FUJITSU RF POWER AMPLIFIER 49 Search Results

FUJITSU MICROWAVE TRANSISTOR

Abstract: Fujitsu GaAs FET application note FLL800IQ-2C 4433B push pull class AB RF linear 1.3 GHz FLL600IQ-3 IMT-2000 understanding thermal basics for microwave power
Contextual Info: FUJITSU APPLICATION NOTE - No 006 80-W, 2.11 – 2.17 GHz Push-Pull Amplifier for IMT-2000 Base Station Application Using the FLL800IQ-2C GaAs FET FEATURES • Targeted WCDMA ACPR at 8W Average Pout • Easy tuning for Power, WCDMA ACPR and IMD • Over 80 Watts Pout over entire band

FUJITSU MICROWAVE TRANSISTOR

Abstract: understanding thermal basics for microwave power FLL600IQ-3 Fujitsu GaAs FET application note 4433B high power fet amplifier schematic mmds passband filter fll600iq ATC 100A 4pF push pull class AB RF linear 1.3 GHz
Contextual Info: FUJITSU APPLICATION NOTE - No 007 60-W, 2.5- 2.7 GHz Push-Pull Amplifier For MMDS Base-Station Application Using The FLL600IQ-3 GaAs FET Device FEATURES • Targeted WCDMA ACPR at 6 W average • Easy tuning for Power, WCDMA ACPR, and IMD • Over 60 Watts Pout over entire band

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS06-70103-1E Semicustom ASTRO MASTER III BIPOLAR Semi-Custom LSI for High Frequency Analog Circuits MB54600 Series • DESCRIPTION ASTRO MASTER III is a semicustom LSI that uses master-slice technology and is suitable for high frequency

FMM5057VF

Abstract: 7.1 power amplifier circuit diagram fujitsu power amplifier GHz Fujitsu Quantum Devices
Contextual Info: FMM5057VF 7.1-8.5GHz Power Amplifier MMIC FEATURES ・High Output Power: 34.0dBm typ. ・High Linear Gain: 26.0dB(typ.) ・Low VSWR ・Broad Band: 7.1～8.5GHz ・Impedance Matched Zin/Zout = 50Ω ・Small Hermetic Metal-Ceramic Package(VF) DESCRIPTION The FMM5057VF is a MMIC amplifier that contains a four-stage

fujitsu power amplifier GHz

Abstract: power amplifier mmic
Contextual Info: FMM5802X 27.5-31.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 25.5dBm Typ. High Gain: G1dB = 9dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 27.5-31.5 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology

cq 949

Abstract: fujitsu power amplifier GHz fujitsu phemt FUJITSU RF 053
Contextual Info: FMM5802X 27.5-31.5GHz Power Amplifier MMIC FEATURES • High Output Power: P ^ b = 25.5dBm Typ. • High Gain: G ^ b = 9dB (Typ.) • High PAE: riadd = 20% (Typ.) • Wide Frequency Band: 27.5-31.5 GHz

Contextual Info: FMM5051VF 13.75-14.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: 31.5dBm typ. High Linear Gain: 31.5dB (typ.) Low Input VSWR Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Small Hermetic Metal-Ceramic Package (VF)

150759

Abstract: 110GHZ
Contextual Info: FMM5051VF 13.75-14.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: 31.5dBm typ. High Linear Gain: 31.5dB (typ.) Low Input VSWR Broad Band: 13.75 ~ 14.5GHz Impedance Matched Zin/Zout = 50Ω Small Hermetic Metal-Ceramic Package (VF)

584 MMIC

Abstract: fujitsu power amplifier GHz fujitsu x band amplifiers power amplifier mmic
Contextual Info: FMM5803X 27.5-31.5GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 30dBm Typ. High Gain: G1dB = 14dB (Typ.) High PAE: ηadd = 20% (Typ.) Wide Frequency Band: 27.5-31.5 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology

cofdm transmitter

Abstract: MB87J217A tuner tv if 36MHz tuner if 36MHz automatic gain controller TV demodulator dvbt cofdm transmitter "channel estimation"
Contextual Info: Product Profile February 2001 Edition 2.0 MB87J217A DVB Terrestrial COFDM Demodulator OVERVIEW The MB87J217A is Fujitsu’s second generation DVB-T ETS / EN 300 744 compliant integrated COFDM Demodulator and Forward-Error-Corrector. Fujitsu, a leading company in CMOS

s29gl032n90

Abstract: MB15H121 S29GL064N90 s29gl256p90 S29GL01GP13 S29GL128P90 MB86A20 S29AL008J55 S29AL016J55 s29gl128p11
Contextual Info: covPG00-00071e.fm 1 ページ ２００７年５月１０日 木曜日 午前１１時２９分 For further information please contact: Japan FUJITSU LIMITED Electronic Devices Business Unit Shinjuku Dai-Ichi Seimei Bldg. 7-1, Nishishinjuku 2-chome, Shinjuku-ku,

S29JL032H70

Contextual Info: FUJITSU MICROELECTRONICS PRODUCT GUIDE 2009.10 Product Guide [ ASSP•Memory•ASIC ] PG00-00091-3E Technical Documentation of Electronic Devices DATA BOOK PRODUCT GUIDE DVD (GENERAL) DATA SHEET MANUAL FUJITSU SEMICONDUCTOR DATA SHEET Semiconductor Data Book

Fujitsu GaAs FET Amplifier

Abstract: FLL2400IU-2C Fujitsu GaAs FET Amplifier design
Contextual Info: FLL2400IU-2C L-Band High Power GaAs FET FEATURES • • • • Push-Pull Configuration High Power Output: 240W Typ. Broad Frequency Range: 2100 to 2200 MHz. Suitable for class AB operation. DESCRIPTION The FLL2400IU-2C is a 240 Watt GaAs FET that employs a push-pull design that

converter dc-dc 24v to 12v tl494

Abstract: MB39A134/MB39A132A MB39A136
Contextual Info: FUJITSU SEMICONDUCTOR LIMITED Power Management ICs Nomura Fudosan Shin-yokohama Bldg. 10-23, Shin-yokohama 2-Chome, Kohoku-ku Yokohama Kanagawa 222-0033, Japan Tel: +81-45-415-5858 http://jp.fujitsu.com/fsl/en/ For further information please contact: North and South America

fmm5049

Abstract: FMM5049VT mmic case styles 28492
Contextual Info: FMM5049VT Power Amplifier MMIC FEATURES • • • • High Output Power: Pout = 41.0dBm Typ. High Linear Gain: GL = 33.0dB (Typ.) Broad Band: 1.8 to 2.3GHz Hermetically Sealed Package DESCRIPTION The FMM5049VT is a high-gain, wide band, three-stage MMIC

data acquisation system

Abstract: MB87L2250 DVB demodulator MB87J217A "channel estimation"
Contextual Info: Product Data Sheet February 2001 Edition 1.0 MB87J217A DVB Terrestrial COFDM Demodulator OVERVIEW The MB87J217A is Fujitsu’s second generation DVB-T ETS / EN 300 744 compliant integrated COFDM Demodulator and Forward-Error-Corrector. Fujitsu, a leading company in CMOS

Fmm5046vf

Abstract: 0503 10MHZ J250100
Contextual Info: FMM5046VF GaAs MMIC FEATURES • • • • High Output Power: 36dBm typ. High Linear Gain: 30dB (typ.) Low Input VSWR Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5046VF is a MMIC amplifier designed for PCS/PCN and W-CDMA applications as a driver or output stage in the

Contextual Info: FMM5046VF GaAs MMIC FEATURES • • • • High Output Power: 36dBm typ. High Linear Gain: 30dB (typ.) Low Input VSWR Small Hermetic Metal-Ceramic Package (VF) DESCRIPTION The FMM5046VF is a MMIC amplifier designed for PCS/PCN and W-CDMA applications as a driver or output stage in the

FLL810IQ-4C

Contextual Info: FLL810IQ-4C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 45%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-4C is an 80 Watt GaAs FET that employs a push-pull design

FLL810IQ-3C

Abstract: Fujitsu GaAs FET Amplifier design Fujitsu GaAs FET Amplifier
Contextual Info: FLL810IQ-3C L-Band High Power GaAs FET FEATURES • • • • • • Push-Pull Configuration High Power Output: 80W High PAE: 50%. Excellent Linearity Suitable for class AB operation. Hermetically Sealed Package DESCRIPTION The FLL810IQ-3C is an 80 Watt GaAs FET that employs a push-pull design.

DCS Automation PDF Notes

Abstract: auTOMATION DCS pdf Notes KU SG 2.45 30 A RX-3 BCC-16 FPT-16P-M05 LQFP-48P MB15G000 SSOP-16 SSOP-20
Contextual Info: To Top / Lineup / Index FUJITSU SEMICONDUCTOR DATA SHEET DS06-70105-1E Semicustom Bi-CMOS ASTRO-NT for RF front-end LSI-Based on PLL, Analog Macro MB15G000 Series • DESCRIPTION The ASTRO-NT* is a new technology to correspond to the demand of high performance RF LSI. The technology

MB8264

Abstract: FPT-80P-M01
Contextual Info: April 1991 Edition 1.0 FUJITSU D A TA SH EET MB87045 VIDEO DRAM CONTROLLER The video controller MB87045 controls general purpose DRAM to store one composite video signal field. The serial-parallel converter circuit in the controller processes the digitized video signal sampling frequency: 3 fsc = 10.7 MHz from a

Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS06-70105-3E Semicustom Bi-CMOS ASTRO-NT for RF front-end LSI-Based on PLL, Analog Macro MB15G000 Series • DESCRIPTION The ASTRO-NT* is a new technology to correspond to the demand of high performance RF LSI. The technology

MB39C326

Abstract: WLP 1500
Contextual Info: FUJITSU SEMICONDUCTOR DATA SHEET DS405-00001-1v0-E ASSP for Power Supply Applications 6MHz Synchronous Rectification Buck-Boost DC/DC Converter IC MB39C326  DESCRIPTION The MB39C326 is a high efficiency, low noise synchronous, Buck-boost DC/DC converter designed for