GA100 Search Results

Contextual Info: S E M I C O N D U C T O R , AND NETWORKING Section 2 - Data Sheets Data Sheets COMPUTING I N C GA1000 Custom Clock Generator. 2-3 GA1085 11-Output Configurable Clock B uffe r. 2-19

GA100TS60SF

Contextual Info: Bulletin I27201 rev. A 01/06 GA100TS60SF "HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT Features • • • • • VCES = 600V Standard Speed PT Igbt Technology Fred PT Antiparallel diodes with Fast recovery Very Low Conduction Losses Al2O3 DBC UL Pending

GA100TS120UPBF

Contextual Info: Preliminary Data Sheet I27243 12/06 GA100TS120UPbF "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features VCES = 1200V • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode

GA100NA60UP

Contextual Info: GA100NA60UP Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

application notes igbt induction heating

Abstract: VS-GA100NA60UP
Contextual Info: VS-GA100NA60UP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Warp 2 Speed IGBT , 100 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

GA100NA60U

Abstract: ga100na60
Contextual Info: PD - 94290 GA100NA60U INSULATED GATE BIPOLAR TRANSISTOR Ultra-FastTM Speed IGBT Features 3 • UltraFastTM: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

VS-GA100TS60SFPBF

Contextual Info: VS-GA100TS60SFPbF www.vishay.com Vishay Semiconductors “Half-Bridge” IGBT INT-A-PAK, Standard Speed IGBT , 100 A FEATURES • Standard speed PT IGBT technology • Optimized for hard switching speed • FRED Pt antiparallel diodes with fast recovery

TE 555-1

Abstract: 419 on 80 GA201A 2n3031 2n2031
Contextual Info: Micmsemj Silicon Controlled Rectifiers Part Num ber GA200 GA200A GA300 GA300A GA201 GA201A GA301 GA301A GA100 GA101 GA102 2N3027 2N3Q30 ID100 JAN2N3027 JAN2N3030 JANTX2N3027 JANTX2N3030 2N3028 2N3031 AA100 AA107 AA114 ID101 JAN2N3028 JAN2N3031 JANTX2N3028

photodiode dvd cd

Abstract: GA100T802MZ1 GA100TX02MZA opic DVD GA100T8
Contextual Info: GA100T802MZ1 GA100TX02MZA OPIC Light Detector *OPIC Light Detector for 16x Speed DVD-ROM Features Outline Dimensions Unit:mm 5.55 (1.295) 9 8 13 12 11 10 .6 φ1 5.0 14 Detector Center 0.895 ( 1 ) OPIC light detector with built-in RF amplifier (Integrates PIN photodiode and Amp. IC onto

GA100TS120U

Contextual Info: PD - 5.060A PRELIMINARY GA100TS120U "HALF-BRIDGE" IGBT INT-A-PAK Ultra-FastTM Speed IGBT Features • Generation 4 IGBT technology • UltraFast: Optimized for high operating frequencies 8-40 kHz in hard switching, >200 kHz in resonant mode • Very low conduction and switching losses

GA100TS60SFPbF

Contextual Info: GA100TS60SFPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 100 A FEATURES • Standard speed PT IGBT technology • Standard speed: DC to 1 kHz, optimized for hard switching speed • FRED Pt antiparallel diodes with fast recovery

igbt 100

Abstract: GA100TS60SF GA100TS60SFPbF
Contextual Info: GA100TS60SFPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 100 A FEATURES • Standard speed PT IGBT technology • Standard speed: DC to 1 kHz, optimized for hard switching speed • FRED PtTM antiparallel diodes with fast recovery

width50s

Abstract: GA100TS120UPBF
Contextual Info: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

photodiode dvd cd

Abstract: GA100T802MZ GA100TX02MZ PHOTODIODE ALARM CIRCUIT 555 opic opic DVD
Contextual Info: Under development GA100TX02MZ GA100T802MZ New product OPIC Light Detector OPIC Light Detector for x16 Speed DVD-ROM Features Outline Dimensions 1.295 13 12 11 10 Φ 9 8 5.0 14 1.6 Detector Center 1 2 3 4 5 6 7 Terminal connection GA100TX02MZ 1 2 3 4 5 6

GA100TS120UPBF

Contextual Info: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

E78996 datasheet bridge

Contextual Info: GA100TS120UPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

GA100NA60U

Abstract: IC 7400 IGBT MODULE
Contextual Info: PD - 94290 GA100NA60U INSULATED GATE BIPOLAR TRANSISTOR Ultra-FastTM Speed IGBT Features 3 • UltraFastTM: Optimized for minimum saturation voltage and operating frequencies up to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

GA100TS60SFPbF

Contextual Info: GA100TS60SFPbF Vishay High Power Products "Half-Bridge" IGBT INT-A-PAK Standard Speed IGBT , 100 A FEATURES • Standard speed PT IGBT technology • Standard speed: DC to 1 kHz, optimized for hard switching speed • FRED Pt antiparallel diodes with fast recovery

VS-GA100TS120UPBF

Contextual Info: VS-GA100TS120UPbF www.vishay.com Vishay Semiconductors INT-A-PAK “Half-Bridge” Ultrafast Speed IGBT , 100 A FEATURES • Generation 4 IGBT technology • Ultrafast: Optimized for high speed 8 kHz to 40 kHz in hard switching, > 200 kHz in resonant mode

E78996

Abstract: tig ac inverter circuit IR E78996 tig welding E78996 datasheet bridge tig welding machine irf e78996 GA100TS60SQ tig welding half bridge
Contextual Info: Bulletin I27119 rev. B 06/02 GA100TS60SQ "HALF-BRIDGE" IGBT INT-A-PAK Standard Speed IGBT Features • • • • • • VCES = 600V Generation 4 Standard Speed IGBT Technology QuietIR Antiparallel diodes with Fast Soft recovery Very Low Conduction Losses

GA100NA60UP

Abstract: ultrafast igbt information OF ic 7400
Contextual Info: GA100NA60UP Vishay High Power Products Insulated Gate Bipolar Transistor Ultrafast Speed IGBT , 50 A FEATURES • Ultrafast: Optimized for minimum saturation voltage and speed 0 to 40 kHz in hard switching, > 200 kHz in resonant mode • Very low conduction and switching losses

GA100TS120K

Abstract: ic tb 1245
Contextual Info: PRELIMINARY GA100TS120K ]HALF-BRODGE” IGBT INT-A -PAK Short Circuit Rated Ultra-FastTM Speed IGBT Features • • VCES=1200V Generation 5 IGBT NPT technology

Contextual Info: GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack VDS VDS ON ID RDS(ON) Features Package •        RoHS Compliant 175 °C maximum operating temperature Temperature independent switching performance Gate oxide free SiC switch

Contextual Info: GA100SICP12-227 Silicon Carbide Junction Transistor/Schottky Diode Co-pack Features Package •          RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Integrated SiC Schottky Rectifier