GA200SA60S Search Results

GA200SA60SP

Contextual Info: Bulletin I27235 07/06 GA200SA60SP Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package 2,500 volt AC

Contextual Info: Not recommended for new design, use VS-GA250SA60S VS-GA200SA60SP www.vishay.com Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available

GA200SA60SP

Contextual Info: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Standard Speed IGBT , 100 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 1 kHz C • Lowest conduction losses available • Fully isolated package (2500 VAC)

GA200SA60SP

Contextual Info: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)

Contextual Info: PD- 5.070 International IOR Rectifier GA200SA60S INSULATED GATE BIPOLAR TRANSISTOR Standard Speed IGBT Features c • Standard: Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package 2,500 volt AC

CGC SWITCH

Abstract: transistor 342 pf GA200SA60SP
Contextual Info: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)

smps tig welding

Abstract: transistor 342 G GA200SA60SP
Contextual Info: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)

i.g.bt

Abstract: IGBT GS ga200sa60 SOT227Package
Contextual Info: GA200SA60S SOT-227 Package Details Dimensions are shown in millimeters inches 3 8 .3 0 ( 1.5 08 ) 3 7 .8 0 ( 1.4 88 ) 4 .4 0 (.17 3 ) 4 .2 0 (.16 5 ) C HAM FER 2 .0 0 ( .0 7 9 ) X 45 7 L E A D A S S IG M E N T S E -A 4 E S C 4 1 3 G E IG B T 2 5 .7 0 ( 1.0 12 )

SOT-227 heatsink

Abstract: GA200SA60S
Contextual Info: PD- 5.070 PRELIMINARY GA200SA60S Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package 2,500 volt AC

Contextual Info: I , PD- 5.070 In te rn a tio n a l lO R Rectifier PRELIMINARY GA200SA60S Standard Speed IGBT INSULATED GATE BIPOLARTRANSISTOR Features • S ta n d a rd : O ptim ize d for m inim um saturation vo lta g e and low operating fre q u e n cie s up to 1kH z • Lowest conduction losses available

GA200SA60SP

Contextual Info: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Standard Speed IGBT , 100 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 1 kHz C G RoHS • Fully isolated package (2500 VAC) COMPLIANT • Very low internal inductance (5 nH typical)

GA200SA60SP

Contextual Info: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Standard Speed IGBT , 100 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 1 kHz C G RoHS • Fully isolated package (2500 VAC) COMPLIANT • Very low internal inductance (5 nH typical)

GA200SA60SP

Abstract: GA200SA60S
Contextual Info: GA200SA60SP Vishay Semiconductors Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)

GA200SA60SP

Abstract: smps tig welding transistor 342 G
Contextual Info: GA200SA60SP Vishay High Power Products Insulated Gate Bipolar Transistor Ultralow VCE on , 342 A FEATURES • Standard: Optimized for minimum saturation voltage and low speed up to 5 kHz • Lowest conduction losses available • Fully isolated package (2500 VAC)

GA200SA60S

Contextual Info: PD- 50070A / 5)$5 Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package 2,500 volt AC)

irfb4115

Abstract: BTY79 equivalent diode skn 21-04 marking CODE W04 sot-23 bbc 598 479 DIODE mw 137 600g TFK 401 S 673 Vishay Telefunken tfk transistor INFINEON transistor marking W31 JYs marking transistor
Contextual Info: 573 Technical portal and online community for Design Engineers - www.element-14.com Discrete & Power Devices Page 700 Bridge Rectifiers . . . . . . . . . . . . . . . . . . . . . . . . Diodes Schottky . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .

IRU1239SC

Abstract: iru1239 Full-bridge IR2110 Class-D ir2010 PWM IR2112 IRF540 ir21065 full bridge ir2110 h-bridge irfz44n IRVCM10A 600V 300A igbt dc to dc boost converter
Contextual Info: SHENZHEN SHOUHE TECHNOLOGY CO., LTD. TEL: 0755-8380 8450 FAX: 0755-8380 8425 Part Information PartNo Function Line Pkg 100MT160PAPBF Discrete IRCI Module MTP 100MT160PA Discrete IRCI Module MTP 100MT160PBPBF Discrete IRCI Module MTP IRCI Module MTP IRCI Module MTK

HEXFET

Abstract: GA200TD120U GA500TD60U GA100TS60U
Contextual Info: International Rectifier COLOR CODING: EXISTING Products The Switch Module Navigator NEW Products released to production in last 69 months UPCOMING Products to be released within next 3-4 months POTENTIAL Products no current plans. see bus.mgmt. Effective 14 June, 1999

IRG41BC20W

Abstract: IRG41BC20UD Drive circuit for IGBT using IR2130 IR2184 application notes IR2110 driver CIRCUIT FOR INVERTERS DC MOTOR SPEED CONTROL USING IGBT IRG41BC30W IR2181 application notes IR2103 bldc driver 1KW dc motor
Contextual Info: TABLE OF CONTENTS Selection Guides Fast Diode Die Data Sheets FRED Die Data Sheets HEXFET Power MOSFET Die Data Sheets HEXFRED® Rectifier Die Data Sheets IC Data Sheets IGBT Die Data Sheets IGBT Modules for Motor Drive & UPS IGBT Modules for Motor Drives in Industrial Electric Vehicles

IC 50061

Abstract: FA57SA50LC 50071 GA400TD25S FB180SA10 GA600GD25S CHOPPER GA200TD120U GA200SA60U GA200NS61U
Contextual Info: International Rectifier COLOR CODING: EXISTING Products The Switch Module Navigator NEW Products released to production in last 69 months UPCOMING Products to be released within next 3-4 months POTENTIAL Products no current plans. see bus.mgmt. Effective 22 July, 1998

IRF 3250

Abstract: IRf 334 irf 1402 irf 2117 cry 152 H22B1 EFG13C ec75 HFA16PB120 FA57SA50LC
Contextual Info: Semiconductor Directory ManufacturerÕs Code Log AGT ADI AMD AVX COL CRY Agilent Technologies Analog Devices Inc. Advanced Micro Devices AVX Collmer Semiconductors, Inc. Crydom Company Mfr.Õs Type Price DLS EPC FSC GIS IRF INT Mfr.Õs Code Page Dallas Semiconductor

GA200SA60S

Contextual Info: PD- 50070A / 5)$5 Standard Speed IGBT INSULATED GATE BIPOLAR TRANSISTOR Features C • Standard : Optimized for minimum saturation voltage and low operating frequencies up to 1kHz • Lowest conduction losses available • Fully isolated package 2,500 volt AC)

IRG4BC20UD

Abstract: CPV362M4F irg4ph50ud GA400TD25S IRG4PC50 CPV362M4U
Contextual Info: IGBTs www.irf.com V CES Collector-to-Emitter Voltage V Part Number Max. V CE(on) Collector-to-Emitter Voltage (V) IC Continuous Collector Current T C =25°C TC =25°C (A) (A) PD Max. Power Dissipation (W) Fax on Demand Number Case Outline Key Discrete High Efficiency WARP(tm) Speed

IRFBE30 equivalent

Abstract: irf9640 REPLACEMENT GUIDE IRGKI200F06 IRGP440U replacement IRF3205 smd IRGBC20FD2 IRFK3D450 IRFBg30 equivalent IRGNIN150M06 irc540
Contextual Info: Electronic Switches Catalog of Available Documents Revised 8/27/98 www.irf.com IR ProCenter Fax-On-Demand 310 252-7100  HEXFET Power MOSFETs Description Gen Package Document # Pages Date 11 10 12 7 May-97 May-97 91615 91650 91651 90454 90592 90565 90566