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IR 30 D1

Contextual Info: SN74ALS236 64 x 4 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY SDAS107A-OCTOBER 1986 - REVISED SEPTEMBER 1993 Asynchronous Operation Organized as 64 Words by 4 Bits DW OR N PACKAGE TOP VIEW r NC [ 1 Data Rates From 0 to 30 MHz 3-State Outputs 16 J VCC 15 ] S O

transistor 2SK1603

Abstract: 2SK1603 2SK1723 2SK1118 transistor 2sk1723 MOSFET 2SK1358 Transistor Guide 2sk16 packages TYPES FOR MOSFET toshiba transistor smd code 2sk1358
Contextual Info: H it'll Voltage M SFKTs MOSFET Features Toshiba power MOSFET lineup ranges from 60V to 1000V and from 0.5A to 60A. All devices are enhancement types, which means the transistor is normally off. Our wide variety of different packages offers choices for all

Contextual Info: TC55417P/J —15H. TC55417P/J-20H TC55417P/J—25H. TC55417P/J-35H • * 16,384 W O R D x 4 BIT CMOS STATIC RAM DESCRIPTION The TC55417P/J—H is a 65,536 bit high speed static random access memory organized as 16,384 words by 4 bits using CMOS technology, and operated from a single 5 - volt supply.

Contextual Info: UCC3911 y UNITRODE PRELIMINARY Lithium-Ion Battery Protector FEATURES BLOCK DIAGRAM • Protects Sensitive Lithium-Ion Cells from Overcharging and Over-Discharging • Used for Two-Cell Lithium-Ion Battery Packs • No External FETs Required • Provides Protection Against

12v 1200mah battery NiMH

Abstract: 12v 1200mah nimh battery db opera 415 12v 1200mah nimh 12v 1200mah battery
Contextual Info: y UCC2956 UCC3956 mmm UNITRODE Switch Mode Lithium-Ion Battery Charger Controller FEATURES Precision 4.1V Reference 1% High Efficiency Battery Charger Solution Average Current Mode Control from Trickle to Over Charge Resistor Programmable Charge Currents

Contextual Info: SN74ALS233B 16x5 ASYNCHRONOUS FIRST-IN, FIRST-OUT MEMORY SCAS253 - MARCH 1990 - REVISED JUNE 1992 • Independent Asychronous Inputs and Outputs DW OR N PACKAGE TOP VIEW • 16 Words by 5 Bits OE [ 1 FULL-1 [ 2 • Data Rates From 0 to 40 MHz • Fall-Through Ti me. . . 14 ns Typ

74ALS234

Contextual Info: SN54ALS234, SN74ALS234 64 x 4 ASYNCHRONOUS FIRST-IN FIRST OUT MEMORY 0 2 9 5 8 , OCTOBER 1 9 8 6 Asynchronous Operation S N 54A LS 234 . . . J PACKAGE S N 74A LS 234 . . . 0 OR N PACKAGE Organized as 6 4 Words of 4 Bits Management Products TOP VIEW! Data Rates from 0 to 30 MHz

MG50G2CL3

Abstract: Mg50G2cl mg50g2
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50G2CL3 HIGH POWER SWITCHING APPLICATIONS. Unit in ram MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector Is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-In to 1 Package. . High DC Current Gain: hFE=100 Min. (Ic=50A)

54HC154

Contextual Info: SN54HC154, SN74HC154 LINE TO 16 LINE DECODERS/DEMULTIPLEXERS D 2 6 8 4 , DECEMBER 1 9 8 2 -R E V IS E D SEPTEMBER 1987 • Decodes 4 Binary-Coded Inputs into One of 16 Mutually Exclusive Outputs • Performs the Demultiplexing Function by Distributing Data From One Input to Any

MG15G1AL3

Abstract: MG15G1AL3 equivalent mg15g1 mg15g MG15G1AL
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG15G1AL3 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-In Free Wheeling Diode. . High DC Current Gain : hFE=100 Min. (Ic=15A)

Contextual Info: SN54HC132, SN74HC132 QUADRUPLE POSITIVE-NAND GATES WITH SCHMITT-TRIGGER INPUTS SCLS034B - DECEMBER 1982 - REVISED JANUARY 1996 • • • • • Operation From Very Slow Input Transitions Temperature-Compensated Threshold Levels High Noise Immunity Same Pinouts as ’HCOO

MG400H1FK1

Abstract: LF400A
Contextual Info: MG400H1FK1 G TR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diode . High DC Current Gain : h]?E=200 Min. . Low Saturation Voltage

Field-Programmable Gate Arrays

Contextual Info: TPC14 SERIES CMOS FIELD-PROGRAMMABLE GATE ARRAYS ^ JA N U A RY 1993 • • • • • • Gate Capacities from < 1,000 to > 10,000 Gate Array Gates Gate Capacities from < 2,500 to > 25,000

Contextual Info: S N 5 4 A LS 2 2 9 A , S N 7 4 A LS 2 2 9 A 1 6 x 5 ASYNCHRONOUS FIRST-IN FIRST-OUT MEMORIES D 2 8 7 6 . M A R C H 1 9 8 6 -R E V IS E D M A Y 1 9 8 6 • Independent Asychronous Inputs and Outputs • 16 Words by 5 Bits Each • Data Rates from 0 to 30 MHz

MG30G2YM1

Abstract: LD30A
Contextual Info: GTR MODULE SILICON N CHANNEL MOS TYPE MG30G2YM1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. Unit in mm . The Drain is Isolated from Case. . 2 MOS FETs are Built-in to 1 Package . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance

MG75M2CK1

Abstract: tkp7
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG75M2CK1 HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built Into 1 Package. . High DC Current Gain

ta7798

Abstract: TA7798P 1S152 TA7728P
Contextual Info: TOSHIBA TA7798P TENTATIVE N T S C -P A L E N C O D E R F O R T E L E T E X T , V ID E O T E X , A N D M IC R O C O M P U T E R S TA7798P is an IC designed to compose composite video signals of either NTSC or PAL type from analog RGB input signals as well as from inputs

Contextual Info: TOSHIBA MG90V2YS40 TOSHIBA GTR MODULE SILICON N CHANNEL IGBT MG90V2YS40 HIGH PO W ER SWITCHING APPLICATIONS Unit in mm MOTOR CONTROL APPLICATIONS 4-FAST-ON-TAB #110 • The Electrodes are Isolated from Case. • High Input Impedance • Includes a Complete Half Bridge in One

Contextual Info: MG300J1US51 H IG H P O W E R S W IT C H IN G A P P L IC A T IO N S. M O T O R C O N T R O L A P P L IC A T IO N S. • • • • • • The Electrodes are Isolated from Case. High Input Impedance Includes a Complete Half Bridge in One Package. Enhancement-Mode

MG150H2CL1

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG150H2CL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FAST—ON—TAB #110 MS w.s±a5 FEATURES: . The Collector is Isolated from Case. . With Built-in Free Wheeling Diodes. . High DC Current Gain : hpjr=80 Min. (Ic=150A)

Contextual Info: AM26LS31C QUADRUPLE DIFFERENTIAL LINE DRIVER _D 2433. JA N U A R Y 19 7 9 -R E V IS E D M AY 1990 Meets EIA Standard RS-422-A D, J, OR N PAC KAG E TOP V IE W Operates From a Single 5-V Supply 1Y [ 2 16 ] V C C 15 ] 4 A 1Z[ ENABLE G [

Contextual Info: T O SH IB A TA6009FN TO SH IBA BIPO LAR LINEAR INTEGRATED CIRCUIT SILICON M ONOLITHIC TA6009FN SHOCK SENSOR IC Ich VERSION TA6009FN detects an existence o f external shock through t h p <;hnrk i p n i n r a n d n i i t n u t FEATURES • TA6009FN operates from 2.7 ~5.5 V DC single power

ic 109b

Abstract: MG100M2YK1 Di 762 transistor transistor B 764
Contextual Info: MG100M2YK1 GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE Unit in mm HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. 6-FAST-ON-TAB t 110 JAPAN 3-M5 FEATURES: 4 -065±C13 . The Collector is Isolated from Case. to . 2 Power Transistors and 2 Free Wheeling

d2439

Abstract: p725
Contextual Info: MC3423 OVERVOLTAGE-SENSING CIRCUIT D2439, A P R IL 1978— RE V IS E D M A R C H 1988 * D OR P PACKAGE Separate Outputs for Crowbar and Logic Circuitry TOP VIEW Programmable Time Delay to Eliminate Noise Triggering TTL-Level Activation Isolated From Voltage-Sensing Inputs