FRS9230 Search Results

Contextual Info: FRS9230D, FRS9230R, FRS9230H 4A, -200V, 1.32 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 4A, -200V, RDS on = 1.32£i TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma - Meets Pre-Rad Specifications to 100KRAD(Si)

Contextual Info: HARRIS SEMICOND SECTOR m SÖE » HARRIS S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS9230 D, R, H • 43G2271 G 0 M S 7 C11 T71 ■ H A S 2N7312D, 2N7312H 2N7312H December 1992 Features Radiation Hardened P-Channel Power MOSFETs

Contextual Info: H RHARRIS U U S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS9230 D, R, H 2N7312D, 2N7312R 2N7312H Radiation Hardened P-Channel Power MOSFETs December 1992 Package Features • «A, -200V, RDS(On) »1.32Q TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concept*

1E14

Abstract: 2E12 FRS9230D FRS9230H FRS9230R
Contextual Info: FRS9230D, FRS9230R, FRS9230H 4A, -200V, 1.32 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Package • 4A, -200V, RDS on = 1.32Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts • Gamma • Gamma Dot • Photo Current

S92-H

Abstract: 1E14 2E12 FRS9230D FRS9230H FRS9230R Rad Hard in Fairchild for MOSFET
Contextual Info: FRS9230D, FRS9230R, FRS9230H 4A, -200V, 1.32 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Features Title RS9 0D, S92 R, S92 H bt A, 0V, 2 m, d rd, anwer OSTs) utho eyrds terrpoon, minctor, ,0V, 2 m, d rd, Package • 4A, -200V, RDS on) = 1.32Ω TO-257AA

2E12

Abstract: 2N7312D 2N7312H 2N7312R 100V 60A N CHANNEL MOSFET
Contextual Info: S E M I C O N D U C T O R REGISTRATION PENDING Currently Available as FRS9230 D, R, H 2N7312D, 2N7312R 2N7312H Radiation Hardened P-Channel Power MOSFETs November 1994 Features Package • 4A, -200V, RDS(on) = 1.32Ω TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: íH HARRIS S E M I C O N D U C T O R FRS9230D, FRS9230R, FRS9230H 4A, -200V, 1.32 Ohm, Rad Hard, P-Channel Power MOSFETs June 1998 Package Features • 4A.-200V, RDS on = 1.32Q TO-257AA • Second Generation Rad Hard MOSFET Results From New Design Concepts

Contextual Info: HARRIS SEniCOND SECTOR SbE ]> • 43Q2271 00422'*! lbT H H A S Radiation Hardness Assurance Program N-C H AN N EL RAD HARD PO W ER MO SFETS INITIAL RATINGS Id s rDS ON 126X182 3 FRM230D 126X182 3 100 14 0.18 2 -4 200 8 0.50 2 -4 FRM234D 126X182 3 250 7 0.70

B402-6

Contextual Info: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF _ k a 0.18 b 100 V 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 N-Channel TO-258AA rDS ON (n ) b 100 V 0.050 41 FRE160, 2N7300 0.080

FSL430

Abstract: FRL-230 FSS430 FSF9250 JANSR2N7272 JANSR2N7275 JANSR2N7278 JANSR2N7281 2N7306 FRM92
Contextual Info: Radiation Hardened MOSFETs, MegaRAD Series N-Channel TO-205AF rDS ON (Ω) ID 100V 0.18 8 FRL130, JANSR2N7272 0.50 5 0.70 4 2.50 N-Channel TO-258AA 200V 250V 500V FRL230, JANSR2N7275 FRL234, JANSR2N7278 2 rDS(ON) (Ω) ID 100V 0.050 41 FRE160, 2N7300 0.080

2N7289

Abstract: 2N7308 2N7331
Contextual Info: Tactical and Strategic Level Selections Radiation Hardened MOSFETs N-Channei TO-3 TO-39 TO-257 TO-254 TO-258 INTERIM FINAL INTERIM FINAL INTERIM FINAL INTERIM FINAL INTERIM FINAL FRM130D FRM130R FRM130H 2N7271 FRL130D FRL130R FRL130H 2N7272 . . FRS130D FRS130R

p-channel 250V 30A power mosfet

Abstract: p-channel 250V 16A power mosfet Power MOSFET P-Channel 250V 50A mosfets Power MOSFETs 19A, 200V, P-Channel Power MOSFET N_CHANNEL MOSFET 100V MOSFET MOSFET 200v 20A n.channel mosfet 40a 200v FRK260
Contextual Info: RAD HARD MOSFETsl RAD HARD TRANSISTORS PAGE Rad Hard Power MOSFET Selection G u id e . 4-3 Rad Hard Data Packages - Harris Power T ra n s is to rs .

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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