MB85R1001A Search Results
MB85R1001A Price and Stock
RAMXEED MB85R1001ANC-GE1IC FRAM 1MBIT PARALLEL 48TSOP |
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MB85R1001ANC-GE1 | Tray | 518 | 1 |
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MB85R1001ANC-GE1 | 1 |
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KAGA FEI America Inc MB85R1001ANC-GE1F-RAM 1Mbit FeRAM (128k x8) parallel interface - TSOP48 tray |
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MB85R1001ANC-GE1 | 692 |
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FUJITSU Limited MB85R1001ANC-GE1Fram, 1M, Parallel, 3V, 48Tsop; Memory Type:Fram; Memory Size:1Mbit; Nvram Memory Configuration:128K X 8Bit; Ic Interface Type:Parallel; Access Time:100Ns; Memory Case Style:Tsop; No. Of Pins:48Pins; Supply Voltage Min:3V; Supply Rohs Compliant: Yes |Fujitsu MB85R1001ANC-GE1 |
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MB85R1001ANC-GE1 | Bulk | 1 |
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MB85R1001ANC-GE1 | 1,221 |
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RAMXEED MB85R1001APFCN1Mbit FRAM x8 parallel TSOP48 |
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MB85R1001APFCN | 1 |
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FCL Ciomponents Limited MB85R1001ANC-GE1(Alt: MB85R1001ANC-GE1) |
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MB85R1001ANC-GE1 | 15 Weeks | 128 |
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MB85R1001A Datasheets (1)
Part | ECAD Model | Manufacturer | Description | Curated | Datasheet Type | PDF Size | Page count | |
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MB85R1001ANC-GE1 |
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Memory, Integrated Circuits (ICs), IC FRAM 1MBIT 150NS 48TSOP | Original | 16 |
MB85R1001A Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-2v0-E Memory FRAM 1 M Bit 128 K x 8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS |
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DS501-00003-2v0-E MB85R1001A MB85R1001A | |
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-0v01-E Memory FRAM CMOS 1 M Bit 128 K x 8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells created using ferroelectric process and silicon gate CMOS process |
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DS501-00003-0v01-E MB85R1001A MB85R1001A | |
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-4v0-E Memory FRAM 1 M Bit 128 K x 8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS |
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DS501-00003-4v0-E MB85R1001A MB85R1001A | |
Contextual Info: FUJITSU SEMICONDUCTOR FACT SHEET NP501-00005-3v0-E FRAM MB85R1001A MB85R1001A is a 1M-bits FRAM LSI using the ferroelectric process and CMOS process technologies for forming the nonvolatile memory cells. Because FRAM is able to write high-speed even though a nonvolatile memory, |
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NP501-00005-3v0-E MB85R1001A MB85R1001A FPT-48P-M48) | |
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-3v0-E Memory FRAM 1 M Bit 128 K 8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS |
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DS501-00003-3v0-E MB85R1001A MB85R1001A | |
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-3v0-E Memory FRAM 1 M Bit 128 K 8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS |
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DS501-00003-3v0-E MB85R1001A MB85R1001A | |
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS501-00003-1v0-E Memory FRAM 1 M Bit 128 K x 8 MB85R1001A • DESCRIPTIONS The MB85R1001A is an FRAM (Ferroelectric Random Access Memory) chip consisting of 131,072 words × 8 bits of nonvolatile memory cells fabricated using ferroelectric process and silicon gate CMOS |
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DS501-00003-1v0-E MB85R1001A MB85R1001A |