FYP 35 Search Results

31A26

Abstract: 16245
Contextual Info: PRELIMINARY fyP E R IC O M PI3B16245 PI3B162245 250 3.3V, Hot Insertion, 16-Bit, 2-Port BusSwitch Product Description:

74HC7046A

Contextual Info: New Data CD54/74HC7046A CD54/74HCT7046A pciouT Old PC2QUT •2CS-41204 FUNCTIONAL DIAGRAM File Number 1 9 2 0 Phase-Locked Loop with VCO And Lock Detector Type Feature«: • Center frequency of 18 MHz fyp. at Vcc = 5 V • Choice o f two phase comparators:

HT7251

Abstract: HT72XX HT7231 24V to 15V REGULATOR IC HT7230 HT7233 HT7234 HT7245 HT7246 HT7250
Contextual Info: HDLTEK r r HT72XX General Purpose Regulator Features Low power consumption Low voltage drop Low tem perature coefficient High input voltage up to 24V High output current: 100mA (Pj 250mW) TO-92 package Applications Audio/Video equipment Battery-powered equipment

Contextual Info: HDLTEK r r HT78XX High Driver Regulator Features • Low power consumption • Low voltage drop • Low temperature coefficient • High input voltage up to 12V • High output current: 100mA (Pj < 250mW) . TO-92/SOT-89 package Applications • Audio/Video equipment

470uA

Abstract: ZBB65W
Contextual Info: SUNLED CORPORATION 20793 E. VALLEY BLVD. #C SUNLED WALNUT.CA.91789, U.S.A. E-MAIL: sales@sunled.com URL ADDRESS: http://www.sunled.com ZBB65W 2.1X0.7mm RIGHT ANGLE SURFACE LED S’ 8 ISc> - æ - / Q.35[0.014] 2.10Î0.083] i CATHODE MARK 1.410.055] R0.5010.02J

Contextual Info: LiEiy Q T1 % 5mm MULTICHIP LEDs 0I 6-C H IP 160* W IDE ANGLE ILLUMINATORS (LO W PROFILE) FEATU RES LEDTRONICS PART NO. T 1 34 LEMS COLOR LED COLOR (5 m n rl) L E D s 6 C l I I P , 3 L206CR7B-3.5V ULTRA RED I NEW I NEW Pd mW Kp mA IrMAX pA \P nm 3 .4 /4 .0

HT9170C

Abstract: HT9170D ht9170 dtmf decoder HT9170 HT9170B HT9170A HT9170E block diagram of ht9170
Contextual Info: hWLTEK HT9170 DTMF Receiver Features • • • • O perating voltage: 2.5V-5.5V M in im al external components No external filte r is required Low standby current on power down mode • • • • Excellent performance T ristate data output for |_iC interface

Contextual Info: tSe.mi-Conciu.cko'i ^Pioducti, 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. MJE3439 NPN Silicon High-Voltage Power Transistors 0.3 AMPERE POWER TRANSISTOR NPN SILICON 350 VOLTS 15 WATTS . . . designed for use in line-operated equipment requiring high ff.

Contextual Info: 32K X 32 SRAM MODULE mosaic semiconductor, inc. PUMA 2S1000 - 020/025/35/45 11403 West Bernado Court, Suite 100, San Diego, CA 92127. Tel No: 619 674 2233, Fax No: (619) 674 2230 Issue 4.3 : N o vem b er 1998 Description 1,048,576 bit CMOS High Speed Static RAM

1MBI600S-120

Contextual Info: This material and tie ‘nhrmation herein 3s (he properly cf Fcji Electric Ca.UcJJhcy shall be nelihor nproducoa, copied. Icti. or disclosed n any wav whatsoever (or the use of any third psny.nc: used (or the manufacturing purposes without fha expross wtlncn consem of Fuji Siectrlc Co. Lid.

Contextual Info: H B LTE K f V H T1623 RAM Mapping 4 8 x8 LCD Controller for I/O illC Features • • • • • • • • • • • • O perating voltage: 2.7V-5.2V B uilt-in RC oscillator E xtern al 32.768kHz crystal or 32kHz frequency source in p u t 1/4 bias, 1/8 duty, fram e frequency is 64Hz

Contextual Info: T EKELEC / b&E COMPONENTS D TQD37fl7 DGDGmb TSL. max units DOUBLE BALANCED MIXERS / Package Type Model n F56 665 - 01 F56 66 5-00 A Relay Header Frequency range BMH 158 RF LO 0,5 - 500 MHz IF DC - 500 MHz LO Level 7 dBm Temperature range -55 / 100'C min

transistor ZA 16

Abstract: BUZ11 IEC134 T0220AB
Contextual Info: N AMER P H I L I P S / D I S C R E T E QbE d PowerMOS transistor • b 353^31 D o m 3 aa 1 " BUZ11 r - 3 ^ 1! May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies

Contextual Info: 3SE D • ñ23b35Q ÜQlbSö^ Ô « S IP Silicon Switching Diode SIEMENS/ SMBD 914 SPCLi SEMICONDS _ T ~ C Z - 0 ? • For high-speed switching applications Type Marking SMBD 914 S5D Ordering code for versions in bulk Q68000-A6418 Ordering code for

Contextual Info: f w > ' $ - O c! Silicon Switching Diode Array _ 32E D • B A S 28 Ô23b320 GQlbSDb G « S I P SIEMENS/ SPCLi SEMICONDS • For high-speed switching • Electrically Isolated diodes Type Marking Ordering code for versions In bulk Ordering code for versions on 8 mm-tape

Contextual Info: 1.8" B i-C o lo r S in g le D ig it D is p la y FEA TU R E S - 1.8" digit height • Right hand decimal point ■ Grey surface/white epoxy color OPTO-ELECTRICAL CHARACTERISTICS Ta = 25°C MAXIMUM RATINGS OPTO-ELECTRtCAL CHARACTERISTICS VR PD (mAt (Vi (mW)

Contextual Info: REVISIONS ZONE LTR E C A t A & 343EÛ c . 3 4 4 2 .2 . UNINSULATED W IRES USED IN TH /5 A S S E M B L Y . MUST P A S S 6 0 0 V O LT* H I - POT AFTER P O T T IN G D ESC R IP TIO N DATE R E L E A S E F # R p r o d u c t i o n r .C ! l / i r f t s ¿? E N £ i^iL v r p /ir s r ¿ ¿ e r r .o fJ .

IM7805

Abstract: LT 7805 7805 T03 lm 7805 n L78I5 tm 2312 ln 7805 MC7805 UA7805 UC7905
Contextual Info: Power Managem ent Division Power M anagem ent Division cross reference - linear products T 0 3 9 H T h e fo llo w in g ta b le p ro v id e s a su m m ary o f or com parable parts. H o w e ve r, the list is b y no S e m e la b part n u m b e rs ag ain st those o f o th e r

Contextual Info: CLA and CLB THIN-FILMI The CLA and CLB resistor arrays are the hybrid equivalent to the eight resistor common connection and isolated networks available in sips or dips. The resistors are spaced on 10 mil centers resulting in minimal space requirements. These chips are manufactured using state-of-the-art thin-film techniques, are 100%

Contextual Info: HL8312E/G GaAIAs LD HITACHI/ OPTOELECTRONICS Description S4E T> I 4 4 ^ 2 0 5 G0120b7 «Him -4 1 - o s The HL8312E/G are high-power 0.8 pm band GaAIAs laser diodes with a double heterojunction structure. They are suitable as light sources for optical disk memories and various other types of optical equipment

FYP35

Abstract: FYP 35 3DD5D
Contextual Info: Frequency D oublers 500 Surface Mounts H igh Harm onic R ejectio n 5 kHz to 3000 MHz SURFACE MOUNT mmma MHz RF INPUT PWR. dBm CONVERSION LOSS * HARMONIC CAPD DATA OUTPUT, d fic i i i i i i i i i i i i i i i i i i i i i i CASE STYLE C <3 W tt £ PRICE iilllil

Contextual Info: Dual Channel High Speed Hermetically Sealed Ceramic Optocoupler Isocom Ltd supplies high reliability devices for applications requiring an operating tem­ perature range of -55°C to +125°C e.g. military applications . Devices supplied have completed rigorous

2SB206

Contextual Info: E D T2 ANSI # 2 & # 3 Telephone Slide Based LEDs * Miniature Packages Replaces Incandescent 660nm Ultra Red GaAIAs/GaAIAs 24E.24X 48A.D.C 612nm Super Orange InGaAlP 24E.24X 48A,D,C 2SBF200 595nm Super Yellow InGaAlP 24E.24X 48A.D.C 8000K Cool White SiC/GaN

1J54

Abstract: SI-4Q040
Contextual Info: PORTS 2,3 & 4 IQOOpF ; 2K V PORT 1 Irt \r o/ P7j J/ Jo (Pf if (p4Ì \y (po) J4n ( p i) 11 (p?) N f lT F S 1,0 P IN S WITHDUT E L E C T R IC A L C D N N E C T ID N ARE DM ITTED, InNet T e c h n o l o g i e s httpi//*iwiv.lnnet-'tech.con Inc. Siewart C onnecior System s