MG50G2 Search Results

MG50G2CL3

Abstract: Mg50G2cl mg50g2
Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50G2CL3 HIGH POWER SWITCHING APPLICATIONS. Unit in ram MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector Is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-In to 1 Package. . High DC Current Gain: hFE=100 Min. (Ic=50A)

Contextual Info: GTR MODULE SILICON N CHANNEL MOS TYPE MG50G2DM1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Drain is Isolated from Case. . 2 MOS FETs are Built-in to 1 Package. . With Built-in Free Wheeling Diode. . Low Drain-Source ON Resistance

MG50G2YL1A

Abstract: A 222G
Contextual Info: MG50G2YL1A GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES : . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain: hFE=100 Min. (IC=50A)

Contextual Info: MG50G2YM1 GTR MODULE SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. FEATURES: . The Drain i Isolated from Case. 2 MOS FETs are Built-in to 1 Package. With Built-in Free Wheeling Diode. Low Drain-Source ON Resistance

Contextual Info: GTR MODULE SILICON N CHANNEL MOS TYPE MG50G2YM1 HIGH POWER S W I T C H I N G A P P L IC A TI ON S. M O T O R C O N T R O L APPL IC A TI ON S. FEATURES : . The Drain is Isolated from Case. . 2 MOS FETs are Built-in to 1 Package. . Kith Built-in Free Wheeling Diode.

957a

Abstract: MG50G2CL3 2SD1960 MG50G2cl3 toshiba 2SC4328 2sd1111 2SC1841 2SD1577 2SD764 2SD947
Contextual Info: - Sí € a * « Manuf. T y p e No. SANYO S TOSHIBA ZSÜ 336 Ä 2SD 937 3È S MG50G2CL3 2SD 938 3È ~2. MG5 0 G 2 C L 3 2SD 939 3£ $ MG50G2CL3 2SD 940 3K S 2SD 941 2SD 942 S: 3E S: 2 2SD 943 £ $ 2SD 946 fö T 2SD894 2 SO 946B te T 2SD1953 □— A 2SD 949

Contextual Info: MG50G2YL1A— SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS. FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package. . High DC Current Gain:

MG50G2DL1

Contextual Info: GTR MODULE SILICON NPN TRIPLE DIFFUSED TYPE MG50G2DL1 HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS. g-0&3±O.3 FEATURES: . The Collector is Isolated from Case. . 2 Power Transistors and 2 Free Wheeling Diodes are Built-in to 1 Package.

mg50g2

Abstract: 16441 MG50G2CH1 lt 7550
Contextual Info: •Ì0 DE TOSHIBA -CDISCRETE/OPTOJ 9097250 TOSHIBA DISCRETE/OPTO ¿/oáhiha SEMICONDUCTOR 90D 0Dlt,4Ml a I 16441 D TOSHIBA GTR MODULE MG50G2CH1 TECHNICAL DATA SILICON N-CHANNEL MOS+NPN TRANSISTOR HIGH POWER SWITCHING APPLICATIONS. Unit in mm MOTOR CONTROL APPLICATIONS.

2sk1029

Abstract: MP6702 2sk1513 2SK56 MG30G2YM1 MG15G1AM1 MG15C4HM1 MG50D2DM1
Contextual Info: MOS-FET Connection Clrcua Symbol <D <z AM ZM YM DM Maximum Rating VODS V 8 15 10 150 2SK578* 260 2SK447"* 460 2SK568* 500 2SK1513" 25 250 MG30D1ZM1 250 MG30D2YM1 MG50D2YM1 460 MG30G2YM1 MG50G2YM1 500 MG30H2YM1 MG50H2YM1 260 MG30D2DM1 MG50D2DM1 4S0 MG30G2DM1

Contextual Info: MG50G2DM1 Transistors Independent MOSFET Power Module Circuits Per Package2 V BR DSS (V)450 V(BR)GSS (V)20 I(D) Max. (A)50 Absolute Max. Power Diss. (W)400 Maximum Operating Temp (øC)150 Thermal Resistance Junc-Case I(DSS) Min. (A) I(GSS) Max. (A)150n @V(GS) (V) (Test Condition)20

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2SK 150A

Abstract: mg100g1al2 2SD1365 2SC2461 B 2sk30 2SC102 C366G b1375 MG15G1AL2 1265N
Contextual Info: ♦D ISC O N TIN U E D TYPE LIST T y p e No. 2N3713 R ecom m end R e p la c e m e n t T y p e N o. - 2N3714 T y p e N o. R ecom m end R e p la c e m e n t T y p e N o. T y p e No. R ecom m end R e p la c e m e n t T y p e N o. 2SA52 2SA1015 2SA282 2SA1015

TF1204

Abstract: MG50G2cl3 toshiba MG50G2CL3
Contextual Info: SOLID STATE GTR DRIVER MODULE TF1204 GTR DRIVER TOSHIBA TF1204 is the GTR driver designed for use with TOSHIBA Giant Transistor Module and it includes the optical isolator and GTR driver cirucit. Using this driver, you can design high reliability and compact system.

MG30G2CL3

Abstract: MG25N2CK1 MG75H2YL1A MG50G2CL3 MG75G2YL1A MG75H2CL1 MG15N2CK1 MG25M2YK1 MG25N2YK1 KG29
Contextual Info: -219% £ CK-3 Cl O B1 Bl El/C 2 E1/C2 62 & 3 . ;U -K Ta=25t m s Ts'i (V) (us) IB VcE V BE t St 9 t rr V f I B1 t on I B2 tf I f C//s) IF (A) fi * (A) V BE di/dt ccm ^ fifi mm Wi-F SP m g b m ^ £ fi Á (H) IS * 3.5 15 0.3 2 h 6 0.3 -0.9 600 40 1.5 15 1.0

70H40

Abstract: transistor equivalent d2012 2SC734 equivalent 3sk73 equivalent 2sb502 2sa776 bl 2sc2075 equivalent 2sk For Low Noise Audio Amplifier Applications 2sa970 BL equivalent 2sa776 gr
Contextual Info: AUDIO SMALL SIGNAL AMP Package USM Super M ini M ini T O -9 2 A p p lic a tio n • * « m • 2SA1162 2SA1163 General purpose 2SC1815 2SA1015 2SC2458 2SC2459 2SA1048 2SA1049 2SC2712 2SC2713 General purpose L o w Noise 2SC1815 2SA1015© 2SC2458© 2SA2048©

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

TOSHIBA MG150N2YS40

Abstract: mg75n2ys40 MG15N6ES42 mg150n2ys40 2SK150A toshiba s2530a 2sk270a MG8N6ES42 MG15G1AL2 mg75j2ys40
Contextual Info: 小信号トランジスタ SMD ● 当社は品質､信頼性の向上に努めておりますが､一般に半導体製品は誤作動した り故障することがあります｡当社半導体製品をご使用いただく場合は､半導体製 品の誤作動や故障により､生命･身体･財産が侵害されることのないように､購入

j2y transistor

Abstract: T15J10 MP4704 MG100M2CK1 2sb834 MP3103 MG50J6ES91 MP3002 mp4505 2sc497
Contextual Info: As you well know, semiconductors are today essential for use in a very wide range of applications— from consumer to industrial use. In any application, your choice of Toshiba semiconductors will always be correct. To help you choose which semi­ conductor is correct for your application, this brochure outlines maximum ratings,

MG50G2

Contextual Info: dF TOSHIBA íDI SC RE TE /OPT O> 90D 16006 9097 250 T O S HI BA DISCRETE/OPTO TO SH IB A I t OTTHSD DDlbQDt, 1 J ~ SEMICONDUCTOR r-3J-3S~ TOSHIBA GTR MODULE MG30G2YL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

MG50G1BL3

Abstract: MG50G1BL3 toshiba MG50G6EL1 MG50G2CL3 MG50G2cl3 toshiba MG50G1JL1 MG50G2DL1 DT-33-35 toshiba MG50G6EL1 toshiba diode 3D
Contextual Info: TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA ¿Tosìuht TO DISCRETE/OPTO D E | i CH7E5D 0Dlt>a30 t> | 90D 16230 SEMICONDUCTOR M M H M M TECHNICAL DATA G G G G G 5 5 5 5 5 G G G G G 1 1 2 2 6 B J C D E L L L L L DT-33&#39;35' 3 1 3 1 1 Unit In cm 3 Bo- CO - 1-3 M

MG50G2DM1

Abstract: S443 1251C 251C
Contextual Info: TOSHIBA "Í0 -CDISCRETE/OPTQ} 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR D ^ | 101725111 5 1 . 90D 16431 D7"-3f-ö?7 TOSHIBA GTR MODULE M G 5 0 G 2 DM 1 TECHNICAL DATA SILICON N CHANNEL MOS TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

Contextual Info: DiT| SOTTESO GDltESl 3 TOSHIBA {DISCRETE/OPTO} 9097250 TOSHIBA DISCRETE/OPTO TOSHIBA SEMICONDUCTOR 90D 16251 D 7 -3 3 - 3 5 TOSHIBA GTR MODULE MG75H6EL1 TECHNICAL DATA SILICON NPN TRIPLE DIFFUSED TYPE HIGH POWER SWITCHING APPLICATIONS. MOTOR CONTROL APPLICATIONS.

MG150H2DL1

Abstract: MG100G2DL1 MG30G2DL1 MG100G2DL MG50G2DL1 MG75G2DL1 MG100H2DL2 2-98C2A 408 npn
Contextual Info: — 216 — N P N , h y f ’— ' l v y y f ë f â . 2 f f lf t 8 - h 7 ' s i / 7^ 9 2 flf iï* l o 9 ' ~ 'J y o 7 ’J — j M o a ô È t i9 » « 8 K S H f f lU B •9 ' * t — K f t d l -1 E l o iy ± C2 JL y + Y ? ( ^ s ^ t c T ) C l Y f Î