FUJI TTL Search Results

fuji transistor modules

Contextual Info: HYBRID ICS FOR BASE DRIVING OF POWER TRANSISTOR MODULE Fuji Base Driver Module Hybrid IC EXB356 Abstract The EXB356 is a hybrid - IC base driver used in Fuji transistor modules. It includes opto-couplers for the electrical isolation between in-put side and output side

Contextual Info: SPECIFICATION DEVICE NAME : SILICON DIODE TYPE NAME : E R W 0 4 - 0 6 0 SPEC. No. :_ _ _ . DATE_ :_ Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE APPROVED Fuji Electric C o j j t d

2SK2808-01MR

Contextual Info: SPECIFICATION DEVICE NAME : Power MOSFET TYPE NAME 2SK2808-01 MR - SPÊC.NO. Fuji Electric CoMLtd. This Specification is subject to change without notice. DATE ' NAME APPROVED Fuji Electric Co.,Ltd. CHECKED I ' ' I DWG. NO. D RA W N / 1/0 Y 0257 -R -00 4a

Contextual Info: SPECIFICATION DEVICE NAME : SILICON DIODE TYPE NAME : E R W 0 4 - 0 6 0 SPEC. No. :_ _ _ . DATE_ :_ Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE APPROVED Fuji Electric C o j j t d

Contextual Info: ThI« m alarial and ha Information haraln la 1ha praparty of Fuji Elaelrio Co.pltd . Thay »hall ba nalthar raproduead, coplad, lanl. or dlacloaad In any way whataoavar for tha uta of any third party nor uaad for lh« manufacturing purpoaai w ithout tha axpraai wrtttan conMnt of Fuji ElaoOHc Co.Ltd.

EXB357

Abstract: PW-20 2sd1157 2SD115 PW20
Contextual Info: 1 1.2 * Fuji Base Driver Module Hybrid IC EXR357 Abstract The EXB357 is a hybrid-IC base driver used in FUJI transistor modules. It includes opto-couplers for the electrical isolation between in-put side and out-put side of base drive circuit and can drive a wide range of

fuji ipm

Abstract: ipm application note fuji 6MBP30RH060 fuji capacitor ipm application fuji 30a GDGS532 A05 zener fin heat sink igbt fuji igbt transistor modules fuji transistor modules
Contextual Info: Thla matarla! and ha Information haraln I» lha preparly of Fuji Glaatrlc Co,Lid. Thay ahailba nalthar reproduced, ooplad, lant, or disclosed In any way whatsoever for tha vie of any third party nor uaad for tha manufacturing purpose* w ithout tha expre»» written oonaant of Fuji EiectrlQ Co,Ltd.

fuji ipm

Abstract: 6MBP15RY060 KBFA
Contextual Info: ThI« m alarial and ha Information haraln la 1ha praparty of Fuji Elaelrio Co.pltd . Thay »hall ba nalthar raproduead, coplad, lanl. or dlacloaad In any way whataoavar for tha uta of any third party nor uaad for lh« manufacturing purpoaai w ithout tha axpraai wrtttan conMnt of Fuji ElaoOHc Co.Ltd.

g47e

Abstract: F4084 1MBH10D-060 1MBH10D-060-S06TT
Contextual Info: third parly nor used or the m anufacturing purposes Ihe express written consent ol Fuji Electric Co.Ltd. w ith o u t This rnnlorlnl nnd (he Information heroin is Ihe properly of Fuji Electric C o .,U d . They slinll l>e neither re p ru d u cu d , c o p ie d ,

Contextual Info: third parly nor used or the m anufacturing purposes Ihe express written consent ol Fuji Electric Co.Ltd. w ith o u t This rnnlorlnl nnd (he Information heroin is Ihe properly of Fuji Electric C o .,U d . They slinll l>e neither re p ru d u cu d , c o p ie d ,

GFIJ

Contextual Info: S P E C I F I C A T I O N TENTAT DEVICE NAME : TYPE NAME : IVE P o w e r MOSFET 2 S K 2 7 5 4 - Q 1 L . S SPEC. No. Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE NAME APPROVED Fuji Electric CoJ-ld DRAWN CHECKED

2SK2651-01MR

Abstract: 2SK2651
Contextual Info: S P E C I F I C A T I O N DEVICE NAME TYPE NANE Powe r M O S F ET 2 S K 2 6 5 1- 0 1M R SPEC. No. Fuji E l e c t r i c Co.,Ltd. This Specification is subject to change without notice. DATE DRAWN NAME APPROVED Fuji Electric CajJcL CHECKED 12 Y 0257-R-004a 1 . Scope

rjh igbt

Abstract: HF IGBT 7MBP150RA060
Contextual Info: FUJI a - 7 D7 ^ h [IT L S E T T Ir jO E FUJI NEW SEMICONDUCTOR PRODUCTS 1^9 IGBT-IPM 14# Jk ^ 3 6 0 0 V /15 0 A /7 in one-package R series 7MBP150RA060 Features IPM-N y V - X t S fô '& V & Z / ^ y ' r - - y IG B T 5 1 7 y < D T j f à & ì & m m m n t c ¿

fbii

Abstract: 7MBP50RA060 8011 fuji igbt SS200
Contextual Info: FUJI B lL tlE T F Ü S á O E FUJI NEW SEMICONDUCTOR PRODUCTS IG B T -IP M M I m ±m st 6 0 0 V /5 0 A /7 in one-package R s e r ie s 7MBP50RA060 Features i& M & t V 7 y I PM- N y U - X t K M * # & 3 A 7 ^ - v I GBT ^ - y 7°C0Tj J: 5 <t ¡ t i t 1114 7)U S

fuji IGBT

Abstract: 6mbp50r
Contextual Info: FUJI 2 7 D ? y h FUJI NEW SEMICONDUCTOR PRODUCTS IG B T -IP M 14# H 6MBP50RA060 h X < 7 51 > 7 IPM-N '> i; - X 7 R s e r ie s Features fé ílífc t V 7 IG B T ^ 6 0 0 V /5 0 A /6 in one-package 1 !§B'I4 7 & v 7<7)Tj J: 5 K B fM tg E iS ;£ i:l 5 í s 3 £ 1 4 0 ) Ü í i

1823-01R

Abstract: 2SK1823-01R T151 FA-MT A2260
Contextual Info: 2SK1823-01R FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET FAP-IIIA SERIES I Features Outline Drawings ►High current ►-ow on-resistance ►slo secondary breakdown ►.ow driving power ►High forward Transconductance ►\valanche-proof ►ncluding G-S Zenner diode

pj 899 diode

Abstract: pj 899 2SK899 SC-65 T151 A213
Contextual Info: 2SK899 FUJI POWER MOS FET N-CHANNEL SILICON POWER MOS-FET F-I • Features SERIES lOutline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage ■Applications • Switching regulators • UPS

Contextual Info: cP June 1990 Edition 2.0 DATA SHEET = FUJI'/ - MB3854 BI-DIRECTIONAL MOTOR DRIVER BI-DIRECTIONAL MOTOR DRIVER The Fujitsu MB3854 is a low voltage motor driver with forward/reverse control capability for motors such as those in auto focus film advancing mechanism,

AFFV

Contextual Info: FUJI 2SK2754-01 L,S N-channel MOS-FET FAP-IIS Series > Features - 0,65£2 450V 10A 80W > Outline Drawing High Speed Switching Low On-Resistance No Secondary Breakdown Low Driving Power High Voltage V gs = ± 30V Guarantee Repetitive Avalanche Rated > Applications

2SK901

Abstract: A2-19 SC-65 T151 TE 901
Contextual Info: 2SK901 ">T FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET _ - F-I SERIES • Features , ■Outline Drawings • High speed switching • Low on-resistance • No secondary breakdown • Low driving power ■Applications • U PS • DC DC converters

pj 899 diode

Abstract: 2SK899 pj 899 SC-65 T151
Contextual Info: 2SK899 FUJI POW ER MOS^FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES lOutline Drawings I Features High speed switching Low on-resistance No secondary breakdown Low driving power High voltage •Applications Switching regulators U PS 1DC-DC converters 'General purpose power amplifier

CG51754

Abstract: fujitsu asic CE51654 CG51114 CG51284 CG51364 CG51484 CG51214 CG51654 CG-51
Contextual Info: cP FUJI' Novem ber 1995 Edition 1.5 DATA SHEET = - ' CG51/CE51 SERIES 3V, 0.50 MICRON HIGH PERFORMANCE/LOW POWER CMOS GATE ARRAYS DESCRIPTION The Fujitsu CG51/CE51 is a series of ultra high performance CMOS gate arrays. The CG51 is a high density Sea-of-Gates

Contextual Info: MB85402-30 MB85W2-40 FUJI 'S TS255-B88Y Nov. 1988 CMOS 16,384 Words x 16-Bit STATIC RANDOM ACCESS MEMORY MODULE The Fujitsu MB85402 is a fully decoded, CMOS Static random access memory module comprised of four MB81C75 devices mounted on a 36—pin ceramic board.

2SK727-01

Abstract: SC-65
Contextual Info: 2SK727-01 FUJI POWER MOS-FET N-CHANNEL SILICON POWER MOS-FET F-I SERIES Outline Drawings • Features • High speed switching • Low on-resistance • No secondary breakdown • Low driving power • High voltage • Avalanche-proof ■A pplications • Switching regulators