FUJITSU FLM 150 Search Results

Contextual Info: FLM1415-6F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P ^ b = 37.0dBm Typ. High Gain: G ^ g = 5.5dB (Typ.) High PAE: riadd = 20% (Typ.) Low IM3 = -45dBc@Po = 26.0dBm (Typ.) Broad Band: 14.5 ~ 15.3GHz Impedance Matched Zin/Zout = 50Q

FLM1011-4C

Abstract: Fujitsu FLM 150 1011-4C
Contextual Info: nm-rcii FLM1011-4C r U JI1bU Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 35.5dBm Typ. • • • • • High Gain: G-j^B = 6.0dB (Typ.) High PAE: riadd = 24% (Typ.) Broad Band: 10.7 ~ 11.7GHz Impedance Matched Zin/Zout = 50Q

Contextual Info: FLM1414-8F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P ^ b = 39.0dBm Typ. High Gain: G ^ b = 6.0dB (Typ.) High PAE: riadd = 27% (Typ.) Low IM3 = -46dBc@Po = 28.5dBm (Typ.) Broad Band: 14.0 ~ 14.5GHz Impedance Matched Zin/Zout = 50Q

FLM1213-4C

Abstract: GaAs FETs fujitsu gaas fet N32C microwave databook
Contextual Info: p. FLM1213-4C . J Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 35.5dBm Typ. • • • • • High Gain: G-j^B = 5.0dB (Typ.) High PAE: riadd = 22% (Typ.) Broad Band: 12.7 ~ 13.2GHz Impedance Matched Zin/Zout = 50Q Hermetically Sealed

0910-4C

Abstract: 09104
Contextual Info: FLM 0910-4C Internally Matched Power CìaAs I E l s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage VDS 15 V Gate-Source Voltage vgs -5 V 25 w -65 t o +175 °c 175 °c Total Power Dissipation pt

1213-6F

Contextual Info: F| .ft . FLM1213-6F i Internally Matched Power GaAs FETs FEATURES • High Output Power: P-idg = 37.5dBm Typ. • High Gain: G-j^B = 7.0dB (Typ.) • High PAE: r iadd = 27% (Typ.) • Low IM3 = -45dBc@Po = 25dBm • Broad Band: 12.7 ~ 13.2GHz • Impedance Matched Zin/Zout = 50Q

Fujitsu FLM 150

Abstract: 5964-6D
Contextual Info: FLM 5964-6D Internally Matched Power CiaAs I 'E l s ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Symbol Condition Rating Unit Drain-Source Voltage vds 15 V Gate-Source Voltage vgs -5 V 31.2 w °c Total Power Dissipation Tc = 25°C pt Storage Temperature

Contextual Info: FLM3742-25F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 44.5dBm Typ. High Gain: G ^ b = 10.5dB (Typ.) High PAE: riadd = 41% (Typ.) Low IM3 = -46dBc@Po = 33.5dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q

FLM7179-12F

Abstract: cq 443 fet 2819 18 g
Contextual Info: FLM7179-12F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 41 -506171 Typ. High Gain: G ^ b = 9.0dB (Typ.) High PAE: riadd = 38% (Typ.) Low IM3 = -46dBc@Po = 30.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Q

Contextual Info: FLM5964-4F C-Band Internally Matched FET FEATURES • • • • High Output Power: P ^ b = 36.5dBm Typ. High Gain: G ^ b =10.0dB (Typ.) High PAE: riadd = 37% (Typ.) Low IM3 = -46dBc@Po = 25.5dBm • Broad Band: 5.9 ~ 6.4GHz • Impedance Matched Zin/Zout = 50Q

Contextual Info: FLM1415-3F Internally Matched Power GaAs FET FEATURES • • • • • • • High Output Power: P ^ b = 34.5dBm Typ. High Gain: G ^ b = 5.5dB (Typ.) High PAE: r!add = 23% (Typ.) Low IM3 = -46dBc@Po = 23.5dBm (Typ.) Broad Band: 14.5 ~ 15.3GHz Impedance Matched Zin/Zout = 50Q

cq 838

Abstract: FLM7179-6F CQ 539
Contextual Info: FLM7179-6F C-Band Internally Matched FET FEATURES • • • • • • • High Output Power: P ^ b = 38.5dBm Typ. High Gain: G ^ b = 9.0dB (Typ.) High PAE: riadd = 34% (Typ.) Low IM3 = -46dBc@Po = 27.5dBm Broad Band: 7.1 ~ 7.9GHz Impedance Matched Zin/Zout = 50Q

Contextual Info: FLM7785-12F C-Band Internally Matched FET FEATURES • High Output Power: P ^ b = 41 -506171 Typ. • High Gain: G ^ b = 8.5dB (Typ.) • High PAE: riadd = 34% (Typ.) • Low IM3 = -46dBc@Po = 30.5dBm • Broad Band: 7.7 ~ 8.5GHz • Impedance Matched Zin/Zout = 50Q

FLM4450-25DA

Abstract: FLM4450-25D
Contextual Info: F, . FLM4450-25DA r UJ11 j U Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 44dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: r!add = 35% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q

Contextual Info: FLM3742-18DA FI f e l l J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 42.5dBm Typ. High Gain: = 10.5dB (Typ.) High PAE: riadd = 33% (Typ.) Low IM3 = -45dBc@Po =31.5dBm Broad Band: 3.7 ~ 4.2GHz Impedance Matched Zin/Zout = 50Q

Contextual Info: FLM1414-2 co FUJITSU Internally Matched Power GaAs FETs FEATURES • High Output Power: P ^ b = 33.5dBm Typ. • High Gain: G ^ b = 5.0dB (Typ.) • High PAE: riadd = 24% (Typ.) • Broad Band: 14.0 ~ 14.5GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed

5964-6D

Contextual Info: F, . FLM5964-6D r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 38.0dBm Typ. High Gain: G ^ b = 10.0ÒB (Typ.) High PAE: r!add = 36% (Typ.) Low IM3 = -45dBc@Po = 27dBm Broad Band: 5.9 ~ 6.4GHz

FLM0910-4C

Contextual Info: FLM0910-4C FUJITSU Internally Matched Power GaAs FETs FEATURES • High Output Power: P ^ b = 36dBm Typ. • High Gain: G ^ b = 7.5dB (Typ.) • High PAE: riadd = 30% (Typ.) • Broad Band: 9.5 ~ 10.5GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed

1414-6F

Abstract: 2620D 14K4
Contextual Info: FLM1414-6F FUJITSU Internally M atched Power GaAs FETs FEATURES • High Output Power: P-idg = 37.5dBm Typ. • High Gain: G -j^B = 6.0dB (Typ.) • High PAE: r iadd = 26% (Typ.) • Broad Band: 14.0 ~ 14.5GHz • Impedance Matched Zin/Zout = 50Q • Hermetically Sealed

7177-8C

Abstract: FLM7177-8C/D
Contextual Info: FLM7177-8C Fuffrsu Internally M a tc h e d P o w e r G a A s F E T s FEATURES • • • • • • High Output Power: P-idg = 39dBm Typ. High Gain: G-j^B = 7.0dB (Typ.) High PAE: r iadd = 29% (Typ.) Broad Band: 7.1 ~ 7.7GHz Impedance Matched Zin/Zout = 50Q

FLM6472-25DA

Contextual Info: F| .ÇjU-, FLM6472-25DA Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 44dBm Typ.) High Gain: G ^ b = 7.0dB (Typ.) High PAE: riadd = 32% (Typ.) Low IM3 = -45dBc@Po = 32dBm Broad Band: 6.4 ~ 7.2GHz Impedance Matched Zin/Zout = 50Q

Contextual Info: F,¿¡U,. FLM5964-8C r UJ11 jU Internally Matched Power GaAs FETs FEATURES • • • • • • High Output Power: P ^ b = 39.0dBm Typ. High Gain: G ^ b = 8.0dB (Typ.) High PAE: riadd = 30% (Typ.) Broad Band: 5.9 ~ 6.4GHz Impedance Matched Zin/Zout = 50Q

FLM4450-12DA

Abstract: FLM4450-12D
Contextual Info: F, , FLM4450-12DA J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 41 dBm Typ. High Gain: G ^ b = 10.5dB (Typ.) High PAE: riadd = 36% (Typ.) Low IM3 = -45dBc@Po = 30dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q

FLM4450-18DA

Contextual Info: F, , FLM4450-18DA J Internally Matched Power GaAs FETs FEATURES • • • • • • • High Output Power: P ^ b = 42.5dBm Typ. High Gain: G ^ b = 9.5dB (Typ.) High PAE: riadd = 32% (Typ.) Low IM3 = -45dBc@Po = 31.5dBm Broad Band: 4.4 ~ 5.0GHz Impedance Matched Zin/Zout = 50Q