FSYC055D Search Results

FSYC055D Datasheets (4)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
FSYC055D		Intersil	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs	Original	PDF	50.43KB	8
FSYC055D1		Fairchild Semiconductor	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs	Original	PDF	90.49KB	9
FSYC055D1		Intersil	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs	Original	PDF	50.42KB	8
FSYC055D3		Intersil	Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs	Original	PDF	50.42KB	8

FSYC055D Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
smd-2 3-pad Contextual Info: FSYC055D, FSYC055R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 70A Note , 60V, rDS(ON) = 0 012i2 The Discrete Products Operation of Harris Semiconductor has developed a series of Radiation Hardened MOSFETs	OCR Scan	FSYC055D, FSYC055R smd-2 3-pad	PDF
2E12 Abstract: FSYC055D FSYC055D1 FSYC055D3 FSYC055R FSYC055R1 FSYC055R3 FSYC055R4 Rad Hard in Fairchild for MOSFET Contextual Info: FSYC055D, FSYC055R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs December 2001 Features Description • 70A Note , 60V, rDS(ON) = 0.012Ω The Discrete Products Operation of Fairchild has developed a series of Radiation Hardened MOSFETs specifically	Original	FSYC055D, FSYC055R 2E12 FSYC055D FSYC055D1 FSYC055D3 FSYC055R FSYC055R1 FSYC055R3 FSYC055R4 Rad Hard in Fairchild for MOSFET	PDF
2E12 Abstract: FSYC055D FSYC055D1 FSYC055D3 FSYC055R FSYC055R1 FSYC055R3 FSYC055R4 Contextual Info: FSYC055D, FSYC055R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 70A Note , 60V, rDS(ON) = 0.012Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically	Original	FSYC055D, FSYC055R 2E12 FSYC055D FSYC055D1 FSYC055D3 FSYC055R FSYC055R1 FSYC055R3 FSYC055R4	PDF
2E12 Abstract: FSYC055D FSYC055D1 FSYC055D3 FSYC055R FSYC055R1 FSYC055R3 FSYC055R4 Contextual Info: FSYC055D, FSYC055R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs July 1998 Features Description • 70A Note , 60V, rDS(ON) = 0.012Ω The Discrete Products Operation of Intersil has developed a series of Radiation Hardened MOSFETs specifically	Original	FSYC055D, FSYC055R 2E12 FSYC055D FSYC055D1 FSYC055D3 FSYC055R FSYC055R1 FSYC055R3 FSYC055R4	PDF
diode smd ED 56a Contextual Info: FSYC055D, F SYCO55R Radiation Hardened, SEGR Resistant N-Channel Power MOSFETs juiy 1998 Features Description • 70A Note , 60V, r[js(ON) = 0.012Q T he D iscrete P roducts O peration of H arris S e m icon ducto r has developed a se rie s o f R adiation H ardened M O S FE T s	OCR Scan	FSYC055D, SYCO55R 36MeV/mg/cm2 FSYC055R diode smd ED 56a	PDF