FSS234R4 Search Results

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FSS234R4 JANSR2N7401
Contextual Info: JANSR2N7401 August 1998 Formerly FSS234R4 [ /Title JANS R2N74 01 /Subject (6A, 250V, 0.600 Ohm, Rad Hard, NChannel Power MOSFET) /Autho r () /Keywords (Intersil Corporation, Semiconductor, Rad Hard, NChannel Power MOSFET) /Creator () 6A, 250V, 0.600 Ohm, Rad Hard,

1E14

Abstract: 2E12 FSS234R4 JANSR2N7401 relay 12v 300 ohm
Contextual Info: JANSR2N7401 August 1998 Formerly FSS234R4 File Number 4571 6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET Features The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Contextual Info: JANSR2N7401 January 2002 Formerly FSS234R4 6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET Features The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

FSS234

Abstract: 1E14 2E12 FSS234R4 JANSR2N7401 T0-257AA VGS-12V
Contextual Info: JANSR2N7401 H A R R IS S E M I C O N D U C T O R Formerly FSS234R4 August 1998 File Number 4571 Features 6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET • 6A , 2 50V , rp5^oN = 0 .6 0 0 £ i T h e D iscrete Products O peratio n of H arris S em ico n du cto r

sd 7401

Abstract: T0257
Contextual Info: JA N SR 2N 7401 É S 1 H A R R I S S E M I C O N D U C T O R Formerly FSS234R4 August 1998 6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET • 6A , 2 5 0 V , rQg ONi = 0.600J2 has d evelo p ed a s e ries of R adiation H a rd e n e d M O S F E T s for com m ercial

Contextual Info: JANSR2N7401 f ü H A R R I S S E M I C O N D U C T O R Formerly FSS234R4 August 1998 6A, 250V, 0.600 Ohm, Rad Hard, N-Channel Power MOSFET File Number 4571 Features • 6A, 250V, ro g o i\| = 0.600Q T he D iscrete P roducts O peration of H arris S e m icon ducto r

1E14

Abstract: 2E12 FSS234D FSS234D1 FSS234D3 FSS234R FSS234R1 FSS234R3
Contextual Info: FSS234D, FSS234R 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 6A, 250V, rDS ON = 0.600Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Contextual Info: O FSS234D, FSS234R W ^ R R is 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space appli­

Contextual Info: FSS234D, FSS234R Semiconductor 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs Features Description • 6A, 250V, ros ON = 0-600£i The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs

1E14

Abstract: 2E12 FSS234D FSS234D1 FSS234D3 FSS234R FSS234R1 FSS234R3
Contextual Info: FSS234D, FSS234R 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs June 1998 Features Description • 6A, 250V, rDS ON = 0.600Ω The Discrete Products Operation of Intersil Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

Rad Hard in Fairchild for MOSFET

Abstract: 1E14 2E12 FSS234D FSS234D1 FSS234D3 FSS234R FSS234R1 FSS234R3
Contextual Info: FSS234D, FSS234R 6A, 250V, 0.600 Ohm, Rad Hard, SEGR Resistant, N-Channel Power MOSFETs December 2001 Features Description • 6A, 250V, rDS ON = 0.600Ω The Discrete Products Operation of Fairchild Corporation has developed a series of Radiation Hardened MOSFETs specifically designed for commercial and military space applications.

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
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