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    G40N Search Results

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    G40N Price and Stock

    Micro Commercial Components MCG40N10YHE3-TP

    N-CHANNEL MOSFET, DFN3333
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey () MCG40N10YHE3-TP Cut Tape 9,837 1
    • 1 $1.04
    • 10 $0.8
    • 100 $0.5457
    • 1000 $0.38761
    • 10000 $0.35971
    		Buy Now
    MCG40N10YHE3-TP Digi-Reel 9,837 1
    • 1 $1.04
    • 10 $0.8
    • 100 $0.5457
    • 1000 $0.38761
    • 10000 $0.35971
    		Buy Now
    MCG40N10YHE3-TP Reel 5,000 5,000
    • 1 -
    • 10 -
    • 100 -
    • 1000 -
    • 10000 $0.31262
    		Buy Now
    Mouser Electronics MCG40N10YHE3-TP 4,832
    • 1 $1.02
    • 10 $0.784
    • 100 $0.535
    • 1000 $0.38
    • 10000 $0.319
    		Buy Now

    Vishay Siliconix SIHG40N60E-GE3

    MOSFET N-CH 600V 40A TO247AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey SIHG40N60E-GE3 Tube 375 1
    • 1 $7.19
    • 10 $7.19
    • 100 $4.006
    • 1000 $3.44376
    • 10000 $3.44376
    		Buy Now

    Amphenol PCTEL GPS-TMG-40NCS

    RF ANT 1.575GHZ DOME N TYP F POL
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GPS-TMG-40NCS Bulk 66 1
    • 1 $168.23
    • 10 $143.459
    • 100 $140.1056
    • 1000 $140.1056
    • 10000 $140.1056
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    Richardson RFPD GPS-TMG-40NCS 25
    • 1 -
    • 10 -
    • 100 $177.49
    • 1000 $177.49
    • 10000 $177.49
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    Amphenol PCTEL GNSS1-TMG-40N

    RF ANT GNSS 40DB NF DOME
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GNSS1-TMG-40N Bulk 20 1
    • 1 $185.95
    • 10 $179.619
    • 100 $179.619
    • 1000 $179.619
    • 10000 $179.619
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    Richardson RFPD GNSS1-TMG-40N 16 1
    • 1 $225.6
    • 10 $225.6
    • 100 $225.6
    • 1000 $225.6
    • 10000 $225.6
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    Master Electronics GNSS1-TMG-40N 22
    • 1 $238.51
    • 10 $224.98
    • 100 $224.98
    • 1000 $224.98
    • 10000 $224.98
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    Amphenol PCTEL GNSS1-TMG-40NCM

    RF ANT 1.5845GHZ DOME N TYPE
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    DigiKey GNSS1-TMG-40NCM Bulk 19 1
    • 1 $179.4
    • 10 $179.4
    • 100 $179.4
    • 1000 $179.4
    • 10000 $179.4
    		Buy Now
    Master Electronics GNSS1-TMG-40NCM 1
    • 1 $252.89
    • 10 $238.54
    • 100 $238.54
    • 1000 $238.54
    • 10000 $238.54
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    Find more G40N price and stock on Findchips.com

    G40N Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    G40N60

    Abstract: G40N60UF g40n60uf circuit g40n60u 7103 KA7812 KA7812 INTEGRATED CIRCUIT transistor ka7812
    Contextual Info: TO-3PF Tube Packing Data TO-3PF Tube Packing Configuration: Figure 1.0 30 units per Tube Packaging Description: F G40N60UF 113 Bubble Sheet 12 Tubes per box TO-3PF parts are shipped in tube. The tube is made of PVC plastic treated with anti-static agent.These tubes in


    Original     		G40N60UF 570x150x48 590x330x245 KA7812-AE IMSYS777 A710103105 G40N60 G40N60UF g40n60uf circuit g40n60u 7103 KA7812 KA7812 INTEGRATED CIRCUIT transistor ka7812 PDF

    40n60c3

    Abstract: g40n6 RHRP30120 40N60C3R 0n60 TA49049 40N60C RHRP30120 equivalent HGTG40N60C3R LD26
    Contextual Info: [ /Title HGT G40N6 0C3R /Subject (75A, 600V, Rugged, UFS Series NChannel IGBT) /Autho r () /Keywords (Intersil Corporation, semiconductor, Avalanche Energy Rated, Switch ing Power Supplies, Power T CT DUC PRO PRODU E T E E L T O U OBS UBSTIT 0C3 6 S N E


    Original     		G40N6 40n60c3 g40n6 RHRP30120 40N60C3R 0n60 TA49049 40N60C RHRP30120 equivalent HGTG40N60C3R LD26 PDF

    G40N60

    Abstract: HGTG40N60C3 LD26 RHRP3060 g40n60c3
    Contextual Info: G40N60C3 Data Sheet January 2000 75A, 600V, UFS Series N-Channel IGBT Features The G40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction


    Original     		HGTG40N60C3 HGTG40N60C3 150oC. 100ns 150oC G40N60 LD26 RHRP3060 g40n60c3 PDF

    G40N60B3

    Contextual Info: G40N60B3 Data Sheet November 2004 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60B3 PDF

    G40N60

    Abstract: HGTG40N60B3 equivalent g40n60b g40n60b3 hgtg40n60b3 TA49052 LD26 RHRP3060 transistor* igbt 70A 300 V DSA003678
    Contextual Info: G40N60B3 Data Sheet December 2001 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 HGTG40N60B3 equivalent g40n60b g40n60b3 TA49052 LD26 RHRP3060 transistor* igbt 70A 300 V DSA003678 PDF

    G40N60

    Abstract: g40n60c3d HGT1Y40N60C3D HGTG40N60C3 RHRP3060 TA49063 TA49389
    Contextual Info: HGT1Y40N60C3D Data Sheet December 2001 75A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGT1Y40N60C3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


    Original     		HGT1Y40N60C3D HGT1Y40N60C3D 150oC. TA49273. TA49063. 100ns 150oC G40N60 g40n60c3d HGTG40N60C3 RHRP3060 TA49063 TA49389 PDF

    G40N60

    Abstract: g40n60c3 HGTG40N60C3 LD26 RHRP3060 g40n
    Contextual Info: G40N60C3 Data Sheet December 2001 75A, 600V, UFS Series N-Channel IGBT Features The G40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction


    Original     		HGTG40N60C3 HGTG40N60C3 150oC. 100ns 150oC G40N60 g40n60c3 LD26 RHRP3060 g40n PDF

    HGTG40N60B3 equivalent

    Abstract: G40N60 g40n60b3 HGTG40N60B3 transistor C110 LD26 RHRP3060 TA49052 g40n6
    Contextual Info: G40N60B3 Data Sheet January 2000 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC HGTG40N60B3 equivalent G40N60 g40n60b3 transistor C110 LD26 RHRP3060 TA49052 g40n6 PDF

    G40N60

    Abstract: g40n60b3 g40n60b g40n60b3 igbt 40N60B3 TA49052
    Contextual Info: CB H G T G 40N 60B 3 70A, 600V, UFS Series N-Channel IGBT November 1997 Features Description • 70A, 600V, T c = 2 5 °C The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.


    OCR Scan     		HGTG40N60B3 G40N60B3 1-800-4-HARRIS G40N60 g40n60b3 g40n60b g40n60b3 igbt 40N60B3 TA49052 PDF

    G40N60

    Abstract: g40n60b3 HGTG40N60B3 equivalent TA49052 g40n60b HGTG40N60B3 LD26 RHRP3060
    Contextual Info: G40N60B3 Data Sheet August 2003 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 g40n60b3 HGTG40N60B3 equivalent TA49052 g40n60b LD26 RHRP3060 PDF

    schema de branchement top 243 y

    Abstract: GTDM120A 350w schematic diagram dc motor control schematic diagram 415VAC to 24VDC POWER SUPPLY su kam pic GUVT120 interposing CT GG10S GSTR024D gw 6203
    Contextual Info: GE Energy Industrial Solutions DEH-41 358 EntelliGuard G Power Circuit Breaker Disjoncteur de Puissance Open Vermogenschakelaar Installation, Operation and Maintenance Manual Manuel d'installation, d'opération et de maintenance Installatie-, Gebruikers- en Onderhoudshandleiding


    Original     		DEH-41 NL-7482 D-24534 F-95958 B-9000 schema de branchement top 243 y GTDM120A 350w schematic diagram dc motor control schematic diagram 415VAC to 24VDC POWER SUPPLY su kam pic GUVT120 interposing CT GG10S GSTR024D gw 6203 PDF

    G40N120FL2

    Contextual Info: G40N120FL2WG IGBT - Field Stop II This Insulated Gate Bipolar Transistor IGBT features a robust and cost effective Field Stop II Trench construction, and provides superior performance in demanding switching applications, offering both low on state voltage and minimal switching loss. The IGBT is well suited


    Original     		NGTG40N120FL2WG NGTG40N120FL2W/D G40N120FL2 PDF

    G40N60

    Abstract: g40n60b3 igbt G40N60B3 HGTG40N60B3 equivalent HGTG40N60B3 LD26 RHRP3060 TA49052 g40n60b
    Contextual Info: G40N60B3 Semiconductor 70A, 600V, UFS Series N-Channel IGBT November 1997 Features Description • 70A, 600V, TC = 25oC The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.


    Original     		HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 g40n60b3 igbt G40N60B3 HGTG40N60B3 equivalent LD26 RHRP3060 TA49052 g40n60b PDF

    GG40H1

    Abstract: GTG00K1-SF GG32N GCCN240R GG50M GTDM120A GG32N6 GTG00K9-4SF GG40N1 GW04M
    Contextual Info: 102003 GE Industrial Solutions GE Energy Industrial Solutions Industrial Solutions formerly Power Protection , a division of GE Energy, is a first class European supplier of low and medium voltage products including wiring devices, residential and industrial electrical distribution components,


    Original     		I/3288/G/G GG40H1 GTG00K1-SF GG32N GCCN240R GG50M GTDM120A GG32N6 GTG00K9-4SF GG40N1 GW04M PDF

    65e9 transistor

    Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
    Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12


    Original     		1-888-INTERSIL MS-012AA MO-153AA RF1K49090 RF1K49093 RF1K49092 ITF87056DQT ITF87072DK8T ITF87008DQT RF1K49223 65e9 transistor transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note PDF

    g40n60b3d

    Abstract: G40N60 g40n60b3 hgtg40n60b3 g40n60b TA49052 tr c110 HGT1Y40N60B3D RHRP3060 TA49063
    Contextual Info: HGT1Y40N60B3D Data Sheet December 2001 70A, 600V, UFS Series N-Channel IGBT with Anti-Parallel Hyperfast Diodes The HGT1Y40N60B3D is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input


    Original     		HGT1Y40N60B3D HGT1Y40N60B3D 150oC. TA49052. TA49063. g40n60b3d G40N60 g40n60b3 hgtg40n60b3 g40n60b TA49052 tr c110 RHRP3060 TA49063 PDF

    G40N60B3

    Abstract: G40N60
    Contextual Info: G40N60B3 S E M I C O N D U C T O R 70A, 600V, UFS Series N-Channel IGBT November 1997 Features Description • 70A, 600V, TC = 25oC The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.


    Original     		HGTG40N60B3 HGTG40N60B3 150oC. G40N60B3 1-800-4-HARRIS G40N60B3 G40N60 PDF

    G40N60

    Abstract: g40n60b3 igbt G40N60b3 HGTG40N60B3 LD26 RHRP3060 TA49052
    Contextual Info: G40N60B3 S E M I C O N D U C T O R 70A, 600V, UFS Series N-Channel IGBT April 1997 Features Description • 70A, 600V, TC = 25oC The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar transistor.


    Original     		HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC 1-800-4-HARRIS G40N60 g40n60b3 igbt G40N60b3 LD26 RHRP3060 TA49052 PDF

    G40N60

    Abstract: g40n60c3 HGTG40N60C3 ge 047 TRANSISTOR LD26 RHRP3060 TA49273
    Contextual Info: G40N60C3 Data Sheet January 2000 75A, 600V, UFS Series N-Channel IGBT Features The G40N60C3 is a MOS gated high voltage switching device combining the best features of a MOSFET and a bipolar transistor. These devices have the high input impedance of a MOSFET and the low on-state conduction


    Original     		HGTG40N60C3 HGTG40N60C3 150oC. 100ns 150oC G40N60 g40n60c3 ge 047 TRANSISTOR LD26 RHRP3060 TA49273 PDF

    G40N60

    Abstract: g40n60b3 HGTG40N60B3 equivalent TA49052 HGTG40N60B3 LD26 RHRP3060 g40n60b
    Contextual Info: G40N60B3 Data Sheet January 2000 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 g40n60b3 HGTG40N60B3 equivalent TA49052 LD26 RHRP3060 g40n60b PDF

    G40N60

    Abstract: G40N60B3 HGTG40N60B3 equivalent HGTG40N60B3 LD26 RHRP3060 TA49052 g40n60b3 igbt
    Contextual Info: G40N60B3 Data Sheet November 2004 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a MOSFET and the low on-state conduction loss of a bipolar


    Original     		HGTG40N60B3 HGTG40N60B3 150oC. 100ns 150oC G40N60 G40N60B3 HGTG40N60B3 equivalent LD26 RHRP3060 TA49052 g40n60b3 igbt PDF

    G40N60

    Abstract: g40n60b3 g40n60b HGTG40N60B3 equivalent TSC900 TA49052 C110 HGTG40N60B3 LD26 110CI
    Contextual Info: in t e G40N60B3 r r ii J a n u a ry . D ata S h eet m 70A, 600V, UFS Series N-Channel IGBT Features The G40N60B3 is a MOS gated high voltage switching device combining the best features of MOSFETs and bipolar transistors. The device has the high input impedance of a


    OCR Scan     		HGTG40N60B3 HGTG40N60B3 TA49052. O-247 G40N60 g40n60b3 g40n60b HGTG40N60B3 equivalent TSC900 TA49052 C110 LD26 110CI PDF