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INPAQ Technology Co Ltd MCI0603TG10NHHBPDG FIXED IND 0603 10NH 250MA 0.7OHM
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	MCI0603TG10NHHBPDG	Reel	75,000		15,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
	MCI0603TG10NHHBPDG	Cut Tape	75,000		1	1 $0.1 10 $0.01 100 $0.0039 1000 $0.00323 10000 $0.00282	Buy Now
	MCI0603TG10NHHBPDG	Digi-Reel	75,000		1	1 $0.1 10 $0.01 100 $0.0039 1000 $0.00323 10000 $0.00282	Buy Now
Johanson Technology Inc LRW0402WG10NGG001T FIXED IND 10NH 480MA 195MOHM SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey	LRW0402WG10NGG001T	Reel	30,000		10,000	1 - 10 - 100 - 1000 - 10000 $0.09601	Buy Now
Murata Manufacturing Co Ltd LQP03TG10NJ02D FIXED IND 10NH 190MA 1.52OHM SMD
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	LQP03TG10NJ02D	Cut Tape	12,749		1	1 $0.1 10 $0.017 100 $0.0142 1000 $0.01164 10000 $0.01016	Buy Now
	LQP03TG10NJ02D	Digi-Reel	12,749		1	1 $0.1 10 $0.017 100 $0.0142 1000 $0.01164 10000 $0.01016	Buy Now
Mouser Electronics	LQP03TG10NJ02D		14,647			1 $0.1 10 $0.017 100 $0.015 1000 $0.012 10000 $0.009	Buy Now
TME	LQP03TG10NJ02D				15,000	1 - 10 - 100 - 1000 - 10000 -	Get Quote
Avnet Abacus	LQP03TG10NJ02D			9 Weeks	15,000	1 - 10 - 100 - 1000 - 10000 -	Buy Now
Goford Semiconductor G10N10A N100V,RD(MAX)130MOHM@10V,TO-252
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	G10N10A	Digi-Reel	4,227		1	1 $0.86 10 $0.535 100 $0.3466 1000 $0.23934 10000 $0.23934	Buy Now
	G10N10A	Cut Tape	4,227		1	1 $0.86 10 $0.535 100 $0.3466 1000 $0.23934 10000 $0.23934	Buy Now
	G10N10A	Reel	2,500		2,500	1 - 10 - 100 - 1000 - 10000 $0.18456	Buy Now
Goford Semiconductor G10N03S N30V,RD(MAX)<12M@10V,RD(MAX)<16M
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
DigiKey ()	G10N03S	Digi-Reel	3,500		1	1 $0.66 10 $0.409 100 $0.2622 1000 $0.1783 10000 $0.16107	Buy Now
	G10N03S	Cut Tape	3,500		1	1 $0.66 10 $0.409 100 $0.2622 1000 $0.1783 10000 $0.16107	Buy Now
Verical	G10N03S		20,000		4,000	1 - 10 - 100 - 1000 - 10000 $0.098	Buy Now

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G10N Datasheets (1)

Part	ECAD Model	Manufacturer	Description	Curated	Datasheet Type	PDF	PDF Size	Page count
G10N03S		Goford Semiconductor	N30V,RD(MAX)<12M@10V,RD(MAX)<16M		Original	PDF	699.72KB	6

G10N Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
10N120BN Contextual Info: G10N120BN, HGTP10N120BN, HGT1S10N120BNS Semiconductor Data Sheet January 1999 35A, 1200V, NPT Series N-Channel IGBT Features The G10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high	OCR Scan	HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS HGTP10N120BN HGT1S10N120BNS O-263AB 10N120BN, 10N120BN	PDF
Contextual Info: 4 TH IS DRAWING COPYRIGHT IS U N P U B L IS H E D . 2 3 RELEASED BY 1WCO ELECTRONICS CORPORATION. FOR PUBLIC ATIO N LOC D IS T R E V IS IO N S ALL INTERNATIONAL RIGHTS RESERVED. P LTR D E S C R IP TIO N A PR ODUCTION DATE RE LE ASE 03 S EP DWN APVD BJR MKS	OCR Scan		PDF
g10n60 Contextual Info: SGP02N60 SGD02N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	SGP02N60 SGD02N60 PG-TO-252-3-1 PG-TO-220-3-1 O-252AA) O-220AB) SGD02N60 g10n60	PDF
g10n60 Abstract: SGB10N60A J-00M SGB10N60A equivalent Contextual Info: SGB10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	SGB10N60A SGB10N60A g10n60 J-00M SGB10N60A equivalent	PDF
10N120BN Abstract: G10N120BN ta49290 T0263AB Contextual Info: G10N120BN, HGTP10N120BN, HGT1S10N120BNS S em iconductor January 1999 Data Sheet 35A, 1200V, NPT Series N-Channel IGBT Features The G10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high	OCR Scan	HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS HGTP10N120BN HGT1S10N120BNS O-263AB 10N120BN, 10N120BN G10N120BN ta49290 T0263AB	PDF
G8Z-002 Abstract: G10Z-002 G5Z-003 240v DC motor A1s 46 G8Z-003 DC MOTOR 6-24v Contextual Info: WILLOW Technologies Sensors Non-Insulated Tilt and Position Switches Tilt switches "make" when the electrode is tilted below horizontal and "break" when tilted above the horizontal. Total travel from "make" to "break" is the "Maximum included angle" shown below. The component	Original	A1S-017 20-480V 20-240V G8Z-002 G10Z-002 G5Z-003 240v DC motor A1s 46 G8Z-003 DC MOTOR 6-24v	PDF
Contextual Info: O rd e r this data sheet by M R F10150H/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10150H’ Microwave Pulse Power Transistor 150 Watts Peak NPN 1025-1150 MHz CPT0 Designed for 1025-1150 MHz pulse common base amplifiers. • Guaranteed Performance at 1090 MHz	OCR Scan	F10150H/D MRF10150H' MRF10150HX MRF10150HXV MRF10150HS MRF10150HC 376B-02 1PHX31252-1 MRF10150H/D	PDF
g10n50c1 Abstract: G10N50E1 HGTP10N40E1 50E1 HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1 HGTP10N40C1 HGTP10N50C1 Contextual Info: HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 S E M I C O N D U C T O R 10A, 12A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 10A and 12A, 400V and 500V EMITTER • VCE ON : 2.5V Max. COLLECTOR • TFI: 1µs, 0.5µs	Original	HGTP10N40C1, HGTH12N40C1, O-218AC O-220AB HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40E1, g10n50c1 G10N50E1 HGTP10N40E1 50E1 HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1 HGTP10N40C1 HGTP10N50C1	PDF
G10N60A Abstract: g10n60 SGW10N60A G10N60A DATASHEET SGP10N60A inverter 12 to 220 100w PG-TO-247-3-21 PG-TO-220-3-1 PG-TO-247-3 G10N Contextual Info: SGP10N60A SGW10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter PG-TO-247-3 • NPT-Technology for 600V applications offers:	Original	SGP10N60A SGW10N60A PG-TO-247-3 PG-TO-220-3-1 G10N60A PG-TO-220-ontain G10N60A g10n60 SGW10N60A G10N60A DATASHEET SGP10N60A inverter 12 to 220 100w PG-TO-247-3-21 PG-TO-220-3-1 PG-TO-247-3 G10N	PDF
g10n50 Abstract: EM- 534 motor Contextual Info: HARRIS S E M I C O N D U C T O R H G T D 1 0N 4 0 F1 , HGTD10N40F1S, H G T D 1 0N 5 0 F1 , HGTD 10N 50F1S 10A, 400V and 500V N- Channel I GBTs March 1997 Features Packages HGTD10N40F1, HGTD10NS0F1 JEDEC TO-251 AA • 1 0 A , 4 0 0 V and 500V • V CE ON 2 .5 V M a x .	OCR Scan	HGTD10N40F1S, 50F1S HGTD10N40F1, HGTD10NS0F1 O-251 0N40F1 0N50F1 HGTD10N50F1, g10n50 EM- 534 motor	PDF
12N50E Abstract: 12N50E1 10N50E1 g10n50c1 10N50C1 A 933 S transistors 10N40E1 12N50C1 tp10n40c TP10N40 Contextual Info: r r I i- i a c a m e ; <Ü h g t p i 0N40C1, 40E1, s o c i , 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 o? 10A, 12A, 400V and 500V N-Channel IGBTs A p ril 1 9 9 5 Features Packages H G TH -TY P E S JE D E C TO -218A C • 10A and 12A, 400V and 500V • ^CE ON ’ 2.5V Max.	OCR Scan	0N40C1, HGTH12N40C1, -218A -220A HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, 12N50E 12N50E1 10N50E1 g10n50c1 10N50C1 A 933 S transistors 10N40E1 12N50C1 tp10n40c TP10N40	PDF
g10n60 Contextual Info: SGP02N60 SGD02N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	SGP02N60 SGD02N60 PG-TO-252-3-1 PG-TO-220-3-1 O-252AA) O-220AB) SGD02N60 g10n60	PDF
g10n60 Abstract: SGP10N60A Contextual Info: SGP10N60A SGW10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter PG-TO-247-3-21 • NPT-Technology for 600V applications offers:	Original	SGP10N60A SGW10N60A PG-TO-247-3-21 SGW10N60A g10n60	PDF
g10n60 Abstract: Q67040-S4510 Contextual Info: SGP10N60A SGW10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G • Designed for: - Motor controls - Inverter E PG-TO-247-3-1 TO-247AC	Original	SGP10N60A SGW10N60A SGW10N60A g10n60 Q67040-S4510	PDF

10N120BN Abstract: G10N120 10N120 TA49290 G10N120BN N-channel MOSFET 800v to-247 G10N G10N120b N-channel MOSFET to-247 HGT1S10N120BNS Contextual Info: G10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet January 2000 35A, 1200V, NPT Series N-Channel IGBT Features The G10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best	Original	HGTG10N120BN, HGTP10N120BN, HGT1S10N120BNS HGTP10N120BN HGT1S10N120BNS 10N120BN G10N120 10N120 TA49290 G10N120BN N-channel MOSFET 800v to-247 G10N G10N120b N-channel MOSFET to-247	PDF
tc 144e Abstract: 144EK Contextual Info: Part Marking □Marks are filled with hR ranks EM3 #h n Ranking Inc Ication C ode hFE R anking C ode h R R anking P a rt M a rkin g P a rt No. P ackage P art M arking 1C D P art No. 2SC4082 AD 2SC4818 ACD 2SC 4725 1D D 2SC4063 ADD 2SC 4726 1ED 2S C 4 0 S 4	OCR Scan	2SC4082 2SC4818 2SC4063 2SC4617 2SD1664 2SD1768 2SD2098 2SC4672 2S02167 2SD2170 tc 144e 144EK	PDF
G10N60A Abstract: g10n60 G10N60A DATASHEET PG-TO-263-3-2 PG-TO263-3-2 SGB10N60A S025A Contextual Info: SGB10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	SGB10N60A PG-TO-263-3-2 G10N60A G10N60A g10n60 G10N60A DATASHEET PG-TO-263-3-2 PG-TO263-3-2 SGB10N60A S025A	PDF
150 g35 capacitor Abstract: 150 g25 capacitor G15CG0R3 Dielectric Laboratories G15CFR NS2R G10BG2R2 Contextual Info: GAP CAPS dielectric laboratories Precision Series Capacitors for Microwave Applications Part Number G 15 BH 100 K 5 P X 10 Product Code Gap Width In Mils Case Size Test Code Material Code Termination Code Capacitance Code Voltage Rating WVDC Tolerance Code	Original	030BG180 5PX20 G30BH200 G30BH220 G30BH270 G30BH300 150 g35 capacitor 150 g25 capacitor G15CG0R3 Dielectric Laboratories G15CFR NS2R G10BG2R2	PDF
g10n60 Contextual Info: SGB10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:	Original	SGB10N60A P-TO-263-3-2 O-263AB) G10N60 PG-TO-263-ntain g10n60	PDF
G10N60A Abstract: g10n60 G10N60A DATASHEET SGW10N60A SGP10N60A IGBT 1500 igbt 1000v 10A PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21 Contextual Info: SGP10N60A SGW10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter PG-TO-247-3 • NPT-Technology for 600V applications offers:	Original	SGP10N60A SGW10N60A PG-TO-247-3 PG-TO-220-3-1 G10N60A SGW10ontain G10N60A g10n60 G10N60A DATASHEET SGW10N60A SGP10N60A IGBT 1500 igbt 1000v 10A PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21	PDF
DG10N Abstract: G10N Contextual Info: Ç l'= L G1V3S lO ld . dO I 133HS L0-¿t8C9-dSV 66-6Z-C N3M1IHID ‘AG 30VH •Z T S 31 Û N V 0 Z 0 0' T XXXX' S 00 ' T XXX' :3~LLLL 10' T X X ' S S O t'-O t-S -O lfl ;XM1 ¿ H I x o a O'd £ C Z 9 - t t6 319 ¡NO S 3 3 N V a T 1 0 1	OCR Scan	133HS 66-6Z-C 3SIMa3H10 SNIV1N00 NOI133dia DG10N G10N	PDF
65e9 transistor Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 \| \| ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12	Original	1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note	PDF
g10n60 Contextual Info: SGP10N60A SGW10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter PG-TO-247-3-21 • NPT-Technology for 600V applications offers:	Original	SGP10N60A SGW10N60A PG-TO-247-3-21 SGW10N60A g10n60	PDF
G10N60A Abstract: g10n60 SGW10N60A SGP10N60A Contextual Info: SGP10N60A SGW10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter PG-TO-247-3-21 • NPT-Technology for 600V applications offers:	Original	SGP10N60A SGW10N60A PG-TO-247-3-21 SGW10N60A G10N60A g10n60	PDF

G10N Search Results

G10N Price and Stock

INPAQ Technology Co Ltd MCI0603TG10NHHBPDG

Johanson Technology Inc LRW0402WG10NGG001T

Murata Manufacturing Co Ltd LQP03TG10NJ02D

Goford Semiconductor G10N10A

Goford Semiconductor G10N03S

G10N Datasheets (1)

G10N Datasheets Context Search

10N120BN

g10n60

g10n60

10N120BN

G8Z-002

g10n50c1

G10N60A

g10n50

12N50E

g10n60

g10n60

g10n60

10N120BN

tc 144e

G10N60A

150 g35 capacitor

g10n60

G10N60A

DG10N

65e9 transistor

g10n60

G10N60A