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    G3 SMD TRANSISTOR Search Results

    G3 SMD TRANSISTOR Result Highlights (5)

    Part ECAD Model Manufacturer Description Download Buy
    TTC5886A Toshiba Electronic Devices & Storage Corporation NPN Bipolar Transistor / hFE=400~1000 / VCE(sat)=0.22V / tf=120ns Visit Toshiba Electronic Devices & Storage Corporation
    TTA2097 Toshiba Electronic Devices & Storage Corporation PNP Bipolar Transistor / hFE=200~500 / VCE(sat)=-0.27V / tf=60ns Visit Toshiba Electronic Devices & Storage Corporation
    XPQR8308QB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 80 V, 350 A, 0.00083 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    XPQ1R00AQB Toshiba Electronic Devices & Storage Corporation N-ch MOSFET, 100 V, 300 A, 0.00103 Ω@10V, L-TOGL Visit Toshiba Electronic Devices & Storage Corporation
    TK190U65Z Toshiba Electronic Devices & Storage Corporation MOSFET, N-ch, 650 V, 15 A, 0.19 Ohm@10V, TOLL Visit Toshiba Electronic Devices & Storage Corporation

    G3 SMD TRANSISTOR Datasheets Context Search

    Catalog Datasheet MFG & Type PDF Document Tags

    g1 smd transistor

    Abstract: SMD transistor r24 SMD TRANSISTOR G1 Diode GP 622 3 pin SMD hall sensor g3 smd transistor smd transistor pinout sot23 SMD Transistor nc
    Text: ZXBM1015EV1 ZXBM1015EV1 USER GUIDE DESCRIPTION The ZXBM1015EV1 is a demonstration board for evaluating the ZXBM1015 Single Phase Brushless DC Motor Controller. PWM input control, thermistor input control or voltage input control can be selected simply by inserting a jumper.


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    PDF ZXBM1015EV1 ZXBM1015EV1 ZXBM1015 g1 smd transistor SMD transistor r24 SMD TRANSISTOR G1 Diode GP 622 3 pin SMD hall sensor g3 smd transistor smd transistor pinout sot23 SMD Transistor nc

    g3 smd transistor

    Abstract: SMD Transistor g5 transistor SMD g3 smd transistor g3 2SA1257
    Text: Transistors SMD Type PNP Epitaxial Planar Silicon Transistor 2SA1257 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Small output capacitance. 0.55 High breakdown voltage. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1


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    PDF 2SA1257 OT-23 te10V -30mA g3 smd transistor SMD Transistor g5 transistor SMD g3 smd transistor g3 2SA1257

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    Abstract: No abstract text available
    Text: Transistors SMD Type Product specification 2SA1257 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 +0.1 1.3-0.1 +0.1 2.4-0.1 Features 0.4 3 1 Small output capacitance. 0.55 High breakdown voltage. 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05


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    PDF 2SA1257 OT-23 -30mA

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    Abstract: No abstract text available
    Text: IC Transistors SMD Type Product specification FMG3A • Features Unit: mm ● Dual NPN digital transistor 4 5 1 3 (2) 2 3 (1) R1=4.7kΩ R1 DTr2 R1 DTr1 (4) (5) ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Collector-base voltage Parameter VCBO


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    PDF 50m100m

    Untitled

    Abstract: No abstract text available
    Text: Transistors IC SMD Type Emitter common Dual Digital Transistors FMG3A • Features Unit: mm ● Dual NPN digital transistor 4 5 1 (3) (2) 2 3 (1) R1=4.7kΩ R1 DTr2 R1 DTr1 (4) (5) ■ Absolute Maximum Ratings Ta = 25℃ Symbol Rating Unit Collector-base voltage


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    PDF 100MHz 50m100m

    transistor l1w smd

    Abstract: ng52 mmic transistor E5 SMD Transistor Y04 SMD K62 smd mmic transistor E5 WG1 smd O2W transistor G7FH transistor g7x
    Text: CCS1930 Product Information March 1996 1 of 2 1.85 to 2.0 GHz 1 Watt Amplifier Chip Set Features ❏ High Gain ≈ 32 dB ❏ +30 dBm Output Power @ 5 Volts ❏ >45% Efficiency Achievable ❏ Small Size Functional Block Diagram CMM1301 CFK2062 Applications


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    PDF CCS1930 CMM1301 CFK2062 CCS1930 CMM1301) CFK2062) CFK2062 PB-CCS1930 transistor l1w smd ng52 mmic transistor E5 SMD Transistor Y04 SMD K62 smd mmic transistor E5 WG1 smd O2W transistor G7FH transistor g7x

    3F1 SMD Transistor

    Abstract: 3fx transistor transistor 3Fn 24 smd transistor lg smd transistor LF smd JH transistor celeritek CCS1933 F7104 smd transistor fh
    Text: CCS1933 Product Information March 1996 1 of 2 1.85 to 2.0 GHz 2 Watt Amplifier Chip Set Features ❏ High Gain ≈ 35 dB ❏ +33 dBm Output Power @ 5 Volts ❏ >45% Efficiency Achievable ❏ Small Size Functional Block Diagram CMM1301 CFK2162 Applications


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    PDF CCS1933 CMM1301 CFK2162 CCS1933 CMM1301) CFK2162) PB-CCS1933 3F1 SMD Transistor 3fx transistor transistor 3Fn 24 smd transistor lg smd transistor LF smd JH transistor celeritek F7104 smd transistor fh

    Philips Application Note ECO6907

    Abstract: AN98032 BD135 CURVES ECO7703 BD136 SMD TRANSISTOR COE82101 bd136 equivalent mosfet HF amplifier AN98030 HF power amplifier blf177
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 3 Power amplifier design POWER AMPLIFIER DESIGN NOTE TO SECTION 3 3.1 Classes of operation and biasing 3.1.1 For clarity in equations, identifiers such as R1, +jB2, −jX3 in drawings are written as


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    wy smd transistor

    Abstract: transistor k626 GHW Connectors g1n transistor TRANSISTOR f5j transistor smd 3f13 smd transistor EY transistor smd 3fh smd transistor fh f5j transistor
    Text: CCS2930 Product Information March 1996 1 of 2 2.4 to 2.5 GHz 1 Watt Amplifier Chip Set Features ❏ High Gain ≈ 30 dB ❏ +30 dBm Output Power @ 5 Volts ❏ 33% Efficient ❏ Small Size Functional Block Diagram CMM2301 CFK2062 Applications ❏ ISM Band Base Stations


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    PDF CCS2930 CMM2301 CFK2062 CCS2930 CMM2301) CFK2062) PB-CCS2930 wy smd transistor transistor k626 GHW Connectors g1n transistor TRANSISTOR f5j transistor smd 3f13 smd transistor EY transistor smd 3fh smd transistor fh f5j transistor

    Untitled

    Abstract: No abstract text available
    Text: User's Guide dit.SBOU130 – May 2013 PGA281EVM This user's guide describes the characteristics, operation, and use of the evaluation module EVM for the PGA281. This document also includes the schematic, printed circuit board (PCB) layout, and a bill of


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    PDF SBOU130 PGA281EVM PGA281. PGA281EVM. PGA281EVM

    88E1119R

    Abstract: 88E1119 smd transistor M21 AA7 smd diode w18 smd transistor smd transistor F21 w21 transistor smd SOT W17 SMD transistor MT41J64M16JT-15E SMD Transistor Y13
    Text:  LatticeECP3 Versa Evaluation Board User’s Guide August 2012 Revision: EB62_01.5  LatticeECP3 Versa Evaluation Board User’s Guide Introduction The LatticeECP3 Versa Evaluation Board allows designers to investigate and experiment with the features of the


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    PDF 25MHz HDR40 ATS120SM-1 HC-49/US-SM 25MHZ 1K-0402SMT 20K-0402SMT 100PF-0402SMT 3UF-10V-0805SMT HC49US-25 88E1119R 88E1119 smd transistor M21 AA7 smd diode w18 smd transistor smd transistor F21 w21 transistor smd SOT W17 SMD transistor MT41J64M16JT-15E SMD Transistor Y13

    88E1119R

    Abstract: 88E1119 AA7 smd diode smd transistor M21 LFE3-35E-FN484CES MT41J64M16JT-15E smd transistor w18 W17 smd package transistor w18 smd transistor SMD Transistor Y13
    Text:  LatticeECP3 Versa Evaluation Board User’s Guide February 2012 Revision: EB62_01.4  LatticeECP3 Versa Evaluation Board User’s Guide Introduction The LatticeECP3 Versa Evaluation Board allows designers to investigate and experiment with the features of the


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    PDF HC49US-25 000MABJUB HC49/US 1K-0402SMT ERJ-2RKF3012X 1/10W 20K-0402SMT ERJ-2RKF2002X 100PF-0402SMT 88E1119R 88E1119 AA7 smd diode smd transistor M21 LFE3-35E-FN484CES MT41J64M16JT-15E smd transistor w18 W17 smd package transistor w18 smd transistor SMD Transistor Y13

    npn transistor smd w19

    Abstract: LFE3-35E-FN484CES 88e1119r 88E1119 AA19 smd diode smd transistor w17 pDS4102-DL diode C238 88E111 FTD2232
    Text:  LatticeECP3 Versa Evaluation Board User’s Guide July 2013 Revision: EB62_01.6  LatticeECP3 Versa Evaluation Board User’s Guide Introduction The LatticeECP3 Versa Evaluation Board allows designers to investigate and experiment with the features of the


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    PDF 25MHZ HC49US-25 000MABJUB HC49/US 1K-0402SMT ERJ-2RKF3012X 1/10W 20K-0402SMT ERJ-2RKF2002X npn transistor smd w19 LFE3-35E-FN484CES 88e1119r 88E1119 AA19 smd diode smd transistor w17 pDS4102-DL diode C238 88E111 FTD2232

    NTC 220-11

    Abstract: PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide
    Text: Philips Semiconductors RF transmitting transistor and power amplifier fundamentals 1 Transmitting transistor design transistors are suitable, see panel, and Philips Semiconductors’ portfolio includes both types. Their relative merits are summarized later in this section. First,


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    PDF transisto25-735. NTC 220-11 PHILIPS TRANSMITTING BIPOLAR Philips Semiconductors Small-signal Transistors Selection guide

    Untitled

    Abstract: No abstract text available
    Text: CMPA801B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


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    PDF CMPA801B025F CMPA801B025F CMPA80 1B025F

    CMPA801B025

    Abstract: X-band Internally Matched Power GaN HEMTs
    Text: CMPA801B025F 25 W, 8.5 - 11.0 GHz, GaN MMIC, Power Amplifier Cree’s CMPA801B025F is a gallium nitride GaN High Electron Mobility Transistor (HEMT) based monolithic microwave integrated circuit (MMIC). GaN has superior properties compared to silicon or gallium arsenide, including higher breakdown voltage, higher


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    PDF CMPA801B025F CMPA801B025F CMPA80 1B025F CMPA801B025 X-band Internally Matched Power GaN HEMTs

    WMV smd transistor

    Abstract: smd mk
    Text: f.con ISO 14001 Alphanumerical product list art. no. page art. no. page art. no. page art. no. page 1706 . G 1831 . ASL . SMD . ASL . SMD . B SM ASLA . ASLG . BADM . BADP . BK 01 32 BL 1 . BL 10 . BL 11 . BL 12 . BL 13 . BL 14 .


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    g3 smd transistor

    Abstract: TTL IC 7405 open collector HS-245RH T3/g3 smd transistor TTL IC 7405 5962R9672201QCC 5962R9672201QXC 5962R9672201VCC 5962R9672201VXC HS-246RH
    Text: HS-245RH, HS-246RH, HS-248RH Data Sheet HS-245RH HS-246RH HS-248RH Radiation Hardened Triple Line Transmitter Radiation Hardened Triple Line Receiver Radiation Hardened Triple Party-Line Receiver The HS-245RH/246RH/248RH radiation hardened triple line transmitter and triple line receivers are fabricated using the


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    PDF HS-245RH, HS-246RH, HS-248RH HS-245RH HS-246RH HS-245RH/246RH/248RH HD-245/246/248. g3 smd transistor TTL IC 7405 open collector HS-245RH T3/g3 smd transistor TTL IC 7405 5962R9672201QCC 5962R9672201QXC 5962R9672201VCC 5962R9672201VXC HS-246RH

    TRANSISTOR SMD 6K

    Abstract: TTL IC 7405 30343 power HS-245RH TTL IC 7405 open collector g3 smd transistor HS SMD HS1-245RH-8 HS1-245RH-Q HS-246RH
    Text: HS-245RH, HS-246RH, HS-248RH TM Data Sheet HS-245RH HS-246RH HS-248RH Radiation Hardened Triple Line Transmitter Radiation Hardened Triple Line Receiver Radiation Hardened Triple Party-Line Receiver August 2000 File Number 3034.3 link” is provided on our homepage for downloading.


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    PDF HS-245RH, HS-246RH, HS-248RH HS-245RH HS-246RH HS-245RH/246RH/248RH HD-245/246/248. TRANSISTOR SMD 6K TTL IC 7405 30343 power HS-245RH TTL IC 7405 open collector g3 smd transistor HS SMD HS1-245RH-8 HS1-245RH-Q HS-246RH

    TTL IC 7405 open collector

    Abstract: TTL IC 7405 IC 7405 WIRE LESS TRANSMITTER IC transistor SMD g3 HS-245RH g3 smd transistor Digital Line Receivers long range transmitter receiver circuit 5962R9672201QCC
    Text: HS-245RH, HS-246RH, HS-248RH Data Sheet April 2003 HS-245RH Radiation Hardened Triple Line Transmitter HS-246RH Radiation Hardened Triple Line Receiver HS-248RH Radiation Hardened Triple Party-Line Receiver Features • Electrically Screened to SMD # 5962-96722 and


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    PDF HS-245RH, HS-246RH, HS-248RH HS-245RH HS-246RH HS-248RH MIL-PRF-38535 HS-245RH/246RH/248RH HD-245/246/248. TTL IC 7405 open collector TTL IC 7405 IC 7405 WIRE LESS TRANSMITTER IC transistor SMD g3 g3 smd transistor Digital Line Receivers long range transmitter receiver circuit 5962R9672201QCC

    10a h-bridge driver

    Abstract: H-bridge speed control 12v 10a 30V 20A 10KHz power MOSFET h-bridge pwm schematics circuit mosfet driver to drive 50V VDD h-bridge mosfet MD7120DB2 POS-100 ClassD Amplifier 100v "AC Motors" AUDIO MOSFET POWER AMPLIFIER SCHEMATIC
    Text: MD7120DB2 MD7120 High Speed 200V H-Bridge Demo Board Introduction Designing with the MD7120 The Supertex MD7120 is a high speed MOSFET driver designed to drive four N-channel MOSFET transistors in a full H-bridge configuration. It consists of control logic


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    PDF MD7120DB2 MD7120 MD7120 10a h-bridge driver H-bridge speed control 12v 10a 30V 20A 10KHz power MOSFET h-bridge pwm schematics circuit mosfet driver to drive 50V VDD h-bridge mosfet MD7120DB2 POS-100 ClassD Amplifier 100v "AC Motors" AUDIO MOSFET POWER AMPLIFIER SCHEMATIC

    503 10 010 00 vogt

    Abstract: VOGT 503 05 001 00 503 05 501 40 vogt vogt 503 05 501 40 vogt 503 10 010 00 vogt transformer s3 vogt t2 505 04 VOGT 503 05 010 30 503 20 010 10 vogt smd transistor r4D
    Text: Cologne Chip HFC - S mini ISDN HDLC FIFO controller with S/T interface and integrated FIFOs Data Sheet March 2006 Cologne Chip HFC-S mini Revision History Date Remarks March 2006 The consolidation begun with the previous data sheet revision attains its conclusion with this


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    marking NC sot23

    Abstract: smd code marking sot23 RF Transistors sot-23 marking code LA SMD sot-23 MARKING CODE N C SMD MARKING CODE FEW SMD Transistors nc SOT SMD IC smd code marking 3 1 sot23 BF579
    Text: HIGH FREQUENCY SMD TRANSISTORS DESCRIPTION •Philips Components high-frequency transistors fill the gap between general purpose transistors and broadband transistors by offering transition frequencies from a few hundred megahertz to about 1 gigahertz. Applications


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    PDF OT-23 BFS18 BFS19 BFS20 BF840 BF841 BF579 BF536 BF767 BF824 marking NC sot23 smd code marking sot23 RF Transistors sot-23 marking code LA SMD sot-23 MARKING CODE N C SMD MARKING CODE FEW SMD Transistors nc SOT SMD IC smd code marking 3 1 sot23

    transistor smd LC 77

    Abstract: smd transistor ISS smd transistor 2x5 BLT81 smd transistor ISS 7 MAM043 C4901
    Text: Philips Semiconductors Product specif ication UHF power transistor BLT81 FEATURES • SMD encapsulation • Gold metallization ensures excellent reliability. APPLICATIONS • Hand-held radio equipment in the 900 MHz communication band. DESCRIPTION NPN silicon planar epitaxial transistor encapsulated in a


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    PDF BLT81 OT223 OT223 MAM043- 7110fl2b MRC089 711Dfl2b S0T223. 711002b transistor smd LC 77 smd transistor ISS smd transistor 2x5 BLT81 smd transistor ISS 7 MAM043 C4901