FSJ264D1 Search Results

FSJ264

Abstract: MIL-S-19500 1E14 2E12 FSJ264D FSJ264D1 FSJ264D3 FSJ264R FSJ264R1
Contextual Info: S E M I C O N D U C T O R FSJ264D, FSJ264R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Description • 33A, 250V, rDS ON = 0.080Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: FSJ264D, FSJ264R S em iconductor 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 33A, 250V, i"[ s ON) = 0.080£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

FSj264

Contextual Info: FSJ264D, FSJ264R TM Data Sheet February 2001 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs File Number 4340.3 Features • 33A, 250V, rDS ON = 0.080Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically

Contextual Info: FSJ264D, FSJ264R 39 Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Features • Description 33A, 250V, rDS 0N = 0.080Q • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

1E14

Abstract: 2E12 FSJ264D FSJ264D1 FSJ264D3 FSJ264R FSJ264R1
Contextual Info: FSJ264D, FSJ264R Data Sheet 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2000 • 33A, 250V, rDS ON = 0.080Ω • Total Dose - Meets Pre-rad Specifications to 100 krad (Si) • Single Event - Safe Operating Area Curve for Single Event Effects

Contextual Info: S E M I C O N D U C T O R FSJ264D, FSJ264R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs February 1998 Features Description • 33A, 250V, rDS ON = 0.080Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

Contextual Info: Œ M A FSJ264D, FSJ264R 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 33A, 250V, rDS 0N = 0.0800 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

1E14

Abstract: 2E12 FSJ264D FSJ264D1 FSJ264D3 FSJ264R FSJ264R1 FSJ264R3
Contextual Info: FSJ264D, FSJ264R 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 33A, 250V, rDS ON = 0.080Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically

FSj264

Contextual Info: FSJ264D, FSJ264R Data Sheet 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

FSJ264D3

Abstract: FSJ264R 1E14 2E12 FSJ264D FSJ264D1 Rad Hard in Fairchild for MOSFET
Contextual Info: FSJ264D, FSJ264R Data Sheet 33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs [ /Title FSJ26 4D, FSJ26 4R /Subjec t (33A, 250V, 0.080 Ohm, Rad Hard, SEGR Resista nt, NChann el Power MOSF ETs) /Autho r () /Keyw ords (33A, 250V, 0.080

FSj264

Contextual Info: FSJ264D, FSJ264R HARRIS S E M I C O N D U C T O R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs February 1998 Features • Description The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs