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Text: SDM4005 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)15 Absolute Max. Power Diss. (W)117 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.750 h(FE) Max. Current gain.
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Text: 1561-1015 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)30 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2N6101 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)80 I(C) Max. (A)10 Absolute Max. Power Diss. (W)75# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)2.0m° @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)2.5 @I(C) (A) (Test Condition)10
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Text: 1571-1425 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)140 V(BR)CBO (V)140 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)29 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 1571-1220 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)29 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2N1234 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)110 V(BR)CBO (V)110 I(C) Max. (A) Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)160õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)90 V(CE)sat Max. (V).20 @I(C) (A) (Test Condition)10m
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Text: 2N6253 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)45 V(BR)CBO (V)55 I(C) Max. (A)15 Absolute Max. Power Diss. (W)115# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.5m° @V(CBO) (V) (Test Condition)25 V(CE)sat Max. (V)4.0 @I(C) (A) (Test Condition)15
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Text: RCA3054 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)55ö V(BR)CBO (V)90 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)36 Maximum Operating Temp (øC)140õ I(CBO) Max. (A)500u° @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 1561-1615 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)160 V(BR)CBO (V)160 I(C) Max. (A)30 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175# I(CBO) Max. (A)2.0÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 1561-1410 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)140 V(BR)CBO (V)140 I(C) Max. (A)30 Absolute Max. Power Diss. (W)150 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 1571-1025 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)29 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 1571-1620 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)160 V(BR)CBO (V)160 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)29 Maximum Operating Temp (øC)175# I(CBO) Max. (A)1.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 1561-1004 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)100 I(C) Max. (A)15 Absolute Max. Power Diss. (W)120 Maximum Operating Temp (øC)175# I(CBO) Max. (A)2.0m÷ @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: SDM4002 Transistors NPN Darlington Transistor Military/High-RelN V BR CEO (V)60 V(BR)CBO (V) I(C) Max. (A)15 Absolute Max. Power Diss. (W)117 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)2.0m @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.1.0k h(FE) Max. Current gain.
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Text: 2N6102 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)45 I(C) Max. (A)16 Absolute Max. Power Diss. (W)75# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)2.0m° @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)2.5 @I(C) (A) (Test Condition)16
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Text: HA7542 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)110 I(C) Max. (A) Absolute Max. Power Diss. (W)400m Maximum Operating Temp (øC)150õ I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2N524 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)30ã V(BR)CBO (V)45 I(C) Max. (A)500m Absolute Max. Power Diss. (W)225m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.25 h(FE) Max. Current gain.42
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Text: 2N133A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)20 V(BR)CBO (V)35 I(C) Max. (A)100m Absolute Max. Power Diss. (W)102m Maximum Operating Temp (øC)85õ I(CBO) Max. (A)15uØ @V(CBO) (V) (Test Condition)20 h(FE) Min. Current gain. h(FE) Max. Current gain.
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Text: CTP1330 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)40m Absolute Max. Power Diss. (W)50m Maximum Operating Temp (øC)75 I(CBO) Max. (A)4.0uØ @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.
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Text: 3607 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)40 I(C) Max. (A)5.0m Absolute Max. Power Diss. (W)50m Maximum Operating Temp (øC)60’ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.
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Text: PP3647 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)100 I(C) Max. (A)20 Absolute Max. Power Diss. (W)200 Maximum Operating Temp (øC)175õ I(CBO) Max. (A)10m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: KSD2202 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)10 Absolute Max. Power Diss. (W)115 Maximum Operating Temp (øC) I(CBO) Max. (A)1.0m @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)
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Text: 2N6103 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)45 I(C) Max. (A)16 Absolute Max. Power Diss. (W)75# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)2.0m° @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)2.5 @I(C) (A) (Test Condition)16
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Text: 2N6100 Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)70 V(BR)CBO (V)80 I(C) Max. (A)10 Absolute Max. Power Diss. (W)75# Maximum Operating Temp (øC)150õ I(CBO) Max. (A)2.0m° @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)2.5 @I(C) (A) (Test Condition)10
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