G21 SOT23 Search Results

g23 sot23

Abstract: sot23 G17 MMBZ4625
Contextual Info: 350mW ZENER DIODES MMBZ46 SERIES • New Product SOT23 Pkg. TA = 25˚C • • • • • • • • • • • Nom. Test Voltage Current VZ@IZT IZT Type Marking V µA MMBZ4617 G17 2.4 250 MMBZ4618 G18 2.7 250 MMBZ4619 G19 3.0 250 MMBZ4620 G20 3.3 250 MMBZ4621

diode G21

Abstract: marking G21 Z5 LD4RA BZX84-C27 BZX84C18 g21 Transistor BZX84C3V0 BZX84 BAV74 BAV99
Contextual Info: SOT 23 DIODES SILICON PLANAR HIGH SPEED SWITCHING DIODES Ratings and Characteristics at 25°C ambient temperature Max. Type FM MD914 HD3A BAV70 BAV74 HD2A BAV99 BAW 56 HD4A * lF = 100m A D escription Single diode Single diode Dual diode w ith Dual diode w ith

MA6 diode

Abstract: diode G21 LMBD2838LT1 DIODE a5 g21 Transistor lt1 switch LMBD2837LT1 LMBD2837LT1G LMBD2838LT1G a5 marking
Contextual Info: LESHAN RADIO COMPANY, LTD. Monolithic Dual Switching Diodes FETURE LMBD2837LT1 LMBD2838LT1 • Pb-Free Package is available. ORDERING INFORMATION Device Marking Shipping A5 3000/Tape&Reel A5 Pb-Free 3000/Tape&Reel LMBD2837LT1 LMBD2837LT1G LMBD2838LT1 LMBD2838LT1G

G21 SOT23

Contextual Info: Product specification DMG2301U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS ON max ID max TA = +25°C 80mΩ @ VGS = 4.5V -2.7A 110mΩ @ VGS = 2.5V -2.1A V(BR)DSS -20V Features • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed

Y22 SOT23

Abstract: MSB003 g21 Transistor PMBTH10 B22 base PMBTH81 transistor b11 switching transistor y11 transistor transistor G11
Contextual Info: DISCRETE SEMICONDUCTORS DATA SHEET PMBTH10 NPN 1 GHz general purpose switching transistor Product specification File under Discrete Semiconductors, SC14 September 1995 Philips Semiconductors Product specification NPN 1 GHz general purpose switching transistor

SOT-23 marking g23

Abstract: g23 sot23 sot23 G17 marking G18 MMBZ4627 ZENER DIODES SOT-23 MMBZ4623 g23 sot-23 MMBZ4618 sot-23 MARKING CODE G18
Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT MMBZ4617 THRU MMBZ4627 ZENER DIODES SOT-23 FEATURES .122 3.1 .118 (3.0) .016 (0.4) ¨ Silicon Planar Low Noise Zener Diodes Top View ¨ 350mW high quality voltage regulator designed for low leakage, low current and low noise applications

SOT-23 marking g23

Abstract: marking code ZENER g23 sot23 sot-23 MARKING CODE G18
Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT MMBZ4617 THRU MMBZ4627 ZENER DIODES SOT-23 FEATURES .122 3.1 .110 (2.8) .016 (0.4) ♦ Silicon Planar Low Noise Zener Diodes Top View ♦ 350mW high quality voltage regulator designed for low leakage, low current and low noise applications

marking 27A sot-23

Abstract: diode G21
Contextual Info: DMG2301U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(ON) max ID max TA = 25°C 80mΩ @ VGS = 4.5V -2.7A 110mΩ @ VGS = 2.5V -2.1A • • • • • • Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance

SOT-23 marking g23

Abstract: g23 sot23 G18 SOT-23 sot-23 MARKING CODE G18 sot23 G17 SOT-23 g23 MMBZ4625 G21 SOT23 marking code SS SOT23
Contextual Info: NEW PRODUCT NEW PRODUCT NEW PRODUCT MMBZ4617 THRU MMBZ4627 ZENER DIODES SOT-23 FEATURES .1 18 3.0 ♦ Silicon Planar Low Noise Zener Diodes Top View 0 1 6 (0 .4) a ♦ 350mW high quality voltage regulator designed for low leakage, low current and low noise applications

DMG2301U

Abstract: DMG2301U-7 J-STD-020D
Contextual Info: DMG2301U P-CHANNEL ENHANCEMENT MODE MOSFET Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • NEW PRODUCT Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

Contextual Info: DMG2301U P-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS RDS(ON) max ID max TA = 25°C 80mΩ @ VGS = 4.5V -2.7A 110mΩ @ VGS = 2.5V -2.1A • • • • • • Description and Applications Mechanical Data This MOSFET has been designed to minimize the on-state resistance

SOT-23 marking g23

Abstract: g23 sot-23 transistor g23 marking code V MMBZ4625 Low Noise Zener Diode MMBZ4617 MMBZ4618 MMBZ4619 G18 SOT-23
Contextual Info: MMBZ4617 thru MMBZ4627 Vishay Semiconductors New Product formerly General Semiconductor Zener Diodes VZ Range 2.4 to 6.2V Power Dissipation 350mW SOT-23 Top View .122 3.1 .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 1 .007 (0.175) .005 (0.125)

ZENER 1

Abstract: MMBZ4617 MMBZ4618 MMBZ4619 MMBZ4620 MMBZ4621 MMBZ4622 MMBZ4627 g23 sot23 SOT-23 marking g23
Contextual Info: MMBZ4617 thru MMBZ4627 Zener Diodes t c u rod P New VZ Range 2.4 to 6.2V Power Dissipation 350mW SOT-23 Top View .122 3.1 .110 (2.8) .016 (0.4) Top View .056 (1.43) .052 (1.33) 3 1 Mounting Pad Layout .016 (0.4) .016 (0.4) 0.037 (0.9 0.037 (0.95) .045 (1.15)

g23 sot23

Contextual Info: . A . G eneral ^ S e m ic o n d u c to r MMBZ4617 thru MMBZ4627 Zener Diodes % Vz Range 2.4 to 6.2V Power Dissipation 350mW f t W SOT-23 Top View a •122 3.1 . 1 1 0 ( 2 .8 ) .016(0.4) 2 Top View □ 0 " Mounting Pad Layout h—0.037 0.03 (0.95) 0.037 (0.95)

Contextual Info: DMG2301U P-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS •      ID max TA = +25°C RDS(ON) max -20V 80mΩ @ VGS = 4.5V -2.7A 110mΩ @ VGS = 2.5V -2.1A Low On-Resistance Low Input Capacitance Fast Switching Speed Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

CYStech Electronics

Abstract: DTB113ZN3 DTD113ZN3 BG21 marking G21
Contextual Info: Spec. No. : C379N3 Issued Date : 2003.10.05 Revised Date : 2004.02.26 Page No. : 1/4 CYStech Electronics Corp. NPN Digital Transistors Built-in Resistors DTD113ZN3 Features • Built-in bias resistors enable the configuration of an inverter circuit without connecting external input

MMBZ4617-V

Abstract: g23 sot23 SOT-23 marking g23 marking G21 Vishay zener SOT23
Contextual Info: MMBZ4617-V to MMBZ4627-V Vishay Semiconductors Small Signal Zener Diodes Features • Silicon planar low noise zener diodes. • 350 mW high quality voltage regulator designed for low leakage, low current and low noise applications • 5 % tolerance on VZ

Contextual Info: MMBZ4617-V to MMBZ4627-V Vishay Semiconductors Small Signal Zener Diodes Features • Silicon Planar Low Noise Zener Diodes. • 350 mW high quality voltage regulator e3 designed for low leakage, low current and low noise applications • 5 % Tolerance on VZ

MMBZ4627

Abstract: MMBZ4617 MMBZ4618 MMBZ4619 MMBZ4620 MMBZ4621
Contextual Info: MMBZ4617 to MMBZ4627 VISHAY Vishay Semiconductors Zener Diodes Features • Silicon Planar Low Noise Zener Diodes. • 350 mW high quality voltage regulator designed for low leakage, low current and low noise applications • 5 % Tolerance on VZ • High temperature soldering guaranteed:

Contextual Info: MMBZ4617-V to MMBZ4627-V Vishay Semiconductors Small Signal Zener Diodes Features • Silicon Planar Low Noise Zener Diodes. • 350 mW high quality voltage regulator designed for low leakage, low current and low noise applications • 5 % Tolerance on VZ

Contextual Info: MMBZ4617 to MMBZ4627 VISHAY Vishay Semiconductors Small Signal Zener Diodes Features • Silicon Planar Low Noise Zener Diodes. • 350 mW high quality voltage regulator designed for low leakage, low current and low noise applications • 5 % Tolerance on VZ

Contextual Info: MMBZ4617 to MMBZ4627 VISHAY Vishay Semiconductors Small Signal Zener Diodes Features • Silicon Planar Low Noise Zener Diodes. • 350 mW high quality voltage regulator designed for low leakage, low current and low noise applications • 5 % Tolerance on VZ

FR 43

Abstract: g23 sot23
Contextual Info: MMBZ4617-V to MMBZ4627-V Vishay Semiconductors Small Signal Zener Diodes Features • Silicon planar low noise Zener diodes. • 350 mW high quality voltage regulator designed for low leakage, low current and low noise applications • 5 % tolerance on VZ

Contextual Info: MMBZ4617-V to MMBZ4627-V Vishay Semiconductors Small Signal Zener Diodes Features • Silicon Planar Low Noise Zener Diodes. • 350 mW high quality voltage regulator e3 designed for low leakage, low current and low noise applications • 5 % Tolerance on VZ