G4800LD Search Results

G4800LD

Abstract: DMG4800LSD DMG4800LSDQ-13
Contextual Info: DMG4800LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary V BR DSS Features and Benefits RDS(on) max ID max TA = 25°C 16mΩ @ VGS = 10V 9.8A 22mΩ @ VGS = 4.5V 8.4A • • • • • • 30V Mechanical Data Description and Applications • •

g4800ld

Abstract: DMG4800LSD J-STD-020D
Contextual Info: DMG4800LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET NEW PRODUCT Please click here to visit our online spice models database. Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage

G4800LD

Contextual Info: DMG4800LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on max ID max TA = +25°C •  16mΩ @ VGS = 10V 9.8A  Low Qg - minimizes switching losses 8.4A  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)

G4800LD

Contextual Info: DMG4800LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary RDS on max ID max TA = +25°C •  16mΩ @ VGS = 10V 9.8A  Low Qg - minimizes switching losses 8.4A  Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)  Halogen and Antimony Free. “Green” Device (Note 3)

Contextual Info: DMG4800LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data • • • • • • • • • Low On-Resistance Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Lead Free By Design/RoHS Compliant Note 1 "Green" Device (Note 2)

Contextual Info: DMG4800LSD DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features and Benefits Product Summary V BR DSS RDS(on) max ID max TA = 25°C 16mΩ @ VGS = 10V 9.8A 22mΩ @ VGS = 4.5V 8.4A • • • • • • 30V Mechanical Data Description and Applications • •