FSF9150D Search Results

2E12

Abstract: FSF9150D FSF9150R
Contextual Info: S E M I C O N D U C T O R FSF9150D, FSF9150R Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs June 1997 Features Package • 22A, -100V, rDS ON = 0.140Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

FSF9150R1

Contextual Info: FSF9150D, FSF9150R 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 22A, -100V, rDS ON = 0.140Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

2E12

Abstract: FSF9150D FSF9150D1 FSF9150D3 FSF9150R FSF9150R1
Contextual Info: FSF9150D, FSF9150R 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 22A, -100V, rDS ON = 0.140Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: h a r r is S E M I C O N D U C T O R FSF9150D, FSF9150R 7 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs June 1997 Features Package • 22A, -100V, rDS ON = 0.140£1 TO-254AA • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event

Contextual Info: FSF9150D, FSF9150R 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description . 22A, -100V, rDS 0 N = 0.140£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

7n51

Contextual Info: FSF9150D, FSF9150R HARRIS S E M I C O N D U C T O R 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs Features Description • 22A, -100V, rDS 0N = 0.140Q T h e D is c re te P ro d u c ts O p e ra tio n o f H a rris S e m ic o n d u c to r

2E12

Abstract: FSF9150D FSF9150D1 FSF9150D3 FSF9150R FSF9150R1
Contextual Info: FSF9150D, FSF9150R 22A, -100V, 0.140 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 22A, -100V, rDS ON = 0.140Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: h a r r is S E M I C O N D U C T O R FSF9150D, FSF9150R 7 Radiation Hardened, SEGR Resistant P-Channel Power MOSFETs June 1997 Features Package • 22Â , -1 00V, rDS ON = 0.14 0 ÌÌ TO-254AA • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si)

Power MOSFET Selection Guide

Abstract: TO-205AF Package
Contextual Info: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV0SS V rDS(ON) (fi) T0-205AF 100 0.600 id (A) 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-2Û5AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0,480 5 FSL130D, FSL130R TO-205AF

3203 MOSFET

Abstract: Mosfets mosfet .5a 100v n-channel 250V power mosfet 100V 8A N-Channel MOSFET FSj264
Contextual Info: RAD HARD MOSFETs RAD HARD SEGR MOSFETs PAGE Rad Hard Power MOSFET Selection G u id e . 3-3 Rad Hard Data Packages - Harris Power T ra n s is to re .

MOSFET Selection Guide

Abstract: TO257AA t0-205af TO254AA FSj264
Contextual Info: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV d s s V rDS(ON) (£!) ' d (A) FSL110D, FSL110R PART NUMBER T0-205AF 100 0.600 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-205AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0.480

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning: