FSF9250D1 Search Results

1E14

Abstract: 2E12 FSF9250D FSF9250D1 FSF9250D3 FSF9250R FSF9250R1
Contextual Info: FSF9250D, FSF9250R 15A, -200V, 0.290 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 15A, -200V, rDS ON = 0.290Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

lsd 3222 -20

Contextual Info: FSF9250D, FSF9250R 15A, -200V, 0.290 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description . 15A, -200V, rDS 0 N = 0.290£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

FSF9250R4

Abstract: 1E14 2E12 FSF9250D FSF9250D1 FSF9250D3 FSF9250R FSF9250R1 Rad Hard in Fairchild for MOSFET
Contextual Info: FSF9250D, FSF9250R 15A, -200V, 0.290 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs June 1998 Features Description • 15A, -200V, rDS ON = 0.290Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event

Contextual Info: FSF9250D, FSF9250R 15A, -200V, 0.290 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs December 2001 Features Description • 15A, -200V, rDS ON = 0.290Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs

Contextual Info: FSF9250D, FSF9250R HARRIS S E M I C O N D U C T O R 15A, -200V, 0.290 Ohm, Rad Hard, SEGR Resistant, P-Channel Power MOSFETs J u n e 1998 Features Description • 15A, -200V, rDS ON = 0.290£J T h e D iscre te P ro d u c ts O p e ra tio n o f H arris S e m ic o n d u c to r