G3 SOT 23 Search Results

marking G3

Abstract: KDS196 G3 Package g3-1 sot 23 MARKING G3 SOT-23
Contextual Info: SEMICONDUCTOR KDS196 MARKING SPECIFICATION SOT-23 PACKAGE 1. Marking method Laser Marking 2. Marking No. 0 1 G3 1 2 Item Marking Description Device Mark G3 KDS196 hFE Grade - - * Lot No. 01 1998. 1st Week [0:1st Character, 1:2nd Character] Note * Lot No. marking method

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS196 SOT-23 Switching Diode FEATURES Low forward voltage Fast reverse recovery time MARKING: G3 1 3 2 Maximum Ratings @Ta=25℃ Parameter Symbol Limit Unit Non-Repetitive Peak Reverse Voltage

ISS19

Abstract: ISS196 marking G3 1SS196
Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-23 Plastic-Encapsulate Diodes 1SS196 SOT-23 Switching DIODES FEATURES y Low forward voltage : VF 3 =0.9V(typ.) y Fast reverse recovery time : trr=1.6ns(typ.) 1. N.C. MARKING: G3 2. ANODE 3. CATHODE Maximum Ratings @TA=25℃

Contextual Info: MMBD914-G www.vishay.com Vishay Semiconductors Small Signal Switching Diode FEATURES • Silicon epitaxial planar diode 3 • Fast switching diode in case SOT-23, especially suited for automatic insertion. • AEC-Q101 qualified • Base P/N-G3 - green, commercial grade

Contextual Info: MMBD6050-G www.vishay.com Vishay Semiconductors Small Signal Switching Diode FEATURES • Silicon epitaxial planar diode 3 • Fast switching diode in case SOT-23, especially suited for automatic insertion. • AEC-Q101 qualified • Base P/N-G3 - green, commercial grade

Contextual Info: IMBD4448-G www.vishay.com Vishay Semiconductors Small Signal Switching Diode FEATURES • Silicon epitaxial planar diode 3 • Fast switching diode in case SOT-23, especially suited for automatic insertion. • AEC-Q101 qualified • Base P/N-G3 - green, commercial grade

Contextual Info: IMBD4148-G www.vishay.com Vishay Semiconductors Small Signal Switching Diode FEATURES • Silicon epitaxial planar diodes 3 • Fast switching diode in case SOT-23, especially suited for automatic insertion. • AEC-Q101 qualified • Base P/N-G3 - green, commercial grade

marking G3

Contextual Info: 1SS196 Switching Diodes SOT-23 1. N.C. 2. ANODE 3. CATHODE Features — — Low forward voltage : VF 3 =0.9V(typ.) Fast reverse recovery time : trr=1.6ns(typ.) MARKING: G3 Dimensions in inches and (millimeters) Maximum Ratings @TA=25℃ Parameter Symbol Limits

bfq34 application note

Abstract: ON4497 BFQ34 sf 122 transistor
Contextual Info: Philips Semiconductors h ^ 5 3 1 3 1 DD3 1 S5 Û G3 Ö • A P X ^ P r o d u c ts p e c ific a t i^ NPN 4 GHz wideband transistor BFQ34 N AriER P H I L I P S / D I S C R E T E fc.'JE » PINNING DESCRIPTION NPN transistor encapsulated in a 4 lead SOT 122A envelope with a

AU7G

Abstract: DB3 5T B776 75AG A6J 8A x37c 73a3
Contextual Info: @>D+.<-'364 3UUR;=@A; " 9@ /;% ;+8<3<=9; " ;9.>-=$ >7 7 +;B 6KGYZWKX . - R 7H C7GA> FE; A@ 3 CJ : ;9: GA> E3 97 E75: @ A> A9J , ;I"]\#%[Oe R $@ EC; @ D;5 83 DE C75AG7C J 4 A6J 6; A67 ;  L   " -/ 7 R IEC 7? 7> J> AH C7G7CD7 C75AG7CJ 5: 3 C97 R/ > EC3 >

Contextual Info: @>D+.<-'364 3UUR;=@A;฀"9@/;฀%;+8<3<=9; ";9.>-=฀$>77+;B 6KGYZWKX . -฀ R฀ 7H฀C7GA>FE;A@3CJ฀:;9:฀GA>E397฀E75:@A>A9J ฀ , ;I"]\#%[Oe R฀$@EC;@D;5฀83DE C75AG7CJ฀4A6J฀6;A67 L ฀   ; -/ 7 R฀ IEC7?7>J฀>AH฀C7G7CD7฀C75AG7CJ฀5:3C97

Contextual Info: MMBT589LT1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 30 VOLTS, 2.0 AMPS PNP TRANSISTORS Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS TA = 25°C

MMBT589LT1

Abstract: MMBT589LT1G MMBT589LT3 MMBT589LT3G g3 ON sot-23
Contextual Info: MMBT589LT1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 30 VOLTS, 2.0 AMPS PNP TRANSISTORS Features • Pb−Free Packages are Available 3 MAXIMUM RATINGS TA = 25°C Rating Symbol

trw rf

Abstract: ACRIAN trw rf transistors acrian inc trw transistors TRW MICROWAVE acrian rf power FUJITSU MICROWAVE MRF648 TPM4130
Contextual Info: UHF AND MICROWAVE TRANSISTORS Item Number Part Number Manufacturer Max V BR CBO foac Max Gp Po N.F. at fT••t Ie Max (W) (Vl (Hz) (dB) (W) jdB) (Hz) JA) PD Mati. Toper Max jOe) Package Style UHFIMicrowave Transistors, Bipolar NPN (Cont'd) 5 10 UMOB55 RZ2731B60W

Contextual Info: MMBT589LT1G, NSVMMBT589LT1G High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 30 VOLTS, 2.0 AMPS PNP TRANSISTORS Features • AEC−Q101 Qualified and PPAP Capable  NSV Prefix for Automotive and Other Applications Requiring

NSVMMBT589

Abstract: MARKING G3 Transistor
Contextual Info: MMBT589LT1G, NSVMMBT589LT1G High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications Features http://onsemi.com 30 VOLTS, 2.0 AMPS PNP TRANSISTORS • AEC−Q101 Qualified and PPAP Capable  NSV Prefix for Automotive and Other Applications Requiring

MMBT589LT1

Abstract: MMBT589LT1G G3 SOT23-3
Contextual Info: MMBT589LT1 High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 30 VOLTS, 2.0 AMPS PNP TRANSISTORS Features • Pb−Free Packages are Available COLLECTOR 3 MAXIMUM RATINGS TA = 25°C

B0679

Abstract: 2N6852 SOM3305 solitron transistors U2T101 2N685 DIODE 6AA BSS52 B0879
Contextual Info: DARLINGTON TRANSISTORS Item Number Part Number Manufacturer V BR CEO (V) Ic Max (A) PD Max (W) fT hFE Min Max (Hz) ICBO Max (A) t, Max (8) tf Max (8) TOper Max (OC) Package Style NPN Darlington Transistors, (Co nt' d) 5 10 MMST•A28 MPS·A28 MPS·A28 BST52

Contextual Info: ON Semiconductort High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications MMBT589LT1 30 VOLTS 2.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS TA = 25°C Rating Symbol Max Unit Collector −Emitter Voltage VCEO −30

Contextual Info: High Voltage Switching Diode BAS21LT1 1 ANODE 3 CATHODE 3 MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol Value Unit VR IF 250 200 625 Vdc mAdc mAdc I FM surge 1 2 CASE 318–08, STYLE 8 SOT–23 (TO–236AB)

marking G3

Abstract: BAS21LT1 G32 diode G32 SOT23-6
Contextual Info: LESHAN RADIO COMPANY, LTD. High Voltage Switching Diode BAS21LT1 1 ANODE 3 CATHODE 3 MAXIMUM RATINGS Rating Continuous Reverse Voltage Peak Forward Current Peak Forward Surge Current Symbol Value Unit VR IF 250 200 625 Vdc mAdc mAdc I FM surge 1 2 CASE 318–08, STYLE 8

MMBT589LT1G

Contextual Info: MMBT589LT1G High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications http://onsemi.com 30 VOLTS, 2.0 AMPS PNP TRANSISTORS Features • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS Compliant

ST1536

Abstract: st433 st258 asl1000 st431 SL1010 ST1526 ST1302 tx st433 ST1556
Contextual Info: Fujitsu Microelectronics Europe User Guide FMEMCU-UG-910010-24 FR FAMILY EVALUATION BOARD SK-91460-MAIN V1.2 USER GUIDE This manual refers to PCB version V1.2 SK-91460-MAIN v1.2 Revision History Revision History Date 15.06.2005 22.06.2005 06.07.2005 18.07.2005

MMBT589LT1

Abstract: 1E-05
Contextual Info: ON Semiconductort High Current Surface Mount PNP Silicon Switching Transistor for Load Management in Portable Applications MMBT589LT1 30 VOLTS 2.0 AMPS PNP TRANSISTOR MAXIMUM RATINGS TA = 25°C Rating Symbol Max Unit Collector–Emitter Voltage VCEO –30