FUJITSU 42 PINS IC DATA Search Results

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Abstract: MB4138 MB4138PFQ hard disk head preamp R/474 Kr capacitor
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-25210-2E ASSP Magnetic Disk BIPOLAR Read/Write Amplifier For HDD MR and Thin Film Composite Heads, 6 Channels MB4138 • DESCRIPTION The MB4138 is a 6-channel read/write amplifier IC for magneto-resistive (MR) and inductive thin film composite

rwc 32

Abstract: Pre amplifier hdd MAGNETIC HEAD circuit MR head thin film MAGNETIC HEAD hard disk head preamp MAGNETIC Write HEAD circuit top 48 C1 MB4138 MB4138PFQ
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS04-25210-2E ASSP Magnetic Disk BIPOLAR Read/Write Amplifier For HDD MR and Thin Film Composite Heads, 6 Channels MB4138 • DESCRIPTION The MB4138 is a 6-channel read/write amplifier IC for magneto-resistive (MR) and inductive thin film composite

Contextual Info: 2 IN I cO January 1991 Edition 1.0 FUJITSU DATASHEET• MB838200/L CMOS 8M-BIT MASK READ ONL Y MEMORY 512K x 16 1M x 8 CMOS MASK READ ONLY MEMORY The Fujitsu MB838200/L is a CMOS Si-gate mask-programmable static read only memory organized as 524,288 words by 16 bits or 1,048,576 words by 8 bits.

Contextual Info: <p Product Fill Datasheet_ U J November 1996 Version 4.1 MB582A & MB583A 155-Mbps SDH/SONET ATM Transceiver FM L/N PD/XCVRS/DS/1321 The MB582A and MB583A form a transceiver chipset used for high­ speed, point-to-point communications over optical fibers such as in ATM

Contextual Info: FUJITSU MICROELECTRONICS 53E D • 374=17132 0007=163 7 ■ " T - M W - Z S - ltf October 1989 Edition 1.0 FUJITSU DATA SHEET : M B 8 5 4 1 0 -30/-40 64Kx 8 CMOS SRAM MODULE CMOS 65,536 WORDS X 8-BIT HIGH SPEED STATIC RANDOM ACCESS MEMORY MODULE The Fujitsu MB85410 is a fully decoded, CMOS static random access memory module

Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS04-27260-2E ASSP For Power Management Applications General Purpose DC/DC Converter 2ch DC/DC Converter IC with Synchronous Rectification MB39C011A • DESCRIPTION The MB39C011A is a two-channel DC/DC converter IC suitable for down-conversion that utilizes synchronous

H9618

Abstract: MB9AF104 MB9AF102R MB9AF104R MB9AF102 MB9A100 MB9AF102NBGL h9517 MB9AF102RPMC SCL1133
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS706-00006-1v0-E 32-bit ARMTM CortexTM-M3 based Microcontroller FM3 MB9A100 Series MB9AF102N/R, F104N/R  DESCRIPTION The MB9A100 Series are a highly integrated 32-bit microcontroller that target for high-performance and

MB9AF105N

Abstract: MB9AF104NA MB9AF104R k3759 h9618 MB9AF102 C8 SOT5 PINS MB9A100A MB9AF104
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS706-00022-1v0-E 32-bit ARMTM CortexTM-M3 based Microcontroller MB9A100A Series MB9AF102NA/RA, F104NA/RA, F105NA/RA DESCRIPTION The MB9A100A Series are a highly integrated 32-bit microcontroller that target for high-performance and

MB39C011

Abstract: MB39C011A triangularwave generator fujitsu polymer TSSOP-16 VT100 DS04-27260-2E
Contextual Info: FUJITSU MICROELECTRONICS DATA SHEET DS04-27260-2E ASSP For Power Management Applications General Purpose DC/DC Converter 2ch DC/DC Converter IC with Synchronous Rectification MB39C011A • DESCRIPTION The MB39C011A is a two-channel DC/DC converter IC suitable for down-conversion that utilizes synchronous

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS704-00002-0v02-E 16-bit Proprietary Microcontroller CMOS 2 F MC-16FX MB96680 Series MB96F683/F685* „ DESCRIPTION MB96680 series is based on Fujitsu’s advanced 16FX architecture 16-bit with instruction pipeline for RISC-like performance . The CPU uses the same instruction set as the established 16LX series - thus

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00005-4v0-E Memory FRAM 4 M Bit 512 K x 8 MB85R4001A • DESCRIPTIONS The MB85R4001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS

MB85R4001ANC-GE1

Abstract: MB85R4001A IC TRAY
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00005-2v0-E Memory FRAM 4 M Bit 512 K x 8 MB85R4001A • DESCRIPTIONS The MB85R4001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-4v0-E Memory FRAM 1 M Bit 128 K x 8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS

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Abstract: JEDEC TRAY DIMENSIONS - TSOP48
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00005-3v0-E Memory FRAM 4 M Bit 512 K x 8 MB85R4001A • DESCRIPTIONS The MB85R4001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS

MB966

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS704-00008-0v01-E 16-bit Proprietary Microcontroller CMOS 2 F MC-16FX MB96620 Series MB96F622/F623/F625 * „ DESCRIPTION MB96620 series is based on Fujitsu’s advanced 16FX architecture 16-bit with instruction pipeline for

MB87024

Abstract: mb87007 buzzer tmb 034K0 0451008
Contextual Info: JUN 2 9 1W2 March 1992 Edition 1.0A DATA SHEET • FUJITSU MB4515 Telephone 1C with Speech Network, Tone Ringed and Filter The Fujitsu MB4515 telephone integrated circuit IC contains a speech network circuit, tone ringer circuit, and filter circuit. It is optimized to use with dialer ICs

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS704-00012-0v01-E 16-bit Proprietary Microcontroller CMOS 2 F MC-16FX MB96630 Series MB96F636/F637* „ DESCRIPTION MB96630 series is based on FUJITSU’s advanced 16FX architecture 16-bit with instruction pipeline for RISC-like performance . The CPU uses the same instruction set as the established 16LX series - thus

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS704-00009-0v01-E 16-bit Proprietary Microcontroller CMOS 2 F MC-16FX MB96640 Series MB96F646/F647* „ DESCRIPTION MB96640 series is based on Fujitsu’s advanced 16FX architecture 16-bit with instruction pipeline for RISC-like performance . The CPU uses the same instruction set as the established 16LX series - thus

ISO16845

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS704-00001-0v02-E 16-bit Proprietary Microcontroller CMOS 2 F MC-16FX MB96670 Series MB96F673/F675* „ DESCRIPTION MB96670 series is based on Fujitsu’s advanced 16FX architecture 16-bit with instruction pipeline for RISC-like performance . The CPU uses the same instruction set as the established 16LX series - thus

TW-LAD

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS04-28501-2E Single Chip 8-Bit A/D and 9-Bit D/A Converter MB40168/MB40178 • DESCRIPTION The Fujitsu MB40168 and MB40178 are high speed, low power single chip A/D and D/A converters designed for video processing applications. The A/D converter has a resolution of 8 bits while the D/A converter has 9bit resolution. They are fabricated in Fujitsu’s advanced bipolar technology, and housed in a 48-pin plastic shrink

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00005-3v0-E Memory FRAM 4 M Bit 512 K x 8 MB85R4001A • DESCRIPTIONS The MB85R4001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 524,288 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-2v0-E Memory FRAM 1 M Bit 128 K x 8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-3v0-E Memory FRAM 1 M Bit 128 K  8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words  8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-3v0-E Memory FRAM 1 M Bit 128 K  8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words  8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS