GA1A Search Results

GA1A1S201WP

Abstract: photodiode CIE eye response opic CD
Contextual Info: GA1A1S201WP GA1A1S201WP Surface-mount Package OPIC Logarithmic Output Ambient Light Sensor • Description ■ Agency Approvals The GA1A1S201WP is an surface-mount ambient light sensor with a spectral response similar to that of the human eye. This response curve means the sensor

GA1AUV100WP

Contextual Info: AMBIENT LIGHT SENSORS / UV LIGHT SENSORS OPTO ★ Under • Ambient Light Sensors Ta = 25°C Absolute maximum ratings Model No. development Type Package Built-in amplification circuit Peak sensitivity characteristic close to human visual sensitivity GA1A2S100SS

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE GA1A4Z A MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR FEATURES PACKAGE DIMENSIONS • Resistor Built-in TYPE in millimeters o—VW Ri ='10 left Ri • Complementary to G N 1A 4Z ABSOLUTE M AXIM UM RATINGS

Contextual Info: Technical Document Optoelectronics Specification EC/Opto Group GA1A1S204WP OPIC Light Detector Product Specification February 2009 Surface Mount Detector with Dynamic Range of 3 to 55,000 lx, extended operating temperature range. Technical Document Opto Specification

electronic eye sensor

Abstract: 55000lx human eye GA1A1S203WP
Contextual Info: Tech Today New Product Information Ambient Light Sensor GA1A1S203WP Features Sensitivity characteristics n Logarithmic output n Thinnest in the industry with a compact package 1.6 x 2.0 × 0.42 mm n Stable output current over the specified temperature range

MT460

Abstract: TI08 marking ti08 27ie fg m 004 26 01 3905g F0429 0429
Contextual Info: S t • 2 /— K NEC m • Compound Transistor /V t 7L ï t GA1A4Z *m ft m W B 0 o L 7 X |j £ # t £ T ^ W Ì : mm) t < ( R i = 10 k Q ) OE t O G N 1A 4Z ^ >7° U / ]) T '£ t t ( fÊ * h ft* 5 Ë fê (Ta = 25 °C) II 3 u ? ^ x - l ^ . - < _ x ^ 'E G E

ITE 8511

Abstract: MT 6235 3e tRANSISTOR transistor 3E ISK092 T108 transistor A4p 54 A04g la 5531
Contextual Info: C o m p o u n d T r a n s is to r GA1A4P ftwm mt : mm # m. 2 . 1 + 0. 1 ( R i = 10 f â , R 2= 4 7 kû) 1.25 ±0.1 )C 3 _ oG t rj N 1A 4P > 7° >J 9 y 9 >) T f ë f B T ë î t c (T a = m • a u ^ 'X ; ~ -y 9 i Hg. X fa H E E •;9Wi‘m±. ■ ^ V 9 9 % !ëÊ ( Ï Ë

GA1A1S201WP

Contextual Info: Technical Document Optoelectronics Specification EC/Opto Group GA1A1S201WP OPIC Light Detector Product Specification October 2006 Linear output Light Detector with a dynamic range of 3 to 55,000 lx and extended operating temperature. Technical Document Opto Specification

GA1A2S100SS

Abstract: GA1A2S100LY ICC-325 D1-A00501EN home automation CIRCUIT DIAGRAM "Ultrasonic Sensor" for medical
Contextual Info: GA1A2S100SS/GA1A2S100LY GA1A2S100SS/ GA1A2S100LY OPIC Linear Output Ambient Light Sensor • Features ■ Agency Approvals/Compliance 1. Linear output, suitable for indoor or outdoor use 2. Light sensitivity and response curve similar to that of the human eye

C2016

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE G N 1A 3Q MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS • Resistors Built-in TYPE in millimeters R ! = 1.0 k fi R2 = 10 k£2 • Complementary to GA1A3Q ABSOLUTE M A X IM U M RATINGS

transistor a4z

Contextual Info: DATA SHEET AdLib OCR Evaluation NEC SILICON TRANSISTOR ELECTRON DEVICE GN1A4Z MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES PACKAGE DIMENSIONS in millimeters 0 Resistor Built-in TYPE C B 2.1+0.1 R1 = 10 kE2 RI 1.25±0.1 E Complementary to GA1A4Z

Contextual Info: DATA SHEET MEC / “ “ SILICO N TRANSISTO R / GA1A3Q M EDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR FEATURES PACKAGE DIMENSIONS • Resistors B u iit-in TYPE in m illim e te rs O— \ R i = I.O k fi R2 = 1 0 k f i EE • C om plem entary to G N 1 A 3 Q

Contextual Info: DATA SHEET NEC SILICO N TRAN SISTO R ELECTRON DEVICE GA1A4P M EDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR F E A TU R E S PACKAG E D IM E N S IO N S • Resistors Built in TYPE in m i ll i m e t e r s H W R i =10 kn V = 4 7 ktt • C o m plem entary to G N 1A 4P

GA1A1S202WP

Contextual Info: Technical Document Optoelectronics Specification EC/Opto Group GA1A1S202WP OPIC Light Detector Product Specification November 2007 Surface Mount Detector 555 nm with Dynamic Range of 3 to 55,000 lx, extended operating temperature range. REFERENCE REFERENCE

marking "l34"

Abstract: transistor bt 370
Contextual Info: DATA SHEET SILICON TRANSISTOR ELECTRON OEVICE GA1A4P MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR FEATURES PACKAGE D IM EN SIO N S • Resistors Built-in TYPE in millimeters R l = 1 0 k£2 R 2 = 4 7 k£2 • Complementary to GN1A4P ABSOLUTE M A X IM U M R ATIN G S

ga1a2s100ss

Abstract: GA1A2S100LY PCB design layout of gas leakage alarm alcohol sensor data sheet linear light sensor home automation CIRCUIT DIAGRAM
Contextual Info: GA1A2S100SS/GA1A2S100LY GA1A2S100SS/ GA1A2S100LY OPIC Linear Output Ambient Light Sensor • Features ■ Agency Approvals/Compliance 1. Linear output, suitable for indoor or outdoor use 2. Light sensitivity and response curve similar to that of the human eye

GA1A1S100WP

Abstract: GA1A1S100 eiaj-c3 ga1a
Contextual Info: ED-07G020 ay 25,2007 H E R E S OPTO-ANALOG DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION f DEVICE SPECIFICATION FOR OPIC LIGHTDETECTOR MODEL No. GA1A1S100WP Specified for Enclosed please find copies of the Specifications which consists of 17 pages including cover.

Contextual Info: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE • GIM1A4P _ MEDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE PNP TRANSISTOR FEATURES • PACKAGE DIMENSIONS Resistors Built-in TYPE in millimeters Ri = 10 kŒ R2 = 4 7 k£2 • Complementary to GA1A4P

eiaj-c3

Abstract: GA1A1S201WP ED-06G070
Contextual Info: SPEC. No. ED-06G070 ISSUE October 12,2006 SHARP OPTO-ANALOG DEVICES DIVISION ELECTRONIC COMPONENTS GROUP SHARP CORPORATION SPECIFICATION “ DEVICE SPECIFICATION FOR OPIC LIGHT DETECTOR MODEL No. GA1A1S201WP Specified for Enclosed please find copies of the Specifications which consists of 14 pages including cover.

N1A4M

Contextual Info: DATA SHEET NEC SILICON TRANSISTO R ELECTRON DEVICE GA1A4M M EDIUM SPEED SW ITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR FEATURES PACKAGE DIMENSIONS • Resistors B u ilt-in TYPE in millimeters O -A A A r R i = 1 0 kS > R2 = 10 k fl • C om plem entary to G N 1A 4M

L6820

Abstract: transistor 3BU
Contextual Info: DATA SHEET NEC / ElfCTRONDEVICE _ / SILICO N TRAN SISTO R / GA1A4Z M EDIUM SPEED SWITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR FE A TU R E S PACKAGE DIMENSIONS • Resistor B u ilt-in TYPE in millimeters I. • R t = 10 kf2 C om ptem entary to G N 1 A 4 Z

L33 TRANSISTOR

Abstract: TC-2160 marking l33
Contextual Info: DATA SHEET NEC SILICON TRANSISTOR ELECTRON DEVICE G A 1A 4M M ED IU M SPEED SW ITCHING RESISTOR BUILT-IN TYPE NPN TRANSISTOR FEATURES PACKAGE DIMENSIONS • Resistors Built-in T Y P E in millimeters B] = 10 ki2 R 2 = 10 k i î • Com plem entary to G N 1 A 4 M

PC925LE

Abstract: GP2Y0A60 pc815xnns pc3sd13 GP2Y0A02YK PR36MF51NS PC357NJ0000F
Contextual Info: OPTO • Photocoupler PHOTOCOUPLER LINEUP Lineup <Phototransistor output type> Output type Single phototransistor Features Model No. series General purpose, High collector-emitter voltage Low input current AC input response Darlington phototransistor High sensitivity,

Laser Diode 405 nm Sharp

Abstract: LR36B15 LR388K4 Laser Diodes 405 nm catalog PQ1LAxx5MSPQ Series
Contextual Info: Electronic Components http://sharp-world.com/products/device/ March 2015 2015-03 CONTENTS TFT LCD 2 LCD Modules. 2 Imaging CMOS IMAGE SENSORS / CCDs 6 CMOS Camera Modules Road Map. 6