G10 ZENER DIODE Search Results

2m170z

Abstract: 2M11Z 2M12Z 2M13Z 2M14Z
Contextual Info: TAIWAN SEMICONDUCTOR [ s Pb RoHS 2M6.8Z - 2M200Z 2.0 Watts Glass Passivated Junction Silicon Zener Diodes COMPLIANCE DO-15 Features .1 4 0 3 .6 1 .0 (2 5 .4 ) MIN. .1 0 4 (2 .6 ) DIA, Plastic package has Underwriters Laboratory Flammability Classification

g51 smd

Abstract: smd marking code G16 BZG03-C39 smd G47 smd code g18 smd marking g24 BZG03-C200 galaxy zener smd color marking zener BZG03C18 BZG03C120
Contextual Info: BL GALAXY ELECTRICAL BZG03C - - - SERIES VZ : ZENER DIODES 10 - 270 V POWER DISSIPATION: 3.0 W FEATURES ◇ High reliability DO-214AC SMA ◇ Voltage range 10 V to 270 V ◇ Fits onto 5 mm SMD footpads ◇ Wave and reflow solderable Glass passivated junction

smd 39a diode zener

Abstract: TH 2190 mosfet 39A zener diode th 2190 TH 2190 mosfet isolated smd diode 39a P Channel Power MOSFET IRF TH 2190 Transistor AN-994 IRLBD59N04E
Contextual Info: PD -93910B IRLBD59N04E HEXFET Power MOSFET Integrated Temperature Sensing Diode Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fully Avalanche Rated Zener Gate Protected VDSS = 40V RDS on = 0.018Ω ID = 59A Description The IRLBD59N04E is a 40V, N-channel HEXFET®

TH 2190 mosfet

Abstract: smd 39a diode zener TH 2190 mosfet isolated AN-994 IRLBD59N04E SMD-220 G10 zener diode 39A zener diode
Contextual Info: PD -93910B IRLBD59N04E HEXFET Power MOSFET Integrated Temperature Sensing Diode Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fully Avalanche Rated Zener Gate Protected VDSS = 40V RDS on = 0.018Ω ID = 59A Description The IRLBD59N04E is a 40V, N-channel HEXFET®

smd 39a diode zener

Abstract: 39A zener diode AN-994 IRLBD59N04E SMD-220
Contextual Info: PD -93910A IRLBD59N04E HEXFET Power MOSFET l l l l l l Integrated Temperature Sensing Diode Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fully Avalanche Rated Zener Gate Protected VDSS = 40V RDS on = 0.018Ω ID = 59A† Description

AN-994

Abstract: IRLBD59N04E SMD-220 G10 zener diode smd zener diode KH v smd diode 59A
Contextual Info: PD -93910 IRLBD59N04E HEXFET Power MOSFET l l l l l l Integrated Temperature Sensing Diode Ultra Low On-Resistance Dynamic dv/dt Rating 175°C Operating Temperature Fully Avalanche Rated Zener Gate Protected VDSS = 40V RDS on = 0.018Ω ID = 59A† Description

301AT

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF151 The RF MOSFET Line RF P o w er F ield -E ffect Transistor N-Channel Enhancement-Mode MOSFET . . . designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

G10 zener diode

Abstract: "RCA Solid State thyristor SGT03U13 SGT06U13 SGT23U13 Surgector dw0t
Contextual Info: G E SOLI» STATE Gl 3875081 G E SOLID STATE ’" D e | 3fl750àl0Q17fa34 ' 0 ÏÊT 17634 T -K '1 3 ' D - S U R G E C T O R s

MRF151

Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er F ield -E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband com m ercial and m ilitary applications at frequencies to 175 MHz. The high power, high gain and broadband perform ance of this

STO-175

Abstract: MRF151 MOSFET RF POWER TRANSISTOR VHF
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Pow er Field -E ffect Transistor MRF151 N-Channel Enhancement-Mode MOSFET D e s ig n e d fo r b ro a d b a n d co m m e rc ia l a n d m ilita ry a p p lic a tio n s a t fre q u e n c ie s to 175 M H z. T h e high pow e r, high g a in a n d b ro a d b a n d p e rfo rm a n c e o f th is

F3200Z

Abstract: 050gj TBD 135 Transistor
Contextual Info: MOTOROLA Order this document by MMDF3200Z/D SEMICONDUCTOR TECHNICAL DATA Product Preview M M D F 3200Z WaveFET Motorola Preferred Device Medium Power Surface Mount Products TMOS Dual N-Channel Field Effect Transistors DUAL TMOS POWER MOSFET 11.5 AMPERES

LT1790

Abstract: ltpz 30578 LT1790-5 LTXW LT1790-25
Contextual Info: LT1790 Micropower SOT-23 Low Dropout Reference Family U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO High Accuracy: A Grade—0.05% Max B Grade—0.1% Max Low Drift: A Grade—10ppm/°C Max B Grade—25ppm/°C Max Low Profile 1mm ThinSOTTM Package

V17905

Abstract: 30578 LTPZ LT1790-2048 LT1790 205046
Contextual Info: LT1790 Micropower SOT-23 Low Dropout Reference Family U FEATURES • ■ ■ ■ ■ ■ ■ ■ ■ DESCRIPTIO High Accuracy: A Grade—0.05% Max B Grade—0.1% Max Low Drift: A Grade—10ppm/°C Max B Grade—25ppm/°C Max Low Profile 1mm ThinSOTTM Package

Contextual Info: MOTOROLA Order this document by MRF151/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF151 N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

mrf1516

Abstract: MRF1512 wide band choke vk200 Unelco Metal Clad Micas AN211A motorola AN211A Transistor MRF151 UNELCO MICA CAPACITORS 1N5347 Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF151/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF151 N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

RF800

Abstract: MRF151A Transformer Communication Concepts rf power amplifier transistor with s-parameters RF800 transformer RF-800 Unelco Metal Clad Micas 1N5347 2204B AN211A
Contextual Info: ELECTRICAL CHARACTERISTICS TC = 25°C unless otherwise noted. Characteristic Symbol Min Typ Max Unit V(BR)DSS 125 — — Vdc Zero Gate Voltage Drain Current (VDS = 50 V, VGS = 0) IDSS — — 5.0 mAdc Gate–Body Leakage Current (VGS = 20 V, VDS = 0) IGSS

F7N02Z

Abstract: D7N02
Contextual Info: MOTOROLA Order this document by MMDF7N02Z/D SEMICONDUCTOR TECHNICAL DATA Advance Information M M D F 7N 02Z Medium Power Surface Mount Products Motorola Preferred Device TMOS Dual N-Channel w ith Monolithic Zener ESD Protected Gate DUAL TMOS POWER MOSFET 7.0 AMPERES

5252 F 0911

Abstract: 5252 F mosfet 5252 F 0918 1030F
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N–Channel Enhancement–Mode MOSFET MRF151 Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

Unelco Metal Clad Micas

Abstract: wide band choke vk200 2204B AN211A J101 MRF151 VK200 1N5347 G10 zener diode
Contextual Info: Order this document by MRF151/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF151 N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

ZC40

Contextual Info: Z-Power LED X10490 Technical Data Sheet RoHS Specification ZC-40 SSC-SBW*5F1A SBW*5F1A March. 2013 1 www.seoulsemicon.com 서식번호 : QP-7-07-18 (Rev.00) Z-Power LED X10490 Technical Data Sheet Specification SBW*5F1A Features • Super high Flux output

1N5347

Abstract: motorola AN211A motorola MOSFET 935 2204B AN211A J101 MRF151 VK200 mrf1516 D345
Contextual Info: MOTOROLA Order this document by MRF151/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor MRF151 N–Channel Enhancement–Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

MRF5003

Abstract: "RF power MOSFETs" transistor motorola 236 zener diode z10 1N4734 AN211A AN215A AN721 Nippon capacitors
Contextual Info: MOTOROLA Order this document by MRF5003/D SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field Effect Transistor MRF5003 N–Channel Enhancement–Mode The MRF5003 is designed for broadband commercial and industrial applications at frequencies to 520 MHz. The high gain and broadband

equivalent of transistor D 2331

Abstract: 1RC5
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-Effect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this

MRF151G

Abstract: BH Rf transistor mrf151g 300 MRF151G hf amplifier
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA The RF MOSFET Line RF Power Field-E ffect Transistor N-Channel Enhancement-Mode MOSFET Designed for broadband commercial and military applications at frequencies to 175 MHz. The high power, high gain and broadband performance of this