) (V) / if max 20 A / T c a s e = 1 5 0 °C 1N 248 B, (R) 1N 249 B,(R) 1N 250 B, (R) 1N 1195 A, (R) 1N 1196 A, (R) 1N 1197 A, (R) 1N 1198 A, (R)

Diodes de redressement

Abstract: BAY21 BAY18 BOITIER MU86 f 1010 fr 608 TF80 650C RG606 fr 1004 diodes
Contextual Info: DIODES DE REDRESSEMENT RAPIDE fast recovery rectifier diodes VRWM 'FSM VF @ •f r m 10 ms •f m A (A) (V) vrmm TYPES 60 A / 'F (A) tease = 75°C •R G 6 0 2 F -R G 6 0 2 *RG 604 F - RG 604 •RG 606 F - RG 606 *RG 608 F - RG 608 *RG 610 F - RG 610 100 A

diode RP 1040

Abstract: DRA 402 DIODE 1N SERIES DIODE DRA402 DRA 402 diode RP 4040 diode 1N 3768 r RP8040R fr 608 diode DIODE REDRESSEMENT 4040
Contextual Info: rectifier diodes < 100 A diodes de redressement < 100 A Types TH O M S O N -C SF •o V r MVI If SM 10 m s vF A (V) (A ) (V ) / if m ax 20 A 1N 1N 1N 1N 1N 1N 1N RN RN RN RN / T c a s e = 1 5 0 °C 248 B, (R) 249 B ,(R ) 250 B, (R) 1195 A , (R) 1196 A, (R)

DIODE REDRESSEMENT 4040

Abstract: RP 8040 X diode RP 4040 la 8040 G 402 rp 402 rp KU 612 RP8040 DRA402 LA 4040
Contextual Info: rectifier diodes < 100 A diodes de redressement Types < 100 A T H O M S O N -C S F •o V r MVI I f SM 10 m s vF A (V) (A ) (V) / if max 20 A / T c a s e = 1 5 0 °C 1N 248 B, (R) 1N 249 B ,(R ) 1N 250 B, (R) 1N 1195 A, (R) 1N 1196 A, (R) 1N 1197 A, (R)

m10z10

Contextual Info: 5-1. Rectifier Diodes •Surface Mount Type Ta=25°C Absolute Maximum Ratings Type No. Vrm Iw fl IFSM (V) (A) (A) Tj : Contutori (Vi max ; i/i A) (A) max 30 Type No. Vrm Hm Im i (V) ÍA) (A) Electrical Characteristics Vf Donation Tstg (V) ft) RM 4 Y 100

Contextual Info: ST 6^27525 N E C ELECTRONICS INC. D E j b 4 E 7 S E S OOOSbD? b 59C 0 5 6 0 7 D I T-41-05 LASER DIODE NDL3001 DAD,VD A PPLICA TIO N AIGaAs DOUBLE H ETER O STR U C TU R E LA SER DIODE D E S C R IP T IO N NDL3001 laser diode is developed for D A D Digital Audio Disk , Video Disk optical head and non impact laser printer. The

BYD74E

Abstract: BYD74A BDY74A BYD74
Contextual Info: N AMER PHILIPS/DISCRETE b*ìE J> m bbSB'iai DDEbbEO b4T • APX _ 1 BYD74 SERIES EPITAXIAL AVALANCHE DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded ID * envelopes. They feature low

Contextual Info: SFH 608 SIEMENS FEATURES • Very High CTR at IF=1 mA, VCE=0.5 V - SFH608-2, 63-125% - S F H 6 0 8 -3 ,100-200% - S F H 6 0 8 -4 ,160-320% - SFH608-5, 250-500% • Specified Minimum CTR at lF=0.5 mA, VCE=1.5 V: > 32% typ. 120% Good CTR Linearity with Forward Current

Contextual Info: G E SOLID STATE □1 DE I 3Ö7SDÖ1 G o n t a t Optoelectronic Specifications. Photon Coupled Isolator H11A1, H11A2, H11A3, H11A4, H11A5 Ga As Infrared Emitting Diode & NPN Silicon Photo-Transistor T h e G E Solid S ta te H l l A i th ru H 11A 5 consist o f a gallium arsenide

2SC4535

Abstract: RCP 400 F
Contextual Info: Power Transistors 2SC4535 2SC4535 Preliminary Silicon NPN Triple-Diffused Planar Darlington Type Package Dim ensions Pow er Switching Unit - mm 5 2max. • Features "Í-3.2 6.9min. h-»1 o -fr • High speed switching T wo O <M +1 Ö Absolute Maximum Ratings (Tc= 25° C)

HIIAA

Abstract: 4 n 608 608 diode optoelectronic ic ge h11a
Contextual Info: G E SOLI » STATE □i »E|3a?5oai Dont^fl Optoelectronic Specification* T-V/-53 A C Input Photon Coupled Isolator H11AA1-H11AA4 Ga As Infrared Emitting Diodes & NPN Silicon Photo-Transistor The GE Solid State H11A A 1 — H 11A A4 consist of two gallium arsenide infrared emitting

Contextual Info: N AMER PHILIPS/DISCRETE bb53^31 DDEbbEO b4^ H A P X b'lE J> _ 1 BYD74 SERIES EPITAXIAL AVALANCHE DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded ID* envelopes. They feature low forward voltage drop, very fast recovery, very low stored charge, non-snap-off switching characteristics

byd74

Abstract: BYD74E BYD74A BDY74A
Contextual Info: SbE » 711002b 0CI40bl7 101 • PHIN BYD74 SERIES PHILIPS INTERNATIONAL SbE ]> v n m n m i v EPITAXIAL AVALANCHE DIODES Glass passivated rectifier diodes in hermetically sealed axial-leaded ID * envelopes. They feature low forward voltage drop, very fast recovery, very low stored charge, non-snap-off switching characteristics

DIODE F10

Abstract: f10f10 TRANSISTOR p50
Contextual Info: SFH608 Infineon APPLICATIONS Telecommunications Industrial Controls Office Machines Microprocessor System Interfaces Dimensions in inches mm pin one ID f3l Í21 Anode Optocouplers FEATURES • Very High CTR at / F=1.0 mA, VCE=0.5 V - SFH608-2,63-125% - SFH608-3,100-200%

AP 4812

Contextual Info: SIEMENS GaAIAs-IR-Lumineszenzdioden 880 nm GaAIAs Infrared Emitters (880 nm) S * ' Anode = SFH 4 8 0 C a th o d e = SFH 4 0 0 SFH 480 SFH 481 SFH 482 (p a cka g e ) 1 4 .5 1 2 .5 ' A p p r o x . w e ig h t 0 . 3 5 g Anode = C a th o d e = 2 .7 0 0 .4 5 - • - C h ip

Contextual Info: LT1030 QUAD LO W -PO W ER LIN E DRIVER 0 3 2 9 7 . A P R IL 1 9 8 9 • Low Supply Voltage . . . ± 5 V to ± 15 V • Supply Current . . . 500 1A Typ • Zero Supply Current When Shut Down • Outputs Can Be Driven ± 30 V LT1030 R E V IS E D J U L Y 1 9 8 9

Contextual Info: ANALOG DEVICES 3 V/5 V, 4/8 Channel High Performance Analog Multiplexers ADG608/ADG609 FUN CTIO N AL B L O C K D IA G RA M S FEA T U R ES +3 V , +5 V , ±5 V Pow er Supplies ADG608 V ss to V DD A nalog Signal Range Low On Resistance 30 i l max Fast Sw itching Tim es

td62308

Contextual Info: TD62308AP/BP/F/AF Unit in mm o LOW SATURATION DRIVER FEATURES . Output Current . . High Sustaining Voltage . . . . . . . . 1.5A 50V Type-AP 80V (Type-BP) 35V (Type-F) 45V (Type-AF) L o w Level Active Inputs TTL and C-MOS Compatible Inputs

Contextual Info: SIEM EN S Mini PROFET BSP 550 MiniPROFET • • • • • • • • • • • • High-side switch Short-circuit protection Input protection Overtemperature protection with hysteresis Overload protection Overvoltage protection Switching inductive load

Contextual Info: S T S 2306 S amHop Microelectronics C orp. S E P , 14 2004 V 1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable.

Contextual Info: SN75468, SN75469 DARLINGTON TRANSISTOR ARRAYS SLRS023B - DECEMBER 1976 - REVISED SEPTEMBER 1995 HIGH-VOLTAGE HIGH-CURRENT DARLINGTON TRANSISTOR ARRAYS D OR N PACKAGE TOP VIEW 500-mA Rated Collector Current (Single Output) High-Voltage Outputs . . . 100 V

Contextual Info: S T S 2306 S amHop Microelectronics C orp. Apr,21 2005 ver1.2 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable.

9906V

Abstract: 660 tg diode s608
Contextual Info: S DS 9906 S amHop Microelectronics C orp. J UL. 30 2004 v1.1 N-C hannel E nhancement Mode Field E ffect Transistor F E AT UR E S P R ODUC T S UMMAR Y V DS S ID R DS ON S uper high dense cell design for low R DS (ON ). ( m Ω ) Max R ugged and reliable. 60 @ V G S = 4V

sw 2608

Abstract: IC tc 2608 C2608 823B
Contextual Info: HIGH-PERFORMANCE CMOS BUS INTERFACE REGISTERS IDT54/74FCT821A/B/C IDT54/74FCT823A/B/C IDT54/74FCT824A/B/C IDT54/74FCT825A/B/C Integrated Device Technology, Inc. FEATURES: DESCRIPTION: • The IDT54/74FCT800 series is built using an advanced dual metal CMOS technology.