G T MARKING SOT323 Search Results

marking code p07 sot89

Abstract: marking code 3Fp P1M marking code sot 223 PDTC* MARKING CODE p04 sot223 FtZ MARKING CODE T07 marking P2F SOT23 marking t04 sot23 marking code P1F
Contextual Info: MARKING CODES Page T y p e n u m b e r to m arking c o d e c ro s s re fe re n ce 68 M ark in g co d e to type n u m b er c ro s s re fe re n ce 74 Philips Semiconductors Small-signal Transistors Marking codes TYPE NUMBER TO MARKING CODE TYPE NUMBER I MARKING

MARKING CODE TBD

Contextual Info: v G en eral S e m ic o n d u c t o r % _GTF701 T-Filter with TVS Diode Array For EMI Filtering and ESD Protection Mechanical Data Features Case: SOT323-5 leaded package Molding Compound Flammability Rating: UL 94V-0 Marking Code: TBD Packaging: TBD

Marking R1P

Abstract: ROHM SOT89 MARKING MANUFACTURE of code ROHM
Contextual Info: Abbreviated Symbol Markings for Mini-Mold Produce • For SST SOT23 , SMT (SC59), UMT (SOT323) The model name of general small signal transistors is indicated by a two or three letter alphanum eric code string (see figure 1). the model name of digital transistors

Contextual Info: BSS84W P-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features V BR DSS RDS(ON) Package -50V 10Ω VGS = -5V SOT323 ID TA = +25°C -130mA • Low On-Resistance  Low Gate Threshold Voltage  Low Input Capacitance  Fast Switching Speed

BAT54CW

Contextual Info: Preliminary Data Sheet PD-20639 12/01 BAT54CW SCHOTTKY DIODE 0.2 Amp 3 2 Major Ratings and Characteristics Characteristics SOT323 Value Units 0.2 A VRRM 30 V IFSM @ tp= 10 ms sine 1.0 A VF @30mA DC, TJ= 25°C 0.5 V Pd Power Dissipation @ TA = 25°C 200 mW

BAT54SW

Contextual Info: Preliminary Data Sheet PD-20640 12/01 BAT54SW 0.2 Amp SCHOTTKY RECTIFIER 3 2 Major Ratings and Characteristics Characteristics SOT323 Value Units 0.2 A Description/ Features VRRM 30 V IFSM @ tp= 10 ms sine 1.0 A This Schottky barrier double diode is designed for high speed

BAT54W

Contextual Info: Preliminary Data Sheet PD-20641 12/01 BAT54W SCHOTTKY DIODE 0.2 Amp 3 2 Major Ratings and Characteristics Characteristics SOT323 Value Units 0.2 A VRRM 30 V IFSM @ tp= 10 ms sine 1.0 A VF @30mA DC, TJ= 25°C 0.5 V Pd Power Dissipation @ TA = 25°C 200 mW TJ

BAT54AW

Contextual Info: Preliminary Data Sheet PD-20780 12/01 BAT54AW 0.2 Amp SCHOTTKY RECTIFIER 3 2 Major Ratings and Characteristics Characteristics SOT323 Value Units 0.2 A VRRM 30 V IFSM @ tp= 10 ms sine 1.0 A VF @30mA DC, TJ= 25°C 0.5 V Pd Power Dissipation @ TA = 25°C 200

Contextual Info: DTA114EM/EE/EUA/ECA/ESA Taiwan Semiconductor Small Signal Product PNP Digital Transistor FEATURES - Built-in bias resistors enable the configuration of SOT523 /SOT323/SOT23 an inverter circuit without connecting external input resistor see equivalent circuit .

Contextual Info: MMBD2004SW HIGH VOLTAGE SURFACE MOUNT DUAL SWITCHING DIODE Features Mechanical Data • Fast Switching Speed: Maximum of 50ns    High Reverse Breakdown Voltage: 300V Low Leakage Current: Maximum of 100nA when VR = 240V at  Case: SOT323 Case Material: Molded Plastic, "Green" Molding Compound, UL

npn K1M

Abstract: k1+M+1208+Q+switch
Contextual Info: BC846AW-BC848CW NPN SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data • Ideally Suited for Automatic Insertion  Case: SOT323  Complementary PNP Types Available BC856W – BC858W  Case material: molded plastic, “Green” molding compound

Contextual Info: BC846AW-BC848CW NPN SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data • Ideally Suited for Automatic Insertion  Case: SOT323  Complementary PNP Types: BC856W – BC858W  Case material: molded plastic, “Green” molding compound  For Switching and AF Amplifier Applications

k1R transistor

Abstract: npn K1M
Contextual Info: BC846AW-BC848CW NPN SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data • Ideally Suited for Automatic Insertion  Case: SOT323  Complementary PNP Types: BC856W – BC858W  Case material: molded plastic, “Green” molding compound  For Switching and AF Amplifier Applications

Contextual Info: BC846AW-BC848CW NPN SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data • Ideally Suited for Automatic Insertion  Case: SOT323  Complementary PNP Types Available BC856W – BC858W  Case material: molded plastic, “Green” molding compound

n channel mosfet vds max 60v, id max 260ma

Contextual Info: DMN65D8LW N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features RDS(ON) • • • • • • • • • ID TA = +25°C Package 300mA 3Ω @ VGS = 10V SOT323 60V 260mA 4Ω @ VGS = 5V Description This new generation MOSFET has been designed to minimize the onstate resistance (RDS(on) and yet maintain superior switching

BAS40W

Contextual Info: BAS40W /-04 /-05 /-06 SURFACE MOUNT SCHOTTKY BARRIER DIODE Features Mechanical Data • Low Forward Voltage Drop • • Fast Switching • • Ultra-Small Surface Mount Package Case: SOT323 Case Material: Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0

Contextual Info: DMN3065LW N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features Package V BR DSS RDS(ON) 30V 52mΩ @ VGS = 10V 65mΩ @ VGS = 4.5V 85mΩ @ VGS = 2.5V ID max TA = +25°C SOT323 4A • Low On-Resistance • Low Gate Threshold Voltage

BC856AW

Abstract: BC856BW
Contextual Info: BC856AW-BC858CW PNP SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data • Ideally Suited for Automatic Insertion  Case: SOT323  Complementary NPN Types Available BC846AW – BC848CW  Case material: molded plastic, “Green” molding compound

Contextual Info: A Product Line of Diodes Incorporated ZUMTS17N NPN RF TRANSISTOR IN SOT323 Features Mechanical Data • • • • • • • • • 3.2GHz unity gain for RF switching applications Totally Lead-Free & Fully RoHS compliant Notes 1 & 2 Halogen and Antimony Free. “Green” Device (Note 3)

Contextual Info: DMN3065LW N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Product Summary Features Package V BR DSS RDS(ON) 30V 52mΩ @ VGS = 10V 65mΩ @ VGS = 4.5V 85mΩ @ VGS = 2.5V ID max TA = +25°C SOT323 4A • Low On-Resistance  Low Gate Threshold Voltage

Contextual Info: MMST5401 160V PNP SMALL SIGNAL TRANSISTOR IN SOT323 Features Mechanical Data • Epitaxial Planar Die Construction • • Ultra-Small Surface Mount Package • • Complementary PNP Type: MMST5551 Case: SOT323 Case Material: Molded Plastic. “Green” Molding Compound.

smd transistor marking HA

Abstract: TRANSISTOR SMD MARKING 2 HA SMD transistor code AL TRANSISTOR SMD MARKING CODE al SMD TRANSISTOR MARKING code DD Marking code m8t marking m8t TRANSISTOR SMD MARKING CODE dd SMD TRANSISTOR MARKING Dd
Contextual Info: Philips Semiconductors Product specification N-channel enhancement mode vertical D-MOS transistor FEATURES BSN20W PINNING - SOT323 • Direct interface to C-MOS, TTL, etc. PIN SYMBOL • High-speed switching 1 g gate • No secondary breakdown. 2 s source

Contextual Info: BAS19W - BAS21W SURFACE MOUNT FAST SWITCHING DIODE Features Mechanical Data • Fast Switching Speed • • Surface Mount Package Ideally Suited for Automated Insertion • • For General Purpose Switching Applications Case: SOT323 Case Material: Molded Plastic, "Green" Molding Compound,

Contextual Info: ZUMT718 20V PNP POWER SWITCHING TRANSISTOR IN SOT323 Features Mechanical Data • BVCEO > -20V • • IC = -1A Continuous Collector Current • • ICM = -3A Peak Pulse Current Case: SOT323 Case Material: Molded Plastic. “Green” Molding Compound UL Flammability Rating 94V-0