GA50JT17 Search Results

Contextual Info: GA50JT17-CAL Section VII: SPICE Model Parameters This is a secure document. Please copy this code from the SPICE model PDF file on our website into LTSPICE (version 4) software for simulation of the GA50JT17-CAL.

Contextual Info: GA50JT17-CAL Normally – OFF Silicon Carbide Junction Transistor VDS RDS ON ID (Tc = 25°C) hFE (Tc = 25°C) = = = = 1700 V 25 mΩ 100 A 95 Features •        250°C maximum operating temperature Gate Oxide Free SiC switch Exceptional Safe Operating Area

Contextual Info: GA50JT17-247 Section VII: SPICE Model Parameters Please copy this code from the SPICE model into LTSPICE version 4 software for simulation of the GA50JT17-247. * MODEL OF GeneSiC Semiconductor Inc. * * $Revision: 2.2 $ * $Date: 29-JAN-2015 $ * * GeneSiC Semiconductor Inc.

Contextual Info: GA50JT17-247 Normally – OFF Silicon Carbide Junction Transistor Features Package •         RoHS Compliant 175 °C Maximum Operating Temperature Gate Oxide Free SiC Switch Exceptional Safe Operating Area Excellent Gain Linearity

Contextual Info: GA03IDDJT30-FR4 Isolated Gate Driver Gate Driver for SiC SJT with Output and Signal Isolation Features •       VISOLATION PDRIVE fmax = = = 3000 V 5W 350 kHz Product Image Requires single 12 V voltage supply Pin Out compatible with MOSFET driver boards