FREQ100 Search Results

three winding transformer

Contextual Info: DP83849C DP83849C PHYTER DUAL Commercial Temperature Dual Port 10/100 Mb/s Ethernet Physical Layer Transceiver Literature Number: SNOSAX0D DP83849C PHYTER DUAL Commercial Temperature Dual Port 10/100 Mb/s Ethernet Physical Layer Transceiver General Description

DP83849CVS

Abstract: TG110-S050N2RL DP83849C FREQ100 LEN100 syn53 pulse H2019
Contextual Info: DP83849C PHYTER DUAL Commercial Temperature Dual Port 10/100 Mb/s Ethernet Physical Layer Transceiver General Description Features The number of applications requiring Ethernet Connectivity continues to expand. Along with this increased market demand is a change in application

DP83849IFVS

Abstract: DP83849IF TG110-S050N2RL 100BASE-FX FREQ100 LEN100 T2295
Contextual Info: DP83849IF PHYTER DUAL Industrial Temperature with Fiber Support FX and Flexible Port Switching Dual Port 10/100 Mb/s Ethernet Physical Layer Transceiver General Description Features The number of applications requiring Ethernet Connectivity continues to expand. Along with this

Contextual Info: 2N6482 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)80º V(BR)CBO (V)100 I(C) Max. (A)12 Absolute Max. Power Diss. (W)67 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.300

Contextual Info: HEPS3012 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)70 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)7.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)200nØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: MH0812 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)1.2 Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)5.0uØ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N3327 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)65 V(BR)CBO (V)65 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10 h(FE) Max. Current gain.

2N6480

Contextual Info: 2N6480 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)12 Absolute Max. Power Diss. (W)50# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0mx @V(CBO) (V) (Test Condition)100 h(FE) Min. Current gain.20 h(FE) Max. Current gain.300

transistor mpsu45

Abstract: MPS-U45
Contextual Info: MPS-U45 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)40â V(BR)CBO (V) I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.4.0k

Contextual Info: PT2516 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)30 V(BR)CBO (V)40 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC) I(CBO) Max. (A)100m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N5328 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)10 Absolute Max. Power Diss. (W)30 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.300

Contextual Info: 2N2485 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)8.8# Maximum Operating Temp (øC)200þ I(CBO) Max. (A)500u @V(CBO) (V) (Test Condition)120 h(FE) Min. Current gain.10 h(FE) Max. Current gain.

Contextual Info: PT2517 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)55 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC) I(CBO) Max. (A)100m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

2SA968Y

Contextual Info: 2SA968Y Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)160 V(BR)CBO (V)160 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2N3297 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)60â V(BR)CBO (V)60 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)25 Maximum Operating Temp (øC)175# I(CBO) Max. (A)1.0uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.6.0 h(FE) Max. Current gain.60

Contextual Info: 2SD2099 Transistors Pre-Biased "Digital" Transistor No. of Units Per Package V BR CEO (V)30 V(BR)CBO (V)40 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)1.5 I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain. @I(C) (A) (Test Condition)

Hewlett-Packard+application+note+970+BJT

Contextual Info: 970 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)120 I(C) Max. (A).14 Absolute Max. Power Diss. (W) Maximum Operating Temp (øC)140þ I(CBO) Max. (A).10m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)

Contextual Info: 2SC3076 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)2.0 Absolute Max. Power Diss. (W)10 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.70 h(FE) Max. Current gain.240

Contextual Info: PT2045 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)65 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)20 Maximum Operating Temp (øC) I(CBO) Max. (A)100m @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain.

Contextual Info: BSS31 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A) Absolute Max. Power Diss. (W)3.0 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.100 h(FE) Max. Current gain.300

ptpv2

Abstract: Advanced Basestation pcf DP83630
Contextual Info: DP83630 www.ti.com SNLS335B – OCTOBER 2010 – REVISED APRIL 2013 DP83630 Precision PHYTER - IEEE 1588 Precision Time Protocol Transceiver Check for Samples: DP83630 1 Introduction 1.1 Features 123 • IEEE 1588 V1 and V2 Supported • UDP/IPv4, UDP/IPv6, and Layer2 Ethernet

CD100 transistor

Abstract: TG110-S050N2RL DP83849I DP83849IVS FREQ100 LEN100 OPD80
Contextual Info: DP83849I PHYTER DUAL Industrial Temperature with Flexible Port Switching Dual Port 10/100 Mb/s Ethernet Physical Layer Transceiver General Description Features The number of applications requiring Ethernet Connectivity continues to expand. Along with this

Contextual Info: DP83630 www.ti.com SNLS335A – JANUARY 2011 – REVISED FEBRUARY 2011 DP83630 Precision PHYTER - IEEE 1588 Precision Time Protocol Transceiver Check for Samples: DP83630 FEATURES 1 • • 2 • • • • • • • • • • • • • • • IEEE 1588 V1 and V2 supported

Mlt-3

Abstract: DP83849 DP83849C DP83849I DP83849ID DP83849IF FREQ100 an-1508 national
Contextual Info: National Semiconductor Application Note 1508 Dave Rosselot August 2006 1.0 Introduction polarity is corrected by the receiver, this does not necessarily indicate a functional problem in the cable. The Polarity indication is available in bit 12 of the PHYSTS register or bit 4