FREE IC 4001 Search Results

IN-4001 maximum voltage

Abstract: in 4004 IN4007
Contextual Info: G eneral V S e m ic o n d u c t o r 1N4001 thru 1N ti General Purpose Plastic Rectifier 50 to 1000V 1.0A Reverse Voltage Forward Current Features_ • Plastic package has Underwriters Laboratories Flammability Classification 94V-0 • Construction utilizes void-free molded plastic technique

PK-105081-001

Abstract: 105081-2001 Molex-3 SD-105081-001 105081-0001 miniDP PS-105081-001 06Customer 105-0810-001 12001-0
Contextual Info: 10 NO TES: 1. M A T E R IA L : 1.1. P L A S T IC : N Y L O N PAY6, U L94V-2, CO LO R: B L A C K . H A L O G E N 1.2 IN S E R T FREE. MOLDING: LCR, U L 9 A V - 0 . 1.3. T E R N IN A L : C O P P E R A L L O Y . U . S H IE L D S H E L L : S T A IN L E S S STEEL.

BUK856-4001Z

Contextual Info: Philips Semiconductors Product specification Insulated Gate Bipolar Transistor BUK856-4001Z Protected Logic-Level IGBT_ _ _ _ GENERAL DESCRIPTION QUICK REFERENCE DATA Protected N-channel logic-level insulated gate bipolar power

delay line kappa

Abstract: Kappa Networks kappa Delay Line
Contextual Info: KAPPA NETWORKS INC 01 D E | S0V55UU UUUUdWJ. d SERIES DP24C ANALOG 20-TAP 24-PIN DIP DELAY LINE available in full-MIL conform ance as Series DP24M TABLE I 20051 40051 60051 80051 10151 20151 20012 40012 60012 80012 10112 20112 30112 40112 50112 60112 80112

I2C Specification

Abstract: the I2c-bus specification SCC68070 Bi-directional level shifter for I2C-bus and other systems PHILIPS colour television schematic 14 OM4151 OM5027 philips master replacement guide 80C51 core instructions quick reference OM1022
Contextual Info: THE I2C-BUS SPECIFICATION VERSION 2.1 JANUARY 2000 document order number: 9398 393 40011 Philips Semiconductors The I2C-bus specification 13.4 13.5 CONTENTS 1 PREFACE . . . . . . . . . . . . . . . . . . . . . . . . . . .3 1.1 1.2 1.3 1.4 Version 1.0 - 1992. . . . . . . . . . . . . . . . . . . .

d1191

Abstract: 400-12E4 ic equivalent MID 400 MII400-12E4 ZY180L 0002K MJ50150
Contextual Info: MII 400-12E4 IC25 = 420 A = 1200 V VCES VCE sat typ. = 2.2 V IGBT Module phaseleg and chopper topolgies with optional temperature sensor MII 400-12E4 MID 400-12E4 MID 400-12E4T 3 T1 11 D2 2 10 1 T2 T2 11 3 T1 D1 1 9 MDI 400-12E4 3 D1 8 MID 400-12E4(T) MDI 400-12E4

ZY180L

Abstract: zy180r 600V 300A igbt dc to dc power supply ic equivalent MID 400 thermal simulation of IC package MII400-12E4
Contextual Info: MII 400-12E4 MID 400-12E4 MDI 400-12E4 IGBT Module phaseleg and chopper topolgies 3 T1 3 1 9 D2 11 2 10 1 T2 T2 8 D11 9 1 D12 11 D2 2 10 MII 3 T1 D1 D1 8 IC25 = 420 A = 1200 V VCES VCE sat typ. = 2.2 V 2 MID MDI Features IGBTs T1-T2 • NPT3 IGBT Symbol Conditions

Contextual Info: MCC TM Micro Commercial Components S9015-B S9015-C S9015-D
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.45Watts Tamb=25 OC of Power Dissipation.

S9014C

Contextual Info: MCC TM Micro Commercial Components S9014-B S9014-C S9014-D
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • • • • TO-92 Plastic-Encapsulate Transistors Capable of 0.4Watts Tamb=25 OC of Power Dissipation.

S9015D

Contextual Info: MCC TM Micro Commercial Components S9015-B S9015-C S9015-D
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features TO-92 Plastic-Encapsulate Transistors Capable of 0.45Watts Tamb=25 OC of Power Dissipation.

Contextual Info: MCC TM Micro Commercial Components S9014-B S9014-C S9014-D
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features TO-92 Plastic-Encapsulate Transistors Capable of 0.4Watts Tamb=25 OC of Power Dissipation.

mmbt9014

Abstract: MMBT9014G MMBT9015
Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC MMBT9015 Lead-free: MMBT9014L Halogen-free:MMBT9014G „

MMBT9014

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD MMBT9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE „ FEATURES * High Total Power Dissipation. 450mW * Excellent hFE Linearity. * Complementary to UTC MMBT9015 „ ORDERING INFORMATION Ordering Number Lead Free

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 9014 NPN SILICON TRANSISTOR PRE-AMPLIFIER, LOW LEVEL & LOW NOISE  FEATURES 1 * High total power dissipation. 450mW * Excellent hFE linearity. * Complementary to UTC 9015  ORDERING INFORMATION Ordering Number Package Lead Free

"WORM"

Contextual Info: P H IL IP S 41E IN T E R N A T IO N A L i> m 711002b oosm b? IPHIN T PI W APR 0 3 1990 F - t t - V z . 3hlllps Components Data sheet status Product specification code 9397 253 40011 date of Issue April 1990 CQL71A Medium power collimator pen FEATURES OPERATIONAL HAZARD - SEMICONDUCTOR LASER DIODE

D40D

Abstract: D40D5 D40D10 D40D8 D4001 D40D14 D40D7...8 D40D11 D40D13 D40D2
Contextual Info: Silicon Power Tab Transistors “ COLOR MOLDED” The General Electric D 40D is a brow n, silicone plastic encapsulated, pow er transistor designed for various specific and general purpose applications, such as: output and driver stages o f amplifiers operating at frequencies from DC to greater than 1.0 MHz; series, shunt and

pin DIAGRAM OF IC 7486

Abstract: pin diagram of 7486 IC IC 7486 pin diagram IC 7486N 7486N block diagram for ic 7486 function OF IC 7486 function table IC 7486 7486 ic diagram connection diagram IC 7486
Contextual Info: S E M IC O N D U C T O R tm DM7486 Quad 2-Input Exclusive-OR Gates General Description Features This device contains fo u r independent gates each of w hich perform s the logic exclusive-O R function. • Alternate M ilitary/Aerospace device 5486 is available,

PT331

Abstract: pt331c
Contextual Info: Technical Data Sheet 5mm Phototransistor T-1 3/4 PT331C Features ․Fast response time ․High photo sensitivity ․Pb free Descriptions ․PT331C is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard 5Φ package. Due to is water clear epoxy the device is sensitive

PT334-6C

Contextual Info: Technical Data Sheet 5mm Phototransistor T-1 3/4 PT334-6C-27 Features ․Fast response time ․High photo sensitivity ․Pb free ․The product itself will remain within RoHS compliant version. Descriptions ․PT334-6C-27 is a high speed and high sensitive silicon

PT333-3C

Abstract: PT333 10secs-5mins
Contextual Info: Technical Data Sheet 5mm Phototransistor T-1 PT333-3C Features ․Fast response time ․High photo sensitivity ․Pb free ․This product itself will remain within RoHS compliant version. Descriptions ․PT333-3C is a high speed and high sensitive NPN silicon

Contextual Info: Technical Data Sheet 5mm Phototransistor T-1 3/4 PT334-6C Features ․Fast response time ․High photo sensitivity ․Pb free ․The product itself will remain within RoHS compliant version. Descriptions ․PT334-6C is a high speed and high sensitive silicon

PT331C

Contextual Info: Technical Data Sheet 5mm Phototransistor T-1 3/4 PT331C Features ․Fast response time ․High photo sensitivity ․Pb free ․The product itself will remain within RoHS compliant version. Descriptions ․PT331C is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard 5Φ

PT334-6C

Abstract: pt334
Contextual Info: Technical Data Sheet 5mm Phototransistor T-1 3/4 PT334-6C Features ․Fast response time ․High photo sensitivity ․Pb free ․The product itself will remain within RoHS compliant version. Descriptions ․PT334-6C is a high speed and high sensitive silicon

Contextual Info: Technical Data Sheet 5mm Phototransistor T-1 3/4 PT334-6C Features Fast response time High photo sensitivity Pb free The product itself will remain within RoHS compliant version. Descriptions PT334-6C is a high speed and high sensitive silicon NPN epitaxial planar phototransistor in a standard 5