FREQ200M Search Results
FREQ200M Datasheets Context Search
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Contextual Info: 2N3942 Transistors NPN Monolithic Transistor Pair Number of Devices2 Type NPN/PNP NPN V(BR)CEO (V)45 V(BR)CBO (V)60 I(C) Max. (A)50m P(D) Max. (W)1.5 Minimum Operating Temp (øC)-65 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)250p @V(CBO) (V) (Test Condition)45 |
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2N3942 Freq200M StyleTO-78 | |
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Contextual Info: BR200B Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)50 V(BR)CBO (V)60 I(C) Max. (A)20 Absolute Max. Power Diss. (W)50 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)100uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.50 h(FE) Max. Current gain. |
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BR200B Freq200M StyleTO-210AC Code3-12 | |
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Contextual Info: 2N6988 Transistors PNP Multichip Composite Transistor Pair Military/High-RelN Number of Devices4 Type NPN/PNP V(BR)CEO (V)60 V(BR)CBO (V) I(C) Max. (A)600m P(D) Max. (W)1.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC)200õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) |
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2N6988 Freq200M | |
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Contextual Info: 2N4405+JAN Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)80 V(BR)CBO (V)80 I(C) Max. (A)500m Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC)200þ I(CBO) Max. (A)25n @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)500m |
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2N4405 Freq200M time25n | |
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Contextual Info: 2SA1125 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)50m Absolute Max. Power Diss. (W)1.5 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)1 @I(C) (A) (Test Condition)30m |
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2SA1125 Freq200MÃ q200MÃ | |
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Contextual Info: FF2907J Transistors Independent Transistor Array Military/High-RelN Number of Devices4 Type NPN/PNP V(BR)CEO (V) V(BR)CBO (V) I(C) Max. (A) P(D) Max. (W)2.5 Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) |
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FF2907J Freq200M | |
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Contextual Info: 2N3486 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W)2.0 Maximum Operating Temp (øC)175þ I(CBO) Max. (A)20n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition) |
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2N3486 Freq200M time40n | |
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Contextual Info: B3458 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)7.5 Maximum Operating Temp (øC) I(CBO) Max. (A).02mØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.30 h(FE) Max. Current gain. |
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B3458 Freq200M | |
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Contextual Info: 2906 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)0.8 Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)20n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain. |
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Freq200M | |
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Contextual Info: 2SA1125T Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)50m Absolute Max. Power Diss. (W)1.5# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)1 @I(C) (A) (Test Condition)30m |
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2SA1125T Freq200MÃ | |
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Contextual Info: PC107 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)50 I(C) Max. (A)100m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)200nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.600 h(FE) Max. Current gain. |
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PC107 Freq200M | |
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Contextual Info: 2SA1125S Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)50m Absolute Max. Power Diss. (W)1.5# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)1u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)1 @I(C) (A) (Test Condition)30m |
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2SA1125S Freq200MÃ | |
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Contextual Info: B3466 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)100 I(C) Max. (A)3.0 Absolute Max. Power Diss. (W)5.0 Maximum Operating Temp (øC)75õ I(CBO) Max. (A)100nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain. |
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B3466 Freq200M StyleStF-10 | |
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Contextual Info: 2SC2395 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)18 V(BR)CBO (V)40 I(C) Max. (A)5.0 Absolute Max. Power Diss. (W)40 Maximum Operating Temp (øC)175õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.20 h(FE) Max. Current gain. |
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2SC2395 Freq200M StyleSOT-123var Code4-28 | |
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Contextual Info: NA22ZX Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)25 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)750m Maximum Operating Temp (øC)140õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain. |
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NA22ZX Freq200M | |
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Contextual Info: MMST2907 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W) Maximum Operating Temp (øC) I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.100 h(FE) Max. Current gain.300 |
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MMST2907 Freq200M | |
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Contextual Info: ECG46 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)500m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10k h(FE) Max. Current gain. |
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ECG46 Freq200M | |
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Contextual Info: MMST2907A Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)60 V(BR)CBO (V)60 I(C) Max. (A)600m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)60.0 h(FE) Min. Current gain.100 h(FE) Max. Current gain.300 |
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MMST2907A Freq200M | |
mps3693Contextual Info: MPS3693 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)45 I(C) Max. (A)100m Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50nØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.40 h(FE) Max. Current gain. |
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MPS3693 Freq200M | |
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Contextual Info: TMPT2107G4 Transistors Si NPN LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)60 I(C) Max. (A) Absolute Max. Power Diss. (W)350m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)50n @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.170 h(FE) Max. Current gain. |
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TMPT2107G4 Freq200M | |
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Contextual Info: ZTX3905 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)200m Absolute Max. Power Diss. (W)500m Maximum Operating Temp (øC)175õ I(CBO) Max. (A)50n÷ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain. |
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ZTX3905 Freq200M | |
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Contextual Info: MD2219 Transistors NPN Multi-Chip Composite Transistor Pair Military/High-RelN Number of Devices2 Type NPN/PNP V(BR)CEO (V)30 V(BR)CBO (V) I(C) Max. (A)500m P(D) Max. (W)625m Minimum Operating Temp (øC) Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) |
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MD2219 Freq200M StyleTO-99 | |
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Contextual Info: PET0404-2 Transistors Si PNP LP HF BJT Military/High-RelN V BR CEO (V)30â V(BR)CBO (V)40 I(C) Max. (A)500m Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain. |
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PET0404-2 Freq200M | |
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Contextual Info: DTD143TF Transistors Pre-Biased "Digital" Transistor No. of Units Per Package1 V BR CEO (V)50 V(BR)CBO (V)50 I(C) Max. (A)500m Absolute Max. Power Diss. (W)300m I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition)50 h(FE) Min. Current gain.100 h(FE) Max. Current gain.600 |
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DTD143TF Freq200M | |