FHX04X
Abstract: FHX04 FHX05X FHX06X GaAs FET HEMT Chips hemt low noise die
Text: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility
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FHX04X,
FHX05X,
FHX06X
12GHz
FHX04)
FHX06X
2-18GHz
FHX04X
FHX04
FHX05X
GaAs FET HEMT Chips
hemt low noise die
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fujitsu hemt
Abstract: No abstract text available
Text: FHX04LG/LP, 05LG/LP, 06LG/LP Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg ² 0.25µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHX04LG/LP,
05LG/LP,
06LG/LP
12GHz
FHX04)
FHX05LG/LP,
FHX06LG/LP
2-18GHz
fujitsu hemt
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FHX04
Abstract: FHX04X FHX05X FHX06X GaAs FET HEMT Chips hemt low noise die
Text: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility
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FHX04X,
FHX05X,
FHX06X
12GHz
FHX04)
FHX06X
2-18GHz
FHX04
FHX04X
FHX05X
GaAs FET HEMT Chips
hemt low noise die
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FHX04
Abstract: FHX04X FHX05X FHX06X hemt low noise die
Text: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility
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FHX04X,
FHX05X,
FHX06X
12GHz
FHX04)
FHX06X
2-18GHz
FHX04
FHX04X
FHX05X
hemt low noise die
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hemt low noise die
Abstract: No abstract text available
Text: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ² 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility
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FHX04X,
FHX05X,
FHX06X
12GHz
FHX04)
12GHz
FHX06X
2-18GHz
hemt low noise die
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FHX04LG
Abstract: FHX04 FHX05LG FHX06LG TVRO 4232 gm fujitsu hemt FHX*LG
Text: FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHX04LG,
12GHz
FHX04)
FHX05LG,
FHX06LG
2-18GHz
FCSI0598M200
FHX04LG
FHX04
FHX05LG
TVRO
4232 gm
fujitsu hemt
FHX*LG
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FHX04LG
Abstract: FHX04 FHX05LG FHX06LG low noise hemt 2-18G 12GAS
Text: FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHX04LG,
12GHz
FHX04)
FHX05LG,
FHX06LG
2-18GHz
FHX04LG
FHX04
FHX05LG
low noise hemt
2-18G
12GAS
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Untitled
Abstract: No abstract text available
Text: FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHX04LG,
12GHz
FHX04)
FHX05LG,
FHX06LG
2-18GHz
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FHX04
Abstract: FHX04LG FHX05LG FHX06LG Eudyna Packaging
Text: FHX04LG, 05LG, 06LG Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg ≤ 0.25µm, Wg = 200µm • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHX04LG,
12GHz
FHX04)
FHX05LG,
FHX06LG
2-18GHz
FHX04
FHX04LG
FHX05LG
Eudyna Packaging
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Untitled
Abstract: No abstract text available
Text: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility
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FHX04X,
FHX05X,
FHX06X
12GHz
FHX04)
FHX06X
2-18GHz
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FHX04X
Abstract: fujitsu hemt GaAs FET HEMT Chips hemt low noise die FHX04 FHX05X FHX06X FET transistors with s-parameters FUJITSU AU GM 90 562 573
Text: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) High Associated Gain: 10.5dB (Typ.)@f=12GHz Lg ≤ 0.25µm, Wg = 200µm Gold Gate Metallization for High Reliability DESCRIPTION The FHX04X, FHX05X, FHX06X are High Electron Mobility
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FHX04X,
FHX05X,
FHX06X
12GHz
FHX04)
FHX06X
2-18GHz
FHX04X
fujitsu hemt
GaAs FET HEMT Chips
hemt low noise die
FHX04
FHX05X
FET transistors with s-parameters
FUJITSU AU
GM 90 562 573
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MRF947T1 equivalent
Abstract: MRF947T1 equivalent transistor NJ1006 BFP320 fll120mk FLL101ME MGF4919G fujitsu gaas fet fhx76lp HPMA-2086 MMBR521L
Text: California Eastern Laboratories CEL / NEC - Complete Cross Reference Manufacturer Part Nbr NEC 2SA1977 NEC 2SA1978 NEC 2SC2351 NEC 2SC3355 NEC 2SC3357 NEC 2SC3545 NEC 2SC3583 NEC 2SC3585 Toshiba Matsushita Matsushita NEC 2SC4093 NEC 2SC4094 NEC 2SC4095 Hitachi
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2SA1977
2SA1978
2SC2351
2SC3355
2SC3357
2SC3545
2SC3583
2SC3585
2SC4093
2SC4094
MRF947T1 equivalent
MRF947T1 equivalent transistor
NJ1006
BFP320
fll120mk
FLL101ME
MGF4919G
fujitsu gaas fet fhx76lp
HPMA-2086
MMBR521L
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Untitled
Abstract: No abstract text available
Text: FHX04X, FHX05X, FHX06X GaAs FET & HEMT Chips FEATURES • • • • Low N o ise F igure: 0.7 5 d B T y p . @ f= 1 2 G H z (F H X 04) H igh A s s o c ia te d G ain: 1 0.5d B (T yp .)@ f= 1 2 G H z Lg s 0.25|iim , W g = 200|iim G old G a te M e ta lliz a tio n fo r H igh R e lia b ility
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FHX04X,
FHX05X,
FHX06X
FCSI0598M200
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FHX34X
Abstract: FHX13x
Text: MICRO WAV, SEM ICONDUCTOR LOW NOISE HEMT CHIPS Electrical Characteristics Ta = 25 C NF TYP. (dB) Gas TYP. (dB) f (GHz) Vd s m (mA) FHX04X 0.75 10.5 12 2 10 FHXQ5X 0.9 10.5 12 2 10 FHX06X 1.1 10.5 12 2 10 FHX13X 0.45 13.0 12 2 10 FHX14X 0.55 13.0 12 2 10
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FHX04X
FHX06X
FHX13X
FHX14X
FHX34X
FHX35X
FHX45X
FHR02X
FHR20X
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fujitsu hemt
Abstract: FHX04 FHX04LG 4232 gm CQ 527
Text: FHX04LG/LP, 05LG/LP, 06LG/LP Super Low Noise HEMT FEATURES • Low Noise Figure: 0.75dB Typ. @f=12GHz (FHX04) • High Associated Gain: 10.5dB (Typ.)@f=12GHz • Lg s 0.25|iim, Wg = 200|iim • Gold Gate Metallization for High Reliability • Cost Effective Ceramic Microstrip (SMT) Package
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FHX04LG/LP,
05LG/LP,
06LG/LP
12GHz
FHX04)
FHX05LG/LP,
FHX06LG/LP
2-18GHz
fujitsu hemt
FHX04
FHX04LG
4232 gm
CQ 527
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FSX52WF
Abstract: GaAs HEMTs X band FSX017LG FHX05LG fhx06lg FSU01LG
Text: LOW NOISE HEMTs Electrical Characteristics Ta = 25°C NF TYP. (dB) Gas TYP. (dB) f (GHz) VDS (V) •os (mA) Package Type Frequency Band FHC40LG* 0.30 15.5 4 2 10 LG/LP C FHX13LG* 0.45 12.5 12 2 10 LG/LP FHX14LG* 0.60 12.5 12 2 10 LG/LP FHX04LG* 0.75 10.5
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FHC40LG*
FHX13LG*
FHX14LG*
FHX04LG*
FHX05LG*
FHX06LG*
FHX35LG*
FHR02FH
FSX52WF
GaAs HEMTs X band
FSX017LG
FHX05LG
fhx06lg
FSU01LG
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Untitled
Abstract: No abstract text available
Text: , FHX04LG 05LG, 06LG Low Noise H E M T ABSOLUTE MAXIMUM RATING Ambient Temperature Ta=25°C Item Condition Symbol Rating Unit Drain-Source Voltage Vd S 3.5 V Gate-Source Voltage VGS -3.0 V Total Power Dissipation Ptot 180 mW Storage Temperature Tstg -65 to +175
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FHX04LG
4000Q.
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FHX04FA
Abstract: FHC30FA FHX04f
Text: - 252 - G a A s F E T M 9 # F H C 3 0 F A /L G B É :SHF m *± 3 Vos V ¡» s s (mA) 15. 00 40. 00 «jlìfcg Vg s (V) Gm(mS) 45. 00 60. 00 - - 1 . 00 S i l f i o y ' * - ? R ÌO m t» : « f f iît W g Îf c , * < » l J Î 4 o t S Ü : GaAs HEMT. P t (mW)*
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FHC30FA
10ijiA
I4FHC31FA
UFHX04FA
Ids-10Â
12GHz
10ihA.
FHX05FA/LG
iFHX05FA
FHX04FA
FHC30FA
FHX04f
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FHX04FA
Abstract: 3SK71 FHR10X 3SK38 FHR01FH FHX05FA 3SK38A NEC 2501L 4AK15 4AK17
Text: - 130 - ft f m % tt m m € * 1 % K V* V, m * * tit /E Vg s * E % * (V (A) « » * P d /P c h (W) S (Ta=25,C ) 14 . Ig s s (max) (A) Vg s (V) (min) (max) Vd s (V) (V) (V) (min) (max) Vd s (A) (A) (V) c (min) (typ) Vd s (S) (s) (V) Id (A) Id (A) Chop
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3SK38
3SK38A
3SK71
4AK15
4AK16
4AK17
60/115nstyp
2SK971/2SJ173
6AM13
CXD7500M
FHX04FA
FHR10X
3SK38
FHR01FH
FHX05FA
NEC 2501L
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GaAs FET HEMT Chips
Abstract: S2V 15
Text: F H X 0 4 X , FHX05X, FHX06X GaAs FET & HEMT Chins ELECTRICAL CHARACTERISE CS Amb ient Temperature Ta=25°C Item Test Conditions Symbol Transconductance 9m VDS = 2V, Id s = 10mA 15 35 Pinch-off Voltage vp vd s = 2V, ids = 1mA -0.2 Saturated Drain Current
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FHX05X,
FHX06X
FHX06X
FHX05X
FHX04X
12GHz
GaAs FET HEMT Chips
S2V 15
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FLC301XP
Abstract: FLC301XP equivalent FLK052XP Fujitsu GaAs FET application note ISS1B1 CS98E1V6R800-K41D CS98E1V6R000-K41B fujitsu "application notes" FJS-DS-158 fll171
Text: APPLICATION NOTES II. FET CHIPS A. REMOVAL OF GaAs FET AND HEMT CHIPS FROM SHIPPING CONTAINERS 1 REQUIREMENTS Anti-static work surface Grounding cable and wrist Metal tweezers or vacuum Clean container to receive Binocular microscope with strap probe transferred chips
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FMC141401-02
Abstract: fujitsu gaas marking code Fujitsu K022 FLL300-2 FLL55 FSX52WF FUJITSU L101 fujitsu x51 FLL200-2 FLL300-1
Text: APPLICATION NOTES I. PACKAGED FETS and MODULES A. HANDLING PREECAUTIONS GaAs FETS are sensitive to electrostatic discharge. Fujitsu ships all GaAs FETs in electrostatic protection packaging. User must pay careful attention to the following precautions when taking
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FSX52WF
Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
Text: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of
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FLX202MH-12
FLK202MH-14
FSX52WF
fujitsu "application notes"
fsx51wf
NF037
FMC141401-02
FLL101
fll171
FMC1414P1-02
FLL55
FLL120MK
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