FUJITSU HEMT Search Results

FETEX-150

Abstract: biosensor Palm Vein Technology WX300 "CMOS GATE ARRAY" fuji graphene SHINKO pharma suite riken fujitsu optical module
Contextual Info: Corporate Data History of Fujitsu ● Business 1935 ～ Developments ● Jun 20, 1935 ⿟Fuji Tsushinki Manufacturing Corporation, the company that later becomes Fujitsu Limited, is born as an offshoot of the communications division of Fuji Electric. The new company is

Contextual Info: FLX257XV GaAs FET & HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 33.5dBm Typ. High Gain: G -j^B = 7.5dB(Typ.) High PAE: r iadd = 31% (Typ.) Proven Reliability &Bp|B|^Bp|B|^B P|B|^|b P|b P|B DESCRIPTION The FLX257XV chip is a pow er GaAs FET that is

FLC30

Abstract: FLC307XP fujitsu gaas fet fujitsu hemt
Contextual Info: FLC307XP - GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P-|<jB = 34.8dBm Typ. High Gain: G ^ b = 9.5dB(Typ.) High PAE: r]add = 37%(Typ.) Proven Reliability DESCRIPTION

FLC157XP

Abstract: C-Band Power GaAs FET HEMT Chips fujitsu hemt fujitsu gaas fet
Contextual Info: FLC157XP - GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P-|<jB = 31.5dBm Typ. High Gain: G ^ b = 6.0dB(Typ.) High PAE: r i ^ d = 29.5%(Typ.) Proven Reliability DESCRIPTION

fujitsu hemt

Abstract: FHX04 FHX04LG 4232 gm CQ 527
Contextual Info: FHX04LG/LP, 05LG/LP, 06LG/LP Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg s 0.25|iim, Wg = 200|iim • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package

fujitsu hemt

Abstract: fujitsu gaas fet FSX017X GaAs FET HEMT Chips
Contextual Info: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: PidB=21.5dBm Typ. @8.0GHz • High Power Gain: G-|dB=11dB(Typ.)@8.0GHz • Proven Reliability DESCRIPTION The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic

FHX13LP

Abstract: FHX14LP transistor fhx 35 lp FHX13LG FHX13 fujitsu hemt FHX14LG Z150 low noise hemt transistor low noise hemt
Contextual Info: FHX13LG/LP, 14LG/LP Super Low Noise HEMT FEATURES • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) • High Associated Gain: 13.0dB (Typ.)@f=12GHz • Lg s 0.15|iim, Wg = 200|iim • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package

Contextual Info: FLC087XP - GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P-|<jB = 28.5dBm Typ. High Gain: G ^ b = 7.0dB(Typ.) High PAE: r i ^ d = 31.5%(Typ.) Proven Reliability DESCRIPTION

FLK017XP

Abstract: GaAs FET HEMT Chips
Contextual Info: FLK017XP - GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P-|<jB = 20.5dBm Typ. High Gain: G ^ b = 8.0dB(Typ.) High PAE: riadd = 26%(Typ.) Proven Reliability DESCRIPTION

C-Band Power GaAs FET HEMT Chips

Abstract: fujitsu gaas fet GaAs FET HEMT Chips fujitsu hemt
Contextual Info: FLC307XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: hadd = 37%(Typ.) Proven Reliability Drain DESCRIPTION Drain Gate Drain Gate Drain Gate Gate Source Source The FLC307XP chip is a power GaAs FET that is designed for

fhc40lg

Abstract: 18GHZ LG 932 fujitsu hemt
Contextual Info: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ≤ 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package

FHX13X

Abstract: FHX13 FHX14X fujitsu hemt RF POWER TRANSISTOR C 10-12 GHZ chip
Contextual Info: FHX13X, FHX14X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.45dB Typ. @f=12GHz (FHX13) High Associated Gain: 13.0dB (Typ.)@f=12GHz Lg ≤ 0.15µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX13X, FHX14X are Super High Electron Mobility Transistor

FHX35LG

Abstract: FHX35LP low noise hemt fujitsu hemt 1 987 280 103 FHX35
Contextual Info: FHX35LG/LP -FEATURES • • • • • Super Low Noise HEMT Low Noise Figure: 1.2B Typ. @ f=12G Hz High A ssociated Gain: 10.0dB (Typ.)@ f=12G Hz Lg s 0.25|iim, W g = 280|iim Gold Gate M etallization for High Reliability

12QHz

Abstract: FSX027X GaAs FET HEMT Chips fujitsu gaas fet
Contextual Info: FSX027X - GaAs FET & HEMT Chips FEATURES • Medium Power Output: P-|dB=24.5dBm Typ. @8.0GHz • High Power Gain: GidB=10dB(Typ.)@ 8.0GHz • Proven Reliability DESCRIPTION The FSX027X is a general purpose GaAs FET designed for medium

fujitsu gaas fet

Abstract: FLC307XP C-Band Power GaAs FET HEMT Chips
Contextual Info: FLC307XP GaAs FET & HEMT Chips FEATURES • • • • High Output Power: P1dB = 34.8dBm Typ. High Gain: G1dB = 9.5dB(Typ.) High PAE: ηadd = 37%(Typ.) Proven Reliability Drain DESCRIPTION Drain Gate Drain Gate Drain Gate Gate Source Source The FLC307XP chip is a power GaAs FET that is designed for

FLK107XV

Abstract: tc 5082
Contextual Info: FLK107XV GaAs FET & HEMT Chips FEATURES • • • • High O utput Power: P-|<jB = 30.0dBm Typ. High Gain: G ^ b = 6.5dB(Typ.) High PAE: r iadd = 31% (Typ.) Proven Reliability DESCRIPTION The FLK107XV chip is a pow er G aAs FET that is designed for general purpose applications in the Ku-Band

FHR20X

Abstract: GaAs FET HEMT Chips 0840 057 TM 1628
Contextual Info: FHR20X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=18GHz High Associated Gain: 10.0dB (Typ.)@f=18GHz Lg ≤ 0.15µm, Wg = 100µm Gold Gate Metallization for High Reliability DESCRIPTION The FHR20X is a Super High Electron Mobility Transistor

Contextual Info: FHR20X - GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=18GHz High Associated Gain: 10.0dB (Typ.)@f=18GHz Lg s 0.15|iim, Wg = 100|iim Gold Gate Metallization for High Reliability

Contextual Info: FHX45X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.55dB Typ. @f=12GHz High Associated Gain: 12.0dB (Typ.)@f=12GHz Lg ² 0.15µm, Wg = 280µm Gold Gate Metallization for High Reliability Drain DESCRIPTION Gate The FHX45X is a Super High Electron Mobility Transistor

Low Noise HEMT

Abstract: Super low noise figure and high associated gain
Contextual Info: FHC40LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg ² 0.15µm, Wg = 280µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package

fujitsu hemt

Abstract: fujitsu transistor HEMT fhc40lg 280AM low noise hemt
Contextual Info: FHC40LG - Super Low Noise HEMT FEATURES • Low Noise Figure: 0.3dB Typ. @f=4GHz • High Associated Gain: 15.5dB (Typ.)@f=4GHz • Lg s 0.15|iim, Wg = 280|iim • Gold Gate Metallization for High Reliability

FSX017X

Abstract: fujitsu hemt GaAs FET HEMT Chips
Contextual Info: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic

FSX017X

Contextual Info: FSX017X GaAs FET & HEMT Chips FEATURES • Medium Power Output: P1dB=21.5dBm Typ. @8.0GHz • High Power Gain: G1dB=11dB(Typ.)@8.0GHz • Proven Reliability Drain DESCRIPTION Source The FSX017X is a general purpose GaAs FET designed for medium power applications up to 12GHz. These devices have a wide dynamic

transistor 1345

Abstract: FHR02X FHX02X GaAs FET HEMT Chips
Contextual Info: FHR02X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 1.0dB Typ. @f=18GHz High Associated Gain: 9.0dB (Typ.)@f=18GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX02X is a High Electron Mobility Transistor(HEMT)