FUJITSU L BAND AMPLIFIER Search Results

sampa

Abstract: AY-3-0214 top octave generator ic
Contextual Info: FU J I TS U M I C R O E L E C T R O N I C S 374^2 47E D M ay 1991 Edition 1.0 DATA S H E E T : 0 0 1 Ô 37 1 S « F H I _ FUJITSU MB86460A MODEM WITH INTERNAL VOICE-BAND FILTERS CMOS MODEM CIRCUIT WITH INTERNAL VOICE-BAND FILTERS FOR CORDLESS TELEPHONES The MB86460 MSK Minimum Shift Keying modem IC contains a 1200-band MSK

UA 733

Abstract: MB3501
Contextual Info: FUJITSU MB3501 WIDE BAND VIDEO AMPLIFIER Ju ly 1988 E d itio n 2.0 WIDE BAND VIDEO AMPLIFIER The M B 350 1 is a m o n o lith ic d iffe re n tia l in p u t, d iffe r e n tia l o u tp u t, w id e b a n d vid eo a m p lifie r. O w in g to a d o p tio n o f feedback c ir c u itr y , w id e b a n d w id th and

fujitsu power amplifier GHz

Abstract: fujitsu l band amplifier fujitsu rf power amplifier l band
Contextual Info: FMM5021MU 1.5GHz MMIC Driver Amplifier DESCRIPTION The FMM5021MU is a MMIC driver amplifier with gain control that is designed for Personal Digital Cellular PDC applications in the 1,5GHz band. The driver amplifier includes three amplifier stages and a variable attenuator.

FMM5024ML

Contextual Info: FMM5024ML 800MHz MMIC Driver Amplifier DESCRIPTION The FMM5024ML is a MMIC driver amplifier with gain control and is designed for applications in the 800 to 1000 MHz band. The driver amplifier includes two amplifier stages and a variable attenuator. FEATURES

Contextual Info: FMM5512ZE 800MHz Band GaAs Power Amplifier MMIC DESCRIPTION The FMM5512ZE contains a two-stage amplifier that is designed for AMPS applications in the 824 to 849MHz frequency range. This product is well suited for applications where high power, high efficiency, low noise power, and single power supply are required.

fujitsu mmic ic

Abstract: k BAND LOW PHASE gaAs FET
Contextual Info: FMM5509ZE 800MHz Band GaAs Power Amplifier MMIC DESCRIPTION The FMM5509ZE contains a two-stage amplifier that is designed for AMPS applications in the 824 to 849MHz frequency range. This product is well suited for applications where high power, high efficiency, low noise power, and single power supply are

GSC371BAL2000

Abstract: Fujitsu GaAs FET application note GSC371-BAL2000 12v class d amplifier 40W FLL400IP-2 gaas fet vhf uhf GSC371 soshin RO3010 fujitsu rf power amplifier l band
Contextual Info: FUJITSU APPLICATION NOTE - No 002 1930MHz - 1990 MHz PCS BASE STATION APPLICATIONS 40 Watt Push-Pull Amplifier using the FLL400IP-2 GaAs FET FEATURES • Meets CDMA ACP at Pout>8W • Easy tuning for Power, IM3 or CDMA ACP • Over 40 W P1dB over entire PCS band

2329500

Contextual Info: FMM5508ZE 1800MHz Band GaAs Power Amplifier MMIC DESCRIPTION The FMM5508ZE contains a three-stage amplifier that is designed for 4.8V PCN/PCS applications in the 1710-1785MHz and 1850-1910MHz frequency range. This product is well suited for applications where high power, high efficiency, low noise power, and sin­

amplifier 900mhz

Contextual Info: • FMM5514ZE 900MHz Band GaAs Power Amplifier MMIC DESCRIPTION The FMM5514ZE contains a three-stage amplifier that is designed for GSM cellular phone applications in the 890 to 915 MHz frequency range. This product is well suited for applications where high power, high efficiency, low noise power, and

FUJITSU MICROWAVE TRANSISTOR

Abstract: class A push pull power amplifier 150w FLL1500IU-2C FLL1500 Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz 4433b IMT-2000 push pull class AB RF linear S110 transistor
Contextual Info: FUJITSU APPLICATION NOTE - No 004 150-W, 2.11- 2.17 GHz Push-Pull Amplifier For IMT-2000 BaseStation Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average • Easy tuning for Power, WCDMA ACPR, and IMD • Over 150 Watts Pout over entire band

FUJITSU MICROWAVE TRANSISTOR

Abstract: FLL600IQ-2C 60W POWER AMPLIFIER CIRCUIT Fujitsu GaAs FET application note FLL600IQ-2 fujitsu power amplifier GHz push pull class AB RF linear 1.3 GHz 4433B IMT-2000 GAAS FET AMPLIFIER f 10Mhz to 2 GHz
Contextual Info: FUJITSU APPLICATION NOTE - No 005 60-W, 2.11 – 2.17 GHz Push-Pull Amplifier for IMT-2000 Base Station Application using the FLL600IQ-2C GaAs FET FEATURES • Targeted WCDMA ACPR at 6 W Average • Easy tuning for Power, WCDMA ACPR and IMD • Over 60 Watts Pout over entire band

FUJITSU MICROWAVE TRANSISTOR

Abstract: Fujitsu GaAs FET application note FLL800IQ-2C 4433B push pull class AB RF linear 1.3 GHz FLL600IQ-3 IMT-2000 understanding thermal basics for microwave power
Contextual Info: FUJITSU APPLICATION NOTE - No 006 80-W, 2.11 – 2.17 GHz Push-Pull Amplifier for IMT-2000 Base Station Application Using the FLL800IQ-2C GaAs FET FEATURES • Targeted WCDMA ACPR at 8W Average Pout • Easy tuning for Power, WCDMA ACPR and IMD • Over 80 Watts Pout over entire band

Contextual Info: FMM5804X 17.5-31.5GHz Power Amplifier MMIC FEATURES • Output Power: P id B : 23.0dBm (Typ.) • High Gain: ( G ^ b ): 18dB (Typ.) • High PAE: riadd = 18% (Typ.) •;■ * ,iq'-4 ‘; .*■' 1; 1TH '-W S *. .•xJ1 ' ji l * ■ ! > : , ! J 9 ■ L 1

FUJITSU MICROWAVE TRANSISTOR

Abstract: understanding thermal basics for microwave power FLL600IQ-3 Fujitsu GaAs FET application note 4433B high power fet amplifier schematic mmds passband filter fll600iq ATC 100A 4pF push pull class AB RF linear 1.3 GHz
Contextual Info: FUJITSU APPLICATION NOTE - No 007 60-W, 2.5- 2.7 GHz Push-Pull Amplifier For MMDS Base-Station Application Using The FLL600IQ-3 GaAs FET Device FEATURES • Targeted WCDMA ACPR at 6 W average • Easy tuning for Power, WCDMA ACPR, and IMD • Over 60 Watts Pout over entire band

FUJITSU MICROWAVE TRANSISTOR

Abstract: FLL1500IU-2C Fujitsu GaAs FET application note 4433B fujitsu power amplifier GHz balun transformer 50ohm F217 stub tuner matching FLL1500
Contextual Info: FUJITSU APPLICATION NOTE - No 008 150-W, 2.11- 2.17 GHz Balanced Compact Amplifier For IMT2000 Base-Station Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average Pout • Easy tuning for Power, WCDMA ACPR, and IMD

FUJITSU MICROWAVE TRANSISTOR

Abstract: FLL1500IU-2C Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz FLL1500 class A push pull power amplifier 150w 4433B IMT-2000 push pull class AB RF linear L band stub tuner matching
Contextual Info: FUJITSU APPLICATION NOTE - No 009 150-W, 2.11- 2.17 GHz Push-Pull Compact Amplifier For IMT-2000 Base-Station Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average Pout • Easy tuning for Power, WCDMA ACPR, and

FSX52WF

Abstract: fujitsu "application notes" fsx51wf NF037 FMC141401-02 FLL101 fll171 FMC1414P1-02 FLL55 FLL120MK
Contextual Info: APPLICATICI NOTES IV. DESIGN SUGGESTIONS A. RECOMMENDED DEVICE LINE-UPS This section contains recommended line-ups of Fujitsu Semiconductor devices for amplifier applications in common frequency bands. The continuity of these line-ups has been checked using minimum values of

B3604

Contextual Info: Aprì! 1990 Edition 2.0 FUJITSU DATA SH EET '• MB3604 HIGH FREQUENCY OPERATIONAL AMPLIFIER HIGH FREQUENCY SINGLE OPERATIONAL AMPLIFIER The Fujitsu M B3604 is a m o n o lith ic high frequency operational am plifier fabricated by Fujitsu Bipolar Technology.

Contextual Info: F U J IT S U December 1988 Edition 3.0 MAGNETIC DISK HEAD AMPLIFIER The Fujitsu MB4111/MB4113 is a monolithic bipolar integrated circuit opti­ mized for high performance application to disk head systems. The MB4111/MB4113 is featured with the following four major functions to

Contextual Info: FUJITSU Decem ber 1988 Ed itio n 3 .0 MAGNETIC DISK HEAD AMPLIFIER The Fu jitsu M B 4 1 11/M B4113 is a m onolithic bipolar integrated circu it opti­ mized fo r high performance application to disk head systems. The M B 41 1 1/M B4113 is featured w ith the follow ing four major functions to

Contextual Info: FMM5026ML 1.9GHz MMIC Driver Amplifier DESCRIPTION The FMM5026ML is a MMIC driver amplifier that includes two amplifier stages and a variable attenuator. This new product is uniquely suited for Personal Communications System PCS/PCN applications in the 1.8 to

Contextual Info: ¡0 FUJITSU MICROELECTRONICS 31E D D 37 MT7ti2 Ga iS L >4 0 b HBFMI 010002850201000201000201000201020100 HIGH FREQ UENCY O PE R A TIO N A L A M P L IFIE R The Fujitsu MB3604 is a monolithic high frequency operational amplifier fabricated by Fujitsu Bipolar Technology.

Contextual Info: F U JIT S U HIGH FREQUENCY OPERATIONAL AMPLIFIER I I MB3604 Decem ber 1987 E d itio n 1.0 HIGH FREQUENCY OPERATIONAL AMPLIFIER The Fujitsu MB3604 is a monolithic high frequency operational amplifier fabricated by Fujitsu Bipolar Technology. The MB3604 has differential inputs, single-end output, and an on-chip buffer

Contextual Info: FMM5701X 24GHz Low Noise Amplifier MMIC FEATURES • Low Noise Figure: NF=1,5dB MAX. @ f=20GHz NF=1.8dB (MAX.) @ f=24GHz NF=2.3dB (MAX.) @ f=28GHz • High Associated Gain: Gas=15.0dB (MIN.) @ f=20GHz Gas=12.0dB (MIN.) @ f=24GHz Gas=9.0dB (MIN.) @f=28GHz