G654 Search Results

RMPA2450

Abstract: C4 MMIC HIGH POWER AMPLIFIER 5 W FOR 2.4 GHz F245
Contextual Info: RMPA2450 2.4 to 2.5 GHz GaAs MMIC Power Amplifier PRODUCT INFORMATION Description Features Absolute Ratings Electrical Characteristics Note 4, At 25°C, Zo=50 Ohms, Unless Otherwise Noted The Fairchild RF RMPA2450 is a fully matched monolithic power amplifier in a surface

RCI-0402-10R0J

Abstract: RAYTHEON RMBA09500-58 grm39 GRM36COG8R2B50 OIP35 grm36cog101j50
Contextual Info: RF Components RMBA09500-58 - Cellular 2 Watt Linear GaAs MMIC Power Amplifier PRODUCT INFORMATION Description Features Electrical Characteristics2 Absolute Ratings The RMBA09500 is a high power, highly linear Power Amplifier. The two stage circuit uses Raytheon

RAYTHEON

Abstract: RMBA09500-58
Contextual Info: RMBA09500-58 Cellular 2 Watt Linear GaAs MMIC Power Amplifier ADVANCED INFORMATION Description Features The RMBA09500 is a high power, highly linear Power Amplifier. The two stage circuit uses Raytheon’s pHEMT process. It is designed for use as a driver stage for Cellular base stations, or as the output stage for Micro- and

GRM39COG100J050AD

Abstract: PCS1900 RMBA19500-58 RMBA19500A RMBA19500A-TB g655
Contextual Info: RMBA19500A PCS1900 2 Watt GaAs MMIC Power Amplifier General Description Features The RMBA19500A is a highly linear Power Amplifier. The two stage circuit uses our pHEMT process. It has been designed for use as a driver stage for PCS1900 base stations, or as the output stage for Micro- and Pico-Cell

12 volts 50 watt amplifier schematic diagram

Abstract: schematic diagram power amplifier free schematic diagram power amplifier free a C3216X5R1A475KT 2 Watt rf Amplifier gsm signal amplifier circuit diagram RAYTHEON RMBA09500-58 G655966 2200J
Contextual Info: Raytheon Raytheon Commercial Electronics RMBA09500-58 Cellular/GSM 2 Watt Linear GaAs MMIC Power Amplifier The RMBA09500 is a high power, highly linear Power Amplifier. The two stage circuit uses RaytheonÕs pHEMT process. It is designed for use as a driver

Contextual Info: RMBA19500A PCS1900 2 Watt GaAs MMIC Power Amplifier General Description Features The RMBA19500A is a highly linear Power Amplifier. The two stage circuit uses our pHEMT process. It has been designed for use as a driver stage for PCS1900 base stations, or as the output stage for Micro- and Pico-Cell

LTC4098-3.6

Contextual Info: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2 C!"3 A2 EC!"38    ( 1

Sn92

Abstract: 9553 3M BA09 fan 7073 RAYTHEON raytheon ref RMBA09500-58 1008HS-390TKBC
Contextual Info: RMBA09500-58 Cellular 2 Watt Linear GaAs MMIC Power Amplifier ADVANCED INFORMATION Description Features The RMBA09500 is a high power, highly linear Power Amplifier. The two stage circuit uses Raytheon’s pHEMT process. It is designed for use as a driver stage for Cellular base stations, or as the output stage for Micro- and

RMPA2450

Abstract: RMPA2550 RF power amplifier MHz
Contextual Info: RMPA2450 2.4–2.5 GHz GaAs MMIC Power Amplifier General Description Features The Fairchild RMPA2450 is a fully monolithic power amplifier in a surface mount package for use in wireless applications in the 2.4 to 2.5GHz ISM frequency band. The amplifier may be biased for linear, class AB or class F for

9452

Abstract: 9715 RAYTHEON RMPA2450-53 RMLA3565-53 RO4003
Contextual Info:   5D\WKHRQ&RPPHUFLDO OHFWURQLFV RMLA3565-53 Wideband Low Noise MMIC Amplifier Description The Raytheon RMLA3565-53 is a single bias wideband low noise MMIC amplifier that meets the following specifications over the 3.5 - 6.5 GHz frequency range. The MMIC requires no external matching circuits and no external gate bias

Contextual Info: T-1-3/4, Right-Angle LED Assem bly G65XB Series Snap-together Style dea The G65XB series of right-angle indicators is made of interlocking units. This series is available with leads cut to 4 mm as standard. In addition to the variety of lamps listed below, most T-1-3/4 LEDs, from blue to super bright red, can be special

GRM39COG100J050AD

Abstract: RMBA19500 RMBA19500-TB
Contextual Info: RMBA19500 PCS 2 Watt Linear GaAs MMIC Power Amplifier General Description Features The RMBA19500 is a highly linear Power Amplifier. The circuit uses our pHEMT process. It has been designed for use as a driver stage for PCS base stations, or as the output stage for Micro- and Pico-Cell base stations. The

G653B

Contextual Info: T-1-3/4, Right-Angle LED Assembly G65XB Series Snap-together Style The G65XB series of right-angle indicators is made of interlocking units. This series is available with leads cut to 4 mm as standard. In addition to the variety of lamps listed below, most T-1-3/4 LEDs, from blue to super bright red, can be special ordered.

Contextual Info: RMPA2450 2.4–2.5 GHz GaAs MMIC Power Amplifier General Description Features The Fairchild RMPA2450 is a fully monolithic power amplifier in a surface mount package for use in wireless applications in the 2.4 to 2.5GHz ISM frequency band. The amplifier may be biased for linear, class AB or class F for

RAYTHEON

Abstract: RMBA09501 RMBA09501-58
Contextual Info: RMBA09501-58 Cellular 2 Watt Linear GaAs MMIC Power Amplifier ADVANCED INFORMATION Description Features The RMBA09501 is a high power, highly linear Power Amplifier. The two stage circuit uses Raytheon’s pHEMT process. It is designed for use as a driver stage for Cellular base stations, or as the output stage for Micro- and

Contextual Info: RMBA19500 PCS 2 Watt Linear GaAs MMIC Power Amplifier General Description Features The RMBA19500 is a highly linear Power Amplifier. The circuit uses our pHEMT process. It has been designed for use as a driver stage for PCS base stations, or as the output stage for Micro- and Pico-Cell base stations. The

GRM36COG101J50

Abstract: RMBA09501-58 RMBA09501A RMBA09501A-58 ba095 GRM39Y5V104Z50 grm39
Contextual Info: RF Components RMBA09501A-58 - Cellular 2 Watt Linear GaAs MMIC Power Amplifier ADVANCED INFORMATION Description Features Electrical Characteristics2 Absolute Ratings The RMBA09501A is a high power, highly linear Power Amplifier. The two stage circuit uses Raytheon

RMBA09501

Abstract: RMBA09501-58 2 Watt rf Amplifier grm39 fr4 metal slug
Contextual Info: RF Components RMBA09501-58 - Cellular 2 Watt Linear GaAs MMIC Power Amplifier ADVANCED INFORMATION Description Features Electrical Characteristics2 Absolute Ratings The RMBA09501-58 is a highly linear Power Amplifier. The two stage circuit uses Raytheon RF

RAYTHEON

Abstract: LL1608-FH5N6S RMPA0913C-58
Contextual Info:
  R aytheon Commercial E lectronics RMPA0913C-58 3.5V AMPS/CDMA Power Amplifier Description The RMPA0913C-58 is a monolithic high efficiency power amplifier for AMPS/ CDMA dual mode applications in the 824 to 849 MHz frequency band. Performance parameters may be slightly adjusted by “tweaking” off-chip

G65XB

Abstract: G652B G651B G654B SG-660
Contextual Info: T-1-3/4, Right-Angle LED Assembly G65XB Series Snap-together Style The G65XB series of right-angle indicators is made of interlocking units. This series is available with leads cut to 4 mm as standard. In addition to the variety of lamps listed below, most T-1-3/4 LEDs, from blue to super bright red, can be special ordered.

RAYTHEON

Abstract: GRM39COG100J050AD RMBA19500 RMBA19500-58 03-o Raytheon Application Note DCS-1800
Contextual Info: Raytheon Raytheon Commercial Electronics RMBA19500-58 PCS/DCS1800 2 Watt Linear GaAs MMIC Power Amplifier The RMBA19500 is a high power, highly linear Power Amplifier. The circuit uses RaytheonÕs pHEMT process. It has been designed for use as a driver stage for PCS/DCS1800 base stations, or as the output stage for

M2541

Contextual Info: 23456784539A6BCDEF7C699345674F976BCDEF7C6 A2 C!"3 A2 EC!"38    ( 1

fan 7073

Abstract: pin configuration of 8251 GRM39COG100J050AD PCS1900 RMBA19500A RMBA19500A-58 GRM39Y5V104Z
Contextual Info: RMBA19500A-58 PCS1900 2 Watt GaAs MMIC Power Amplifier Description Features The RMBA19500A-58 is a high power, highly linear Power Amplifier. The circuit uses Raytheon’s pHEMT process. It has been designed for use as a driver stage for PCS1900 base stations, or as the output stage for Micro- and

fan 7073

Abstract: pin configuration of 8251 RAYTHEON RMBA09501-58 RMBA09501A RMBA09501A-58
Contextual Info: RMBA09501A-58 Cellular 2 Watt Linear GaAs MMIC Power Amplifier ADVANCED INFORMATION Description Features The RMBA09501A-58 is a high power, highly linear Power Amplifier. The two stage circuit uses Raytheon’s pHEMT process. It is designed for use as a driver stage for Cellular base stations, or as the output stage for Micro- and