FUJITSU RF POWER AMPLIFIER 1.6 Search Results

FUJITSU MICROWAVE TRANSISTOR

Abstract: class A push pull power amplifier 150w FLL1500IU-2C FLL1500 Fujitsu GaAs FET application note push pull class AB RF linear 1.3 GHz 4433b IMT-2000 push pull class AB RF linear S110 transistor
Contextual Info: FUJITSU APPLICATION NOTE - No 004 150-W, 2.11- 2.17 GHz Push-Pull Amplifier For IMT-2000 BaseStation Application Using The FLL1500IU-2C GaAs FET Device FEATURES • Targeted WCDMA ACPR at 20W average • Easy tuning for Power, WCDMA ACPR, and IMD • Over 150 Watts Pout over entire band

0 281 002 924

Abstract: 8 F 804 FUJITSU SEMICONDUCTOR phemt power amplifier mmic
Contextual Info: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology

fujitsu power amplifier GHz

Contextual Info: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology

FUJITSU SEMICONDUCTOR phemt

Abstract: FMM5806X fujitsu power amplifier GHz power amplifier mmic
Contextual Info: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology

fujitsu power amplifier GHz

Abstract: power amplifier mmic
Contextual Info: FMM5802X 27.5-31.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 25.5dBm Typ. High Gain: G1dB = 9dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 27.5-31.5 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology

cq 949

Abstract: fujitsu power amplifier GHz fujitsu phemt FUJITSU RF 053
Contextual Info: FMM5802X 27.5-31.5GHz Power Amplifier MMIC FEATURES • High Output Power: P ^ b = 25.5dBm Typ. • High Gain: G ^ b = 9dB (Typ.) • High PAE: riadd = 20% (Typ.) • Wide Frequency Band: 27.5-31.5 GHz

Contextual Info: FMM5804X 17.5-31.5GHz Power Amplifier MMIC FEATURES • Output Power: P id B : 23.0dBm (Typ.) • High Gain: ( G ^ b ): 18dB (Typ.) • High PAE: riadd = 18% (Typ.) •;■ * ,iq'-4 ‘; .*■' 1; 1TH '-W S *. .•xJ1 ' ji l * ■ ! > : , ! J 9 ■ L 1

FMM5804X

Abstract: fujitsu power amplifier GHz
Contextual Info: FMM5804X 17.5-31.5GHz Power Amplifier MMIC FEATURES • Output Power: P1dB : 23.0dBm (Typ.) • High Gain: (G1dB): 18dB (Typ.) • High PAE: ηadd = 18% (Typ.) • Wide Frequency Band: 17.5-31.5 GHz • Impedance Matched Zin/Zout = 50Ω • 0.25µm PHEMT Technology

Contextual Info: FMM5052ZE 0.8-2.7GHz Power Amplifier MMIC FEATURES ・Wide Frequency Band : 0.8 to 2.7GHz ・Medium Power : P1dB=26dBm Typ. @ f=0.8-2.7GHz ・High Linear Gain : GL=19dB(Typ.) @ f=0.8-2.7GHz ・Impedance Matched Zin/Zout=50Ω ・Wide Operating Temperature Range

s29gl032n90

Abstract: MB15H121 S29GL064N90 s29gl256p90 S29GL01GP13 S29GL128P90 MB86A20 S29AL008J55 S29AL016J55 s29gl128p11
Contextual Info: covPG00-00071e.fm 1 ページ ２００７年５月１０日 木曜日 午前１１時２９分 For further information please contact: Japan FUJITSU LIMITED Electronic Devices Business Unit Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku,

S29JL032H70

Contextual Info: FUJITSU MICROELECTRONICS PRODUCT GUIDE 2009.10 Product Guide [ ASSP•Memory•ASIC ] PG00-00091-3E Technical Documentation of Electronic Devices DATA BOOK PRODUCT GUIDE DVD (GENERAL) DATA SHEET MANUAL FUJITSU SEMICONDUCTOR DATA SHEET Semiconductor Data Book

Fujitsu GaAs FET Amplifier

Abstract: FLL2400IU-2C Fujitsu GaAs FET Amplifier design
Contextual Info: FLL2400IU-2C L-Band High Power GaAs FET FEATURES • • • • Push-Pull Configuration High Power Output: 240W Typ. Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL2400IU-2C is a 240 Watt GaAs FET that employs a push-pull design that

converter dc-dc 24v to 12v tl494

Abstract: MB39A134/MB39A132A MB39A136
Contextual Info: FUJITSU SEMICONDUCTOR LIMITED Power Management ICs Nomura Fudosan Shin-yokohama Bldg. 10-23, Shin-yokohama 2-Chome, Kohoku-ku Yokohama Kanagawa 222-0033, Japan Tel: +81-45-415-5858 http://jp.fujitsu.com/fsl/en/ For further information please contact: North and South America

TL494 car charger schematic diagram

Abstract: tl494 buck dc/dc converter Buck converter with tl494 mb39a118 car power inverter TL494 MB39A129 converter dc-dc 24v to 12v tl494 schematic diagram inverter lcd monitor fujitsu MB39A132 mb39a116
Contextual Info: Power Management ICs FUJITSU MICROELECTRONICS LIMITED Shinjuku Dai-Ichi Seimei Bldg., 7-1, Nishishinjuku 2-chome, Shinjuku-ku, Tokyo 163-0722, Japan Tel: +81-3-5322-3347 Fax: +81-3-5322-3387 http://jp.fujitsu.com/fml/en/ For further information please contact:

data acquisation system

Abstract: MB87L2250 DVB demodulator MB87J217A "channel estimation"
Contextual Info: Product Data Sheet February 2001 Edition 1.0 MB87J217A DVB Terrestrial COFDM Demodulator OVERVIEW The MB87J217A is Fujitsu’s second generation DVB-T ETS / EN 300 744 compliant integrated COFDM Demodulator and Forward-Error-Corrector. Fujitsu, a leading company in CMOS

Fmm5046vf

Abstract: 0503 10MHZ J250100
Contextual Info: FMM5046VF GaAs MMIC FEATURES • • • • High Output Power: 36dBm typ. High Linear Gain: 30dB (typ.) Low Input VSWR Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5046VF is a MMIC amplifier designed for PCS/PCN and W-CDMA applications as a driver or output stage in the

Contextual Info: FMM5046VF GaAs MMIC FEATURES • • • • High Output Power: 36dBm typ. High Linear Gain: 30dB (typ.) Low Input VSWR Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5046VF is a MMIC amplifier designed for PCS/PCN and W-CDMA applications as a driver or output stage in the

FLL810IQ-4C

Contextual Info: FLL810IQ-4C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design

FLL810IQ-3C

Abstract: Fujitsu GaAs FET Amplifier design Fujitsu GaAs FET Amplifier
Contextual Info: FLL810IQ-3C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 50%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-3C is an 80 Watt GaAs FET that employs a push-pull design.

DCS Automation PDF Notes

Abstract: auTOMATION DCS pdf Notes KU SG 2.45 30 A RX-3 BCC-16 FPT-16P-M05 LQFP-48P MB15G000 SSOP-16 SSOP-20
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS06-70105-1E Semicustom Bi-CMOS ASTRO-NT for RF front-end LSI-Based on PLL, Analog Macro MB15G000 Series • DESCRIPTION The ASTRO-NT* is a new technology to correspond to the demand of high performance RF LSI. The technology

MB15H156

Abstract: XTAL_SMD 2bit quantizer XTAL-SMD 3528 pwm 20 PINS transistor+bc+151+equivalent
Contextual Info: January 2005 MB15H156 RTS v1.51.doc Reference Target Specification Fully Integrated GPS RF Downconverter MB15H156 GENERAL DESCRIPTION The MB15H156 GIRAFE GPS Integrated Radio Analog Front End implements a LNA, an image-reject mixer with a RF-AMP, a band pass filter, an AGC, and a fully

OB 2269

Abstract: Gigabit Logic 16G071-10L1E hn 834 Fujitsu APD plcs 1530 16G071-10L1 GIGABIT LOGIC INC "gigabit logic" 16G071-10X
Contextual Info: Ig b lï G ig aB it Logic 16G071 Transimpedance Amplifier 18 dB Gain / 700 MHz Bandwidth FEATURES •High gain > 18 dB • Broad Bandwith: DC to 700 MHz typ. ■Low noise: 3 pAA/Hz typ. for 16G071-30L1 • -35.3 dBm input sensitivity for 10'9 BER @ 1.2 Gbit/s

RV001

Abstract: C4805 BCC-16 FPT-16P-M05 LQFP-48 LQFP-64 MB15G000 SSOP-16 SSOP-20 LQFP64
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS06-70105-3E Semicustom Bi-CMOS ASTRO-NT for RF front-end LSI-Based on PLL, Analog Macro MB15G000 Series • DESCRIPTION The ASTRO-NT* is a new technology to correspond to the demand of high performance RF LSI. The technology

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS06-70105-3E Semicustom Bi-CMOS ASTRO-NT for RF front-end LSI-Based on PLL, Analog Macro MB15G000 Series • DESCRIPTION The ASTRO-NT* is a new technology to correspond to the demand of high performance RF LSI. The technology