MB81C75 Search Results

MB81C75-35

Abstract: MB81C75-25 MB81C75
Contextual Info: March 1990 Edition 3.0 ~ ~ — DATA S H E E T = cP FUJITSU - - MB81C75-25/-30/-35 CMOS 64K-BIT HIGH-SPEED SRAM 16K Words x 4 Bits High-Speed CMOS Static Random Access Memory The Fujitsu MB81C75 is a 16,384 words x 4 bits static random access memory

Contextual Info: MB85402-30 MB85W2-40 FUJI 'S TS255-B88Y Nov. 1988 CMOS 16,384 Words x 16-Bit STATIC RANDOM ACCESS MEMORY MODULE The Fujitsu MB85402 is a fully decoded, CMOS Static random access memory module comprised of four MB81C75 devices mounted on a 36—pin ceramic board.

Contextual Info: FUJI CMOS 16,384 Words x 16-Bit STATIC RANDOM ACCESS MEMORY MODULE The Fujitsu MB85402 is a fully decoded, CMOS Static random access memory module comprised of four MB81C75 devices mounted on a 36-pin ceramic board. Organized as four 16K x 4 devices, the MB85402 is op­

Contextual Info: FU 31 CMOS 16,384 Words x 32-Bit HIGH SPEED STATIC RANDOM ACCESS MEMORY MODULE The Fujitsu MB85414 is a fully decoded, CHOS static random access memory module consists of nine MB81C75A devices mounted on a 64-pin plastic board. Organized as eight 16K x 4 devices, the MB85414 is

Contextual Info: May 1990 FUJITSU PRODUCT PROFILE MB85414-30/-40 CMOS STATIC RAM MODULE 16384 Words x 32-Bit The Fujitsu MB85414 is a fully decoded, CMOS static random access memory module SRAM with eight MB81C75 devices mounted on a 64-pin Epoxy module. These modules incorporate a presence detect feature that

mzp e 002 42 05

Abstract: mzp a 002 44 05 MZP a 002 47 05 MZP A 002 57 06
Contextual Info: FUJITSU MICROELECTRONICS 31E D 374^7^2 001333=5 T H F H I May 1990 Fujitsu PRO D U CT P R O FILE • M B 85415-30/40 CMOS STATIC RAM MODULE 16384 Words x 36-Bit The Fujitsu MB85415 is a fully decoded, CMOS static random access memory module SRAM with nine MB81C75 devices mounted on a 70-pln

Contextual Info: March 1990 Édition 3.0 FUJITSU DATA SHEET MB81C 7 5 -25/-30/-3S CMOS 64K-BIT HIGH-SPEED SRAM 16K Words x 4 Bits High-Speed CMOS Static Random Access Memory Tha Fujitsu MB81C75 is a 16,384 words x 4 bits static random aocess memory fabricated with a CMOS silicon gats process. Tha memory uses asynchronous

Contextual Info: FUJITSU MICROELECTRONICS 374^2 31E D 0013335 S M ay 1990 T - I FMI C, - X } - f FUJITSU P R O D U C T PRO FILE MB85414-30/-40 CMOS STATIC RAM MODULE 16384 Words x 32-Bit The Fujitsu MB85414 is a fully decoded, CMOS static random access memory module SRAM with eight MB81C75 devices mountedon a 64-pin

Contextual Info: May 1990 FUJITSU P R O D U C T P R O F IL E • MB85415-30/40 CMOS STATIC RAM MODULE 16384 Words x 36-Bit The Fujitsu MB85415 is a fully decoded, C M O S static random access memory module SRAM with nine MB81C75 devices mounted on a 70-pin Epoxy module. Additionally, these modules incorporate a presence detect

Contextual Info: im su 16K X MB85414-30 MB85414-40 32 CMOS SRAM MODULE TS260- A 8 8 Y Nov. 1988 CMOS 16,384 Words x 32-Bit HIGH SPEED STATIC RANDOM ACCESS MEMORY MODULE The Fuji t s u MB85414 is a fully decoded, CMOS static r a ndom access memory m o dule consists of nine MB81C75A

MB81C75

Contextual Info: May 1990 FUJITSU PRODUCT PROFILE- M B 85402-30/40 CMOS STATIC RAM MODULE 16384 Words x 16-Bit The Fujitsu MB85402 is a fully decoded, CMOS static random access \ memory modu le SRAM with four MB81C75 devices mounted on a 36-pin ceramic module. Organized as four 16K x 4 devices, the MB85402 is

81c75

Abstract: MB81C75 MB81C75-25
Contextual Info: CMOS 65,536-BIT STATIC RANDOM ACCESS MEMORY FU JITSU MB81C75-25 MB81C75-35 February 191 E d itio n 2.0 1 6 K x 4 B I T 6 5 , 5 3 6 - B IT H IG H S P E E D S T A T IC R A N D O M A C C E S S M E M O R Y W IT H A U T O M A T IC P O W E R D O W N The Fujitsu M B 8 1 C 7 5 is a 16,384-words by 4-bits static random access

Contextual Info: FUJITSU MICROELECTRONICS 374*^2 31E D 0013331 S May 1990 I FMI T"~44-'23-/V- FUJITSU PRODUCT p r o f i l e : MB85402-30/40 CMOS STATIC RAM MODULE 16384 W ords X 16-Bit The Fujitsu MB85402 is a fully decoded, CMOS static random access O memory module SRAM with four MB81C75 devices mountedon a 36-pin 1

Contextual Info: TS270—A893 March 1989 6 4 K - B I T 1 6 , 3 8 4 x 4 B i - C M O S H I G H S P E E D S T A T I C RANDOM ACCESS MEMORY WITH AUTOMATIC POWER DOWN The Fujitsu MB82B75 is a 16,384-words by 4-bits static random access memory fabricated with a CMOS silicon gate process. To make power dissipation lower and high

IMS1630

Abstract: HY62256 SGS-Thomson HITACHI HM6116 DALLAS SEMICONDUCTOR Ds1235 MK4503 hm6116 cross UPD4361 SSM7188 MK4501
Contextual Info: CROSS REFERENCE AMD SGS-THOMSON Group DALLAS Semiconductor SGS-THOMSON Group AM2147 IMS1203 DS2009 MK4501/H01 AM2148/9 IMS1223 DS2010 MK45H02 AM2167 IMS1403 DS2011 MK4503/H03 AM2168 IMS1423 or MK41 H68 DS2012 MK45H04 AM9126 MK6116 DS1210 MK48Z02 AM99C68 IMS1423 or MK41 H68

uPD23C4000

Abstract: 93c46 atmel sony Cross Reference atmel 93c66 HN62404P 93C46L rom at29c010 Hitachi SRAM cross reference x2864a UPD23C2000
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. C R O S S REFEREN CE GUIDE 3.1 Video RAM Density 256K 512K Feature Minimum Organization 64Kx4 Samsung KM424C64 Minimum 64Kx8 KM428C64 Minimum 256KX4 KM424C256 Micron Hitachi Ti HM53461 2 TMS4461 HM534251 TM S44C250 TC524256A

STATIC RAM 8464

Abstract: IMS1433 SSM6116 IMS1630 SSM6171 SSM7188 hitachi selection guide SSM7164 hm6264 ic 6116 ram
Contextual Info: 16K Product S e le c tio n -C ro s s Reference Guide 16K Static RAM — Product Selection Typical Power mW Maximum Speed (ns) Part No/'» L7C167 Description Packages Available121 Com. Mil. Oper. Inactive Pins 8 10 135 75 20 DIP, LCC SOIC (Gull-Wing) SOJ (J-Lead)

IDT71961L-15

Abstract: IDT71981L-55 IDT71981L-70 IDT71981S-45 IDT71981S-55 IDT71981S-70 IDT71982L-45 IDT71982L-55 IDT7198L35 MB81C75-25
Contextual Info: - 76 6 4 K -Í X m % CC y CMOS -f- y 7 TAAC max ns) TCAC max (ns) TOE max (ns) TOH min (ns) TOD max (ns) TWP min (ns) 20 S t a t i c RAM ( 1 6 3 8 4 x 4) m tî 1$ TDS rain (ns) TDH min (ns) TWD min (ns) TWR max (ns) V D D or V C C (V) 2 4 P I N 6 4 E 4 À

mcm2018a

Abstract: sun hold RAS 0610 cqq 765 RT IC HX 710B U256D
Contextual Info: Selector Guide and Cross Reference CMOS Dynamic RAMs DRAM Modules Video RAMs Pseudo Static RAMs General MOS Static RAMs CMOS Fast Static RAMs CMOS Fast Static RAM Modules Application Specific MOS Static RAMs MOS EEPROM Military Products Reliability Information

41C464

Abstract: 41C1000 TC55B8128 424170 NEC CY70199 44C1000 IOT7164 HN62308BP HN62404P TC5116100
Contextual Info: MEM ORY ICs CRO SS REFERENCE GUIDE 3. C R O SS REFERENCE GUIDE 3.1 DRAM Density 25 6 K Org. X 1 X 4 1M X 1 X 4 4M X 1 X 4 x8 16M M ode Sa m su n g F. Page KM 41C256 TC 51256 N ibble KM 41C257 TC 51257 S. C o lu m n KM 41C258 TC 51258 H M 51 258 MB81258 F. Page

K93C46

Abstract: 93cs46n MB832001 hn62308 41C1000 93C46LN 41464 hn623257 HM63832 DT71256
Contextual Info: MEMORY ICs CROSS REFERENCE GUIDE 3. CROSS REFERENCE GUIDE 3.1 DRAM D ensity 256K X 1 F. P a g e KM 41C 256 TC 51256 X 1 X 4 4M X 1 X 4 , 1 6M To sh iba M od e X 4 1M Sam su ng Org. H ita ch i Fu jitsu HM 51256 M B81256 NEC /iP D 4 1 2 5 6 N ib b le KM 41C 257

TC55B4257

Abstract: 93C46L UPD23C4000 atmel 93c66 KM628512 Hitachi SRAM cross reference atmel 93c57 TC55B465 upd23c8000 93c56v
Contextual Info: CROSS REFERENCE GUIDE MEMORY ICs 3.1 Video RAM Density 256K Feature Minimum Organization 64K x4 Samsung KM424C64 Micron Toshiba NEC Hitachi Ti HM53461 2 TMS4461 HM534251 TMS44C250 TC524256A HM534251A SMJ44C250 TC524256B HM534252 MT42C4064 /a PD41264 /<PD42264

Contextual Info: FUJITSU CMOS 65536-BIT BI-CMOS MB82B75-1B STATIC RANDOM ACCESS MEMORY MB82B75-20 TS270-A893 March 1989 6 4 K - B I T 1 6 ,384 x 4 B i - C M O S H I G H SPE E D S T A T I C RANDOM ACCESS M E MO R Y WITH AUTOMATIC POWER DOWN The Fujitsu MB82B75 is a 16,384-words by 4-bits static

philips diode PH 33J

Abstract: UM61256FK-15 sem 2106 inverter diagram IDT7024L70GB um61256 UM61256ak sram um61256fk15 HIGH VOLTAGE ISOLATION DZ 2101 C5584 IDT74LVC1G07ADY
Contextual Info: QUICKSWITCH PRODUCTS HIGH-SPEED LOW POWER CMOS 10-BIT BUS SWITCHES QS3L384 QS3L2384 FEATURES/BENEFITS DESCRIPTION • • • • • • • • • The QS3L384 and QS3L2384 provide a set of ten high-speed CMOS TTL-compatible bus switches. The low ON resistance of the QS3L384 allows inputs to be connected to outputs without