FSJ055R3 Search Results

2E12

Abstract: FSJ055D FSJ055D1 FSJ055D3 FSJ055R FSJ055R1 FSJ055R3
Contextual Info: FSJ055D, FSJ055R S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Description • 70A Note 1 , 60V, rDS(ON) = 0.011Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: FSJ055D, FSJ055R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs june 1997 Features • Description 70A Note 1 , 60V, r D S (0 N ) = 0.011 £2 • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

Contextual Info: FSJ055D, FSJ055R 70A, 60V, 0.014 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 70A, 60V, rDS 0 N = 0.014£1 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space

Contextual Info: FSJ055D, FSJ055R Data Sheet 70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs July 1999 File Number 4250.4 Features • 7 0 A , 60V, rQg ONi = 0 .0 1 2£2 • Total D ose T h e D iscrete Products O pe ra tio n of Harris has d evelo ped a

2E12

Abstract: FSJ055D FSJ055D1 FSJ055D3 FSJ055R FSJ055R1 FSJ055R3
Contextual Info: FSJ055D, FSJ055R Data Sheet 70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

2E12

Abstract: FSJ055D FSJ055D1 FSJ055D3 FSJ055R FSJ055R1
Contextual Info: FSJ055D, FSJ055R Data Sheet 70A, 60V, 0.012 Ohm, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs Title SJ05 , J05 bt A, V, 12 m, d rd, GR sist, anwer OSTs) utho eyrds terrpoon, minctor A, V, 12 The Discrete Products Operation of Intersil has developed a