G1360 Search Results

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1708 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWINGS Unit : mm This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management 8 5 switch.

Contextual Info: データ・シート MOS 形電界効果トランジスタ MOS Field Effect Transistor µ PA1708 N チャネル パワーMOS FET スイッチング用 工業用 µ PA1708 は，N チャネル縦型パワーMOS FET で，オン抵抗特性が優れており，オンボード電源の 2 次側 DC/DC

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

triac tag 8518

Abstract: 70146 DS3654 X2864AD 7 segment display RL S5220 TC9160 la 4440 amplifier circuit diagram 300 watt philips ecg master replacement guide vtl 3829 A-C4 TCA965 equivalent
Contextual Info: 1985 0 / 0 / CONTENTS VOLUME I Introduction to IC MASTER 3 Advertisers’ Index 8 Master Selection Guide Function Index I0 Part Number Index 40 Part Number Guide 300 Logo Guide 346 Application Note Directory 349 Military Parts Directory 50I Testing 506 Cross Reference

TCA965 equivalent

Abstract: ULN2283 capacitor 473j 100n UAF771 transistor GDV 65A pbd352303 cm2716 TAA2761 TAA4761 ULN2401
Contextual Info: veryimpressivePrice. power drain. For the same low price astheTTL-compatible DG211. Very Impressive Performance. Low power, low source-drain ON resistance, low switching times, low current, low price. It all adds up to superstar performance for portable and battery-operated

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

IN4009

Abstract: G1330/40/50/60 G129 G130 G1340 g131 g1330
Contextual Info: INHSR5IL Q12 5 - 0 1 3 2 G1330/40/50/60 4-Channel Junction FET Switches FEATURES G EN ER A L DESCRIPTION • rDS ON < 10 ohms: G 1 3 4 0 and G 1 3 6 0 • Id i o f f ) • C DG- These switches consist of four N-Channel Junction F E T S in a single package. In the G129, G 130, G131, G132, G 13 5 0

Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1708 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION PACKAGE DRAWINGS Unit : mm This product is N-Channel MOS Field Effect Transistor designed for DC/DC converters and power management 8 5 switch.