FUJITSU SEMICONDUCTOR PHEMT Search Results
FUJITSU SEMICONDUCTOR PHEMT Result Highlights (5)
Part | ECAD Model | Manufacturer | Description | Download | Buy |
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SCL3400-D01-004 | Murata Manufacturing Co Ltd | 2-axis (XY) digital inclinometer |
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SCC433T-K03-PCB | Murata Manufacturing Co Ltd | 2-Axis Gyro, 3-axis Accelerometer combination sensor on Evaluation Board |
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SCC433T-K03-10 | Murata Manufacturing Co Ltd | 2-Axis Gyro, 3-axis Accelerometer combination sensor |
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SCC433T-K03-004 | Murata Manufacturing Co Ltd | 2-Axis Gyro, 3-axis Accelerometer combination sensor |
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MRUS74SK-001 | Murata Manufacturing Co Ltd | Magnetic Sensor |
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FUJITSU SEMICONDUCTOR PHEMT Datasheets Context Search
Catalog Datasheet | Type | Document Tags | |
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FMM5805XContextual Info: FMM5805X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31.0dBm Typ. High Gain: G1dB = 21.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5805X is a high-gain, high power, 3-stage MMIC |
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FMM5805X 5-20GHz FMM5805X the17 FCSI0699M200 | |
584 MMIC
Abstract: fujitsu power amplifier GHz fujitsu x band amplifiers power amplifier mmic
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FMM5803X 30dBm FMM5803X FCSI0200M200 584 MMIC fujitsu power amplifier GHz fujitsu x band amplifiers power amplifier mmic | |
fujitsu power amplifier GHz
Abstract: FMM5805
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FMM5805X 5-20GHz FMM5805X the17 FCSI0699M200 fujitsu power amplifier GHz FMM5805 | |
Contextual Info: FMM5805X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31.0dBm Typ. High Gain: G1dB = 21.0dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5805X is a high-gain, high power, 3-stage MMIC |
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FMM5805X 5-20GHz FMM5805X the17 FCSI0699M200 | |
0 281 002 924
Abstract: 8 F 804 FUJITSU SEMICONDUCTOR phemt power amplifier mmic
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FMM5806X 26dBm FMM5806X FCSI0699M200 0 281 002 924 8 F 804 FUJITSU SEMICONDUCTOR phemt power amplifier mmic | |
DC TO 20GHZ RF AMPLIFIER MMIC
Abstract: fujitsu power amplifier GHz MMIC AMPLIFIER 6-20 GHZ
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FMM5815X 5-20GHz 31dBm FMM5815X the17 FCSI0601M200 DC TO 20GHZ RF AMPLIFIER MMIC fujitsu power amplifier GHz MMIC AMPLIFIER 6-20 GHZ | |
fujitsu power amplifier GHzContextual Info: FMM5806X 24-27.0GHz Power Amplifier MMIC FEATURES • • • • • • High Output Power: P1dB = 26dBm Typ. High Gain: G1dB = 9.5dB (Typ.) High PAE: ηadd = 25% (Typ.) Wide Frequency Band: 24.0-27.0 GHz Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology |
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FMM5806X 26dBm FMM5806X FCSI0699M200 fujitsu power amplifier GHz | |
Contextual Info: FMM5815X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31dBm Typ. High Gain: G1dB = 21dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5815X is a high-gain, high linearity, 3-stage MMIC |
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FMM5815X 5-20GHz 31dBm FMM5815X the17 FCSI0601M200 | |
fujitsu power amplifier GHz
Abstract: FMM5807X FUJITSU SEMICONDUCTOR phemt
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FMM5807X 21-27GHz 30dBm FMM5807X 21-27GHz FCSI0500M200 fujitsu power amplifier GHz FUJITSU SEMICONDUCTOR phemt | |
FUJITSU SEMICONDUCTOR phemt
Abstract: FMM5806X fujitsu power amplifier GHz power amplifier mmic
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FMM5806X 26dBm FMM5806X FCSI0699M200 FUJITSU SEMICONDUCTOR phemt fujitsu power amplifier GHz power amplifier mmic | |
Contextual Info: FMM5815X 17.5-20GHz Power Amplifier MMIC FEATURES • • • • • High Output Power: P1dB = 31dBm Typ. High Gain: G1dB = 21dB (Typ.) High PAE: ηadd = 30% (Typ.) Impedance Matched Zin/Zout = 50Ω 0.25µm PHEMT Technology DESCRIPTION The FMM5815X is a high-gain, high linearity, 3-stage MMIC |
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FMM5815X 5-20GHz 31dBm FMM5815X the17 FCSI0601M200 | |
fujitsu power amplifier GHz
Abstract: power amplifier mmic
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FMM5802X FMM5802X FCSI0599M200 fujitsu power amplifier GHz power amplifier mmic | |
fujitsu power amplifier GHz
Abstract: UM 2200 power amplifier mmic
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FMM5807X 21-27GHz 30dBm FMM5807X 21-27GHz FCSI0500M200 fujitsu power amplifier GHz UM 2200 power amplifier mmic | |
FUJITSU SEMICONDUCTOR phemt
Abstract: mmic case styles power amplifier mmic
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FMM5815GJ-1 31dBm FMM5815GJ the17 FCSI0402M200 FUJITSU SEMICONDUCTOR phemt mmic case styles power amplifier mmic | |
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FMM5811GJ-1
Abstract: FMM5811 power amplifier mmic
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FMM5811GJ-1 FMM5811GJ-1 FCSI0101M200 FMM5811 power amplifier mmic | |
FMM5804X
Abstract: fujitsu power amplifier GHz
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FMM5804X FMM5804X FCSI0599M200 fujitsu power amplifier GHz | |
cq 949
Abstract: fujitsu power amplifier GHz fujitsu phemt FUJITSU RF 053
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FMM5802X FMM5802X FCSI0599M200 cq 949 fujitsu power amplifier GHz fujitsu phemt FUJITSU RF 053 | |
Contextual Info: FMM5804X 17.5-31.5GHz Power Amplifier MMIC FEATURES • Output Power: P id B : 23.0dBm (Typ.) • High Gain: ( G ^ b ): 18dB (Typ.) • High PAE: riadd = 18% (Typ.) •;■ * ,iq'-4 ‘; .*■' 1; 1TH '-W S *. .•xJ1 ' ji l * ■ ! > : , ! J 9 ■ L 1 |
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FMM5804X FCSI0599M200 | |
Ericsson 600 rt dish
Abstract: telephone drop-wire Ericsson microwave dish qualcomm 801 c-band microwave transmitter philips pe 2480 Ericsson microwave commissioning SIEMENS MICROWAVE RADIO mesfet lnb Nokia SAT 820 S
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SIEMENS MICROWAVE RADIO
Abstract: mesfet lnb raytheon downconverter Ericsson microwave commissioning ESP car stability LED light chase raytheon dbs Nortel Networks Power Amplifier MMIC 2.6 GHz 10 gb laser diode
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siliconix vmp4
Abstract: irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet
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99CH36282C. KE67VWU, siliconix vmp4 irf540 27.12 MHz Siemens MTT 95 A 12 N class e power amplifier IRF510 SEC RF NPN POWER TRANSISTOR 5 WATT 2.4 GHZ IRF540 mosfet with maximum VDS 30 V VMP4 Class E amplifier IRF510 SEC mosfet | |
Avago 9886
Abstract: XFRV NE3210 FR4 substrate height and thickness rogers fll120 SKD-ONS-ST23-001 BFP949 Rohm Diodes
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com/peixun/antenna/116 //shop36920890 Avago 9886 XFRV NE3210 FR4 substrate height and thickness rogers fll120 SKD-ONS-ST23-001 BFP949 Rohm Diodes | |
PIC16F72 inverter ups
Abstract: UPS inverter PIC16F72 PIC16F676 inverter hex code 16F877 with sd-card and lcd project circuit diagram wireless spy camera NH82801GB xmega-a4 online ups service manual back-ups ES 500 ARM LPC2148 INTERFACING WITH RFID circuit diagram realtek rtd 1186
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element-14 element14. element14, PIC16F72 inverter ups UPS inverter PIC16F72 PIC16F676 inverter hex code 16F877 with sd-card and lcd project circuit diagram wireless spy camera NH82801GB xmega-a4 online ups service manual back-ups ES 500 ARM LPC2148 INTERFACING WITH RFID circuit diagram realtek rtd 1186 | |
Arduino Mega2560
Abstract: 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l
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CY8C38 CY8C29 incl795 12T9797 12T9804 12T9803 12T9800 12T9802 12T9801 12T9805 Arduino Mega2560 13001 S 6D TRANSISTOR arduino uno rev 3 agilent optical encoder 9988 MZ 13001 TRANSISTOR arduino mega 2650 skiip 613 gb 123 ct arduino sound sensor module pic arduino nano mc34063l |