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    FSL234R Search Results

    FSL234R Datasheets (8)

    Part ECAD Model Manufacturer Description Curated Datasheet Type PDF
    FSL234R Intersil 4A, 250V, 0.610 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSL234R1 Fairchild Semiconductor 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFET Original PDF
    FSL234R1 Intersil 4A, 250V, 0.610 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSL234R3 Fairchild Semiconductor 4A, 250V, 0.610 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSL234R3 Intersil 4A, 250V, 0.610 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSL234R4 Fairchild Semiconductor 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFET Original PDF
    FSL234R4 Intersil 4A, 250V, 0.610 ?, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Original PDF
    FSL234R4 Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF

    FSL234R Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    1E14

    Abstract: 2E12 FSL234D FSL234D1 FSL234D3 FSL234R FSL234R1 FSL234R3
    Text: FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSL234D, FSL234R 1E14 2E12 FSL234D FSL234D1 FSL234D3 FSL234R FSL234R1 FSL234R3

    1E14

    Abstract: 2E12 FSL234R4 JANSR2N7397
    Text: JANSR2N7397 Formerly FSL234R4 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF JANSR2N7397 FSL234R4 1E14 2E12 FSL234R4 JANSR2N7397

    1E14

    Abstract: 2E12 FSL234D FSL234D1 FSL234D3 FSL234R FSL234R1 FSL234R3
    Text: FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications. Enhanced Power MOSFET immunity to Single Event


    Original     		PDF FSL234D, FSL234R 1E14 2E12 FSL234D FSL234D1 FSL234D3 FSL234R FSL234R1 FSL234R3

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7397 S E M I C O N D U C T O R Formerly Available As FSL234R4, Radiation Hardened, SEGR Resistant, N-Channel Power MOSFETs January 1998 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    Original     		PDF JANSR2N7397 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7397 Formerly FSL234R4 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET January 2002 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF JANSR2N7397 FSL234R4

    FSL234R

    Abstract: MIL-S-19500 1E14 2E12 FSL234D fsl234 DSA0018976
    Text: S E M I C O N D U C T O R FSL234D, FSL234R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs June 1997 Features Package • 4A, 250V, rDS ON = 0.610Ω • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects


    Original     		PDF FSL234D, FSL234R 36MeV/mg/cm2 O-205AF 1-800-4-HARRIS FSL234R MIL-S-19500 1E14 2E12 FSL234D fsl234 DSA0018976

    1E14

    Abstract: 2E12 FSL234R4 JANSR2N7397 Rad Hard in Fairchild for MOSFET hirel systems transformer 3OBE
    Text: JANSR2N7397 Formerly FSL234R4 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 [ /Title JANS R2N73 97 /Subject (4A, 250V, 0.610 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, 4A, 250V, 0.610


    Original     		PDF JANSR2N7397 FSL234R4 R2N73 1E14 2E12 FSL234R4 JANSR2N7397 Rad Hard in Fairchild for MOSFET hirel systems transformer 3OBE

    Untitled

    Abstract: No abstract text available
    Text: FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 4A, 250V, rDS ON = 0.610Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs


    Original     		PDF FSL234D, FSL234R

    Untitled

    Abstract: No abstract text available
    Text: ES M A « FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 4A ,250V ,rDS ON = 0.610n The Discrete Products Operation of Harris Semiconductor has developed a series o1 Radiation Hardened MOSFETs


    OCR Scan     		PDF FSL234D, FSL234R MIL-STD-750, MIL-S-19500, 500ms;

    Untitled

    Abstract: No abstract text available
    Text: JANSR2N7397 SS MAR Formerly FSL234R4 4A, 250V, 0.610 Ohm, Rad Hard, N-Channel Power MOSFET June 1998 Features Description • 4A, 250V, rDS ON = 0.61 Oil The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs


    OCR Scan     		PDF FSL234R4 JANSR2N7397 MIL-STD-750, MIL-S-19500, 500ms;

    Untitled

    Abstract: No abstract text available
    Text: FSL234D, FSL234R h a frris S E M I C O N D U C T O R " M J a m • Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs Package Features • 4A, 250V, rDS ON : 0.610£1 TO-205AF • Total Dose Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event


    OCR Scan     		PDF FSL234D, FSL234R O-205AF 1-800-4-HARRIS

    Untitled

    Abstract: No abstract text available
    Text: FSL234D, FSL234R 4A, 250V, 0.610 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 4A, 250V, ros ON = 0-610£2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space


    OCR Scan     		PDF FSL234D, FSL234R 36MeV/mg/cm2 100Kolder) 254mm)

    Untitled

    Abstract: No abstract text available
    Text: S FSL234D, FSL234R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs june 1997 Features Package • 4A, 250V, rDS ON = 0.61 Oii • Total Dose - Meets Pre-RAD Specifications to 100K RAD (Si) • Single Event - Safe Operating Area Curve for Single Event Effects


    OCR Scan     		PDF FSL234D, FSL234R O-205AF 36MeV/mg/cm2 1-800-4-HARRIS

    MOSFETS

    Abstract: Power MOSFETs
    Text: RH SEGR MOSFETs PAGE TECHNICAL ASSISTANCE. 2 LINE CARDS Radiation Hardened MOSFETs, MegaRAD Series.


    OCR Scan     		PDF FSL110D, FSL110R FSL130D, FSL130R FSL230D, FSL230R FSL234D, FSL234R FSL430D, FSL430R MOSFETS Power MOSFETs

    7404

    Abstract: No abstract text available
    Text: JAN S Rad Hard Power M OSFET Selection Guide HARRIS P A R T N UM BER FORM ERLY AVAILABLE A S PACKAGE B V D S S V rDS{on) (ß ) Id (A) JANSR2N7272 FRL130R4 TO-2Û5AF 100 0.180 8 JANSR2N7275 FRL230R4 TO-205AF 200 0.500 5 JAN SR2N 7278 FRL234R4 T 0 -205A F


    OCR Scan     		PDF JANSR2N7272 JANSR2N7275 FRL130R4 FRL230R4 FRL234R4 FRF150R FRF250R4 FSL130R4 FSL230R4 FSL234R4 7404

    3203 MOSFET

    Abstract: Mosfets mosfet .5a 100v n-channel 250V power mosfet 100V 8A N-Channel MOSFET FSj264
    Text: RAD HARD MOSFETs RAD HARD SEGR MOSFETs PAGE Rad Hard Power MOSFET Selection G u id e . 3-3 Rad Hard Data Packages - Harris Power T ra n s is to re .


    OCR Scan     		PDF FSL110D, FSL110R FSL13AOD, FSL13AOR FSL23AOD, FSL23AOR FSL23A4D, FSL23A4R FSL130D, FSL130R 3203 MOSFET Mosfets mosfet .5a 100v n-channel 250V power mosfet 100V 8A N-Channel MOSFET FSj264

    MOSFET Selection Guide

    Abstract: TO257AA t0-205af TO254AA FSj264
    Text: Rad Hard Power MOSFET Selection Guide N-Channel PACKAGE BV d s s V rDS(ON) (£!) ' d (A) FSL110D, FSL110R PART NUMBER T0-205AF 100 0.600 3.5 FSL13AOD, FSL13AOR TO-205AF 100 0.180 9 FSL23AOD, FSL23AOR TO-205AF 200 0.350 6 FSL23A4D, FSL23A4R T0-205AF 250 0.480


    OCR Scan     		PDF FSL110D, FSL110R FSL13AOD, FSL13AOR FSL23AOD, FSL23AOR FSL23A4D, FSL23A4R FSL130D, FSL130R MOSFET Selection Guide TO257AA t0-205af TO254AA FSj264

    equivalent data book of 10N60 mosfet

    Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
    Text: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:


    OCR Scan     		PDF 1-800-4HARRIS equivalent data book of 10N60 mosfet MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40