ECG46 Search Results

Contextual Info: ECG465 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)25 I(D) Max. (A)3.0m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC)

Contextual Info: ECG46 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)100 V(BR)CBO (V) I(C) Max. (A)500m Absolute Max. Power Diss. (W)625m Maximum Operating Temp (øC) I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.10k h(FE) Max. Current gain.

Contextual Info: ECG469 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)35 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A) V(GS)off Max. (V)

ECG466

Abstract: ECG468 ECG490 ecg mosfet ECG491 ECG464 ECG465 ECG492 ecg jfet
Contextual Info: Field E ffe ct Tran sisto rs cont'd (Observe ECG Typo ECG464 ▲ Transcon­ ductance gfs fimhos Description and Application Gate to Source Cutoff Voltage VGS (off) Max V M P S F E I, Zero-Gate Drain Current • dss 10 nA ¡¡Max f Drain Current fD Input

Contextual Info: ECG466 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)40 I(D) Max. (A)250p I(G) Max. (A) Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A) V(GS)off Max. (V)10

jrc386d

Abstract: SN76131N LM1011N ne545b HA1457W X0238CE upc1018c UA78GKC MJ13005 MN8303
Contextual Info: ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44 ECG45 ECG46 ECG47 ECG48 ECG49 ECG50

Contextual Info: ECG467 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)30 I(D) Max. (A)1.0n I(G) Max. (A) Absolute Max. Power Diss. (W)310m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A) V(GS)off Max. (V)

Contextual Info: ECG460 Transistors P-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)20 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)300m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A) V(GS)off Max. (V)6.0

Contextual Info: ECG461 Transistors Dual N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)50 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A) V(GS)off Max. (V)4.5

Contextual Info: ECG468 Transistors N-Channel JFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)35 I(D) Max. (A) I(G) Max. (A) Absolute Max. Power Diss. (W)360m Maximum Operating Temp (øC) I(GSS) Max. (A) @V(GS) (V) (Test Condition) V(GS)off Min. (V) I(DSS) Max. (A) V(GS)off Max. (V)

ECG465

Abstract: ECG491 ECG466 uei 310 ECG490 ecg mosfet ECG464 ECG492 mosfet 830 transconductance mosfet
Contextual Info: Field Effect Transistors cont'd (Observe ECG Type Transcon­ ductance gfs pmhos Description and Application Gate to Source Cutoff Voltage V GS (off) Max V Zero-Gate Drain Current Drain Current •d s s •d 10 nA |Max ECG464 ▲ m Gate to Drain to Source

Contextual Info: ECG462 Transistors N-Channel Depletion MOSFET V BR DSS (V) V(BR)GSS (V)20 I(D) Max. (A) I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC) Maximum Operating Temp (øC) Thermal Resistance Junc-Case

Contextual Info: ECG464 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)25 I(D) Max. (A)3.0m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)300m Minimum Operating Temp (øC)

Contextual Info: ECG463 Transistors P-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V) V(BR)GSS (V)30 I(D) Max. (A)10m I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)500m Minimum Operating Temp (øC)

50 Amp 100 volt fet

Abstract: ECG392 ECG385 ECG378 ECG386 ECG379 ECG395 ECG380 ECG380MP ECG396
Contextual Info: PHILIPS E C G INC 17E D Transistors contadi ECG376 NPN-Si, Pwr Amp bbSSÌEfl D0G263b 3 • 13> (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volt» f v CBO Description and Application ' ECQ Type ■ 300 ■ Collector To Emitter

transistor ECG 152

Abstract: Bt 2313 transistor outlines transistor ecg36 TRANSISTOR ecg 379 ECG157 123AP transistor ECG 332 Philips ECG 152 ECG 3041
Contextual Info: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) MECG bbS3TSfl DDD714b (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo Description and Application

TCA780

Abstract: TFK U 111 B TFK U 4614 B TFK S 186 P TFK U 217 B TFK BP w 41 n TFK BPW 41 N Tfk 880 TFK 148 TDSR 5150 G
Contextual Info: Industry Part Number 1N3245 1N3611GP 1N3612GP 1N3613GP 1N3614GP 1N3725 1N3957GP 1N4001GP 1N4002GP 1N4003GP 1N4004GP 1N4005GP 1N4006GP 1N4007GP 1N4245GP 1N4246GP 1N4247GP 1N4248GP 1N4249GP 1N4678.1N4717 1N4728A.1N4761A 1N4933GP 1N4934GP 1N4935GP 1N4936GP

ECG451

Abstract: ECG383 ECG386 ecg385 ECG382 ECG377 ECG378 ECG379 ECG381 ECG384
Contextual Info: Transistors cont'd Description and Application ECG Type ECG378 PNP-Si, Pwr Driver, PO, Sw, Reg (Compì to ECG377) ECG379 ECG381 ECG382 (Maximum Ratings at T c = 25°C Unless Otherwise Noted) Collector To Base Volts Collector To Emitter Volts b v Cb o BV c e O

LM1011N

Abstract: JRC386D X0238CE UA78GKC M51725L MJ13005 AN6677 HA11749 MN8303 sn76131n
Contextual Info: TCG/NTE/ECG To JEDEC and Japanese ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 ECG38 ECG39 ECG40 ECG41 ECG42 ECG43 ECG44

ECG222

Abstract: ECG458 300 Amp mosfet ecg459 transistor jfet ecg 200 Amp mosfet dual jfet vhf ECG312 ECG451 ECG221
Contextual Info: Field E ffect Transistors M axim um Ratings at T a = 25°C Observe M O S Handling ▲ Gate to Source Cutoff Voltage V GS (off) M ax V Zero-Gate Gate To Voltage Source Drain Breakdown Current Voltage IpSS mA b v GSS Min - Max Min V 8 5 -2 5 20 15,000 18 typ

ECG380

Abstract: ECG379 ECG392 ECG390 ECG377 ECG378 ecg451 ECG385 ECG383 ECG381
Contextual Info: PHILIPS E C G INC 17E D Transistors cOntrd! (Maximum ECQ Type ECG376 Collector To Base Volt» | v CBO Description and Application NPN-Si, Pwr Amp 300 ^53=120 D0G2a3b 3 • ' T LT*>-I3> ■ Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Emitter

jrc386d

Abstract: LM3171 LM1011N MJ13005 UA78GKC upc1018c x0137ce PLL02A MN8303 HA1457w
Contextual Info: ECG To JEDEC and Japanese part numbers ECG/TCG/NTE ECG10 ECG11 ECG12 ECG13 ECG14 ECG15 ECG16 ECG17 ECG18 ECG19 ECG20 ECG21 ECG22 ECG23 ECG24 ECG25 ECG26 ECG27 ECG28 ECG29 ECG30 ECG31 ECG32 ECG33 ECG34 ECG35 ECG36 ECG37 2SA1265N ECG38 ECG39 ECG40 ECG41 ECG42

300 Amp mosfet

Abstract: 200 Amp mosfet ECG222 ECG459 ECG451 ECG458 ECG221 ECG457 ECG312 dual jfet vhf
Contextual Info: Field Effect Transistors ECG Type Description and Application Maximum Ratings at T a = 25°C Observe MOS Handling ▲ Gate to Source Trans­ Cutoff conductance Voltage gfs VGS <°«> Typ fjmho8 Max V Zero-Gate Gate To Voltage Source Drain Breakdown Input

transistor ecg36

Abstract: transistor ECG 152 TRANSISTOR ecg 379 transistor. ECG 123AP transistor ECG 332 ecg 126 transistor TRANSISTOR ECG 69 TRANSISTOR Outlines ecg 123 transistor transistor pnp ecg 180
Contextual Info: PHILIP S E C 6 INC S4E D Transistors cont d ECG Type Description and Application ECG36 NPN-Si, Pwr Amp, Hi Speed ECG36MP* Switch (Compì to ECG37) • bbS3TSfl DDD714b MECG (Maximum Ratings at Tc = 25°C Unless Otherwise Noted) Collector To Base Volts b v Cbo