FZT649 Search Results

transistor smd 6a

Abstract: 6a smd transistor smd transistor 2A smd transistor marking br TRANSISTOR SMD 1a 9 FZT649
Contextual Info: Transistors SMD Type NPN Silicon Planar High Performance Transistor FZT649 SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 25 Volt VCEO. 3 Amp continuous current. +0.1 3.00-0.1 +0.15 1.65-0.15 Features Unit: mm +0.2 0.90-0.2 +0.3 7.00-0.3 Low saturation voltage.

Contextual Info: July 1998 FZT649 C B C E SOT-223 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* TA = 25°C unless otherwise noted FZT649 Units

Contextual Info: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT649 ISSU E 4 - FEBRUARY 1996_ FEATURES * 25 Volt VCE0 * 3 Am p continuous current * Low saturation voltage * Excellent hFE specified up to 6A CO M PLEM EN TA RY T Y P E - FZT749 PARTM ARKING D E T A IL -

Contextual Info: Product specification FZT649 SOT-223 +0.2 3.50-0.2 0.1max +0.05 0.90-0.05 +0.2 6.50-0.2 25 Volt VCEO. 3 Amp continuous current. +0.1 3.00-0.1 +0.15 1.65-0.15 Features Unit: mm +0.2 0.90-0.2 +0.3 7.00-0.3 Low saturation voltage. 4 Excellent hFE specified up to 6A.

fzt649

Contextual Info: July 1998 FZT649 C B C E SOT-223 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* TA = 25°C unless otherwise noted FZT649 Units

MPSA92(KSP92) equivalent

Abstract: BC214L equivalent MMBT3646 ss8550 TN6727A SS8050 KSP2222A equivalent MMBT5771 MPSA18 BC550 BC369
Contextual Info: Discrete Small Signal General Purpose Products VCEO V VCBO (V) VEBO (V) IC hFE Saturation Voltage Max (A) Min Max @VCE (V) @IC (mA) VCE (sat) (V) @IC (mA) @IB (mA) SOT-223 NPN Configuration BCP68 20 30 5 1 85 375 1 500 0.5 1 100 FZT649 25 35 5 3 100 300

REVB

Abstract: FZT649
Contextual Info: July 1998 FZT649 C B C E SOT-223 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* TA = 25°C unless otherwise noted FZT649 Units

Contextual Info: S E M I C D N D U C T D H tm J u ly 1998 FZT649 C - B SOT-223 NPN Low S aturation T ransistor These devices are designed with high current gain and low saturatior voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* FZT649 Units Collector-Em itter Voltage

Contextual Info: FZT649 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)35 I(C) Max. (A)3 Absolute Max. Power Diss. (W)2 Maximum Operating Temp (øC)150 I(CBO) Max. (A)100n @V(CBO) (V) (Test Condition)30 h(FE) Min. Current gain.100 h(FE) Max. Current gain.300

Contextual Info: SOT223 PNP SIUCON PLANAR MEDIUM POWER TRANSISTOR ISSUE 4 -NOVEMBER 1995 _ FEATURES * 25 Volt V CEO * 3 Amp continuous current * Low saturation voltage * Excellent hFE specified up to 6A (pulsed . COMPLEMENTARY TYPE PARTMARKING DETAIL- FZT649 FZT749

Contextual Info: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR 200 0.8 FZT649 ISSUE 4– FEBRUARY 1996 FEATURES * 25 Volt VCEO * 3 Amp continuous current * Low saturation voltage * Excellent hFE specified up to 6A V + -=2V C E 0.6 COMPLEMENTARY TYPE – I+ /I* =10 0.4

FZT649

Abstract: FZT749 transistor FZT749
Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR FZT749 TYPICAL CHARACTERISTICS td tr 1.8 tf IB1=IB2=IC/10 ns ts 1.2 1.0 0.8 V 0.6 IC/IB=100 140 ns 1200 120 1000 100 COMPLEMENTARY TYPE – PARTMARKING DETAIL – ts 60 40 0.2 200 tr 0.01 0.1 1 10 E FZT649 FZT749

FZT649

Abstract: FZT749 DSA003675
Contextual Info: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT649 TYPICAL CHARACTERISTICS 200 0.8 - Gain I+ /I* =10 0.4 COMPLEMENTARY TYPE – PARTMARKING DETAIL – V E C FZT749 FZT649 ABSOLUTE MAXIMUM RATINGS. 0.2 0.01 0.1 1 20 0.001 10 0.01 0.1 1 IC - Collector Current Amps

FZT649

Contextual Info: SOT223 PNP SIUCON PLANAR M EDIU M POWER TRANSISTOR ISSUE 4 - NOVEM BER 1995_ FEAT U RES * * * 25 V olt V CE0 3 A m p continuous current Low saturation voltage * Excellent hFE specified up to 6 A pulsed , C O M P L E M E N T A R Y TYPE - FZT649 PARTM ARKIN G DETAIL -

FZT649

Abstract: sot223 transistor fairchild NPN 3A
Contextual Info: S E M IC O N D U C T O R July 1998 FZT649 S O T -2 2 3 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. A b s o lu t e M a x im u m R a t in g s * Symbol

Contextual Info: A Product Line of Diodes Incorporated Green FZT649 25V NPN HIGH PERFORMANCE TRANSISTOR IN SOT223 Features Mechanical Data •          BVCEO > 25V IC = 3A High Continuous Current ICM = 8A Peak Pulse Current Low Saturation Voltage VCE sat < 300mV @ 1A

c 1246

Abstract: fzt649 CBVK741B019 F63TNR F852 PN2222A On semiconductor date Code sot-223 transistor pn2222a 01246
Contextual Info: July 1998 FZT649 C B C E SOT-223 NPN Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. Absolute Maximum Ratings* TA = 25°C unless otherwise noted FZT649 Units

transistor c 3205

Abstract: 3205 ic
Contextual Info: SOT223 NPN SILICON PLANAR HIGH PERFORMANCE TRANSISTOR FZT649 IS S U E 4 - FEBRUARY 1996_ FEATURES * * 25 Volt VCE0 3 A m p continuous current * Low saturation voltage * Excellent hFE specified up to 6A C O M P L E M E N T A R Y TYPE -

Contextual Info: SOT223 PNP SILICON PLANAR MEDIUM POWER TRANSISTOR td tr 1.8 tf IB1=IB2=IC/10 ns 1.6 VCE=-10V 160 1.4 ts 140 ns 1.2 1200 120 1.0 1000 100 0.8 tr td 20 IC/IB=10 0.001 0.01 0.1 1 10 C ABSOLUTE MAXIMUM RATINGS. 40 200 E FZT649 FZT749 B IC/IB=100 0.2 C tf 60 600

FZT649

Abstract: HIP6521 HIP6521CB HIP6521EVAL1 HUF76129D3S TB363 TB379
Contextual Info: HIP6521 TM Data Sheet August 2000 File Number 4837.1 PWM and Triple Linear Power Controller Features The HIP6521 provides the power control and protection for four output voltages in high-performance microprocessor and computer applications. The IC integrates a voltagemode PWM controller and three linear controllers, as well as

panasonic diode

Abstract: ISL6528 ISL6528CB ISL6528CB-T ISL6528EVAL1 TB363 TB379 AN9982 mosfet 4813
Contextual Info: ISL6528 TM Data Sheet February 2002 Dual Regulator - Standard Buck PWM and Linear Power Controller Features The ISL6528 provides the power control and protection for two output voltages in high-performance graphics cards and other embedded processor applications. The dual-output

ST TSSOP Marking

Contextual Info: SC2463 High Performance Quad Output Switching Regulator POWER MANAGEMENT Description Features The SC2463 is a high performance controller for multioutput converters that can be configured for a wide variety of applications. The SC2463 utilizes PWM synchronous buck topologies where efficiency is most important.

NPN SOT23-6

Abstract: ZDT1049 DUAL NPN SOT23-6 zdt6790 fzt849 WDFN3 BCP6825 ZXTBM322 sot223 transistor sot23
Contextual Info: Zetex Device BCP6825 BCP6925 BCV27 BCW66H BCW68H BCX17 BCX19 BCX6825 BCX6916 BCX6925 FCX1047A FCX1051A FCX1147A FCX1149A FCX1151A FCX491A FCX589 FCX591A FCX617 FCX619 FCX688B FCX690B FCX717 FCX718 FCX789A FCX790A FMMT449 FMMT489 FMMT491A FMMT549 FMMT549A FMMT589

10uH inductor CC TECHNOLOGIES

Abstract: APA150 -TQ1001 datasheet AX2000 ISL6528 HSOP-28 thermal Actel APA075 ax rubycon capacitor 106 35K 7 pin str for 24v 3 amp to 220 package APA600
Contextual Info: HIGH PERFORMANCE ANALOG Power Management Application Guide for Actel FPGAs Using Switchers to Power Actel FPGAs FPGAs continue to grow in density and complexity while at the same time, shrinking device geometries have enabled faster system clocks and required lower core voltages. These trends call for more