GAAS DIODE NM MW Search Results
GAAS DIODE NM MW Result Highlights (5)
| Part | ECAD Model | Manufacturer | Description | Download | Buy |
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| CUZ30V |
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Zener Diode, 30 V, USC |
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| CUZ24V |
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Zener Diode, 24 V, USC |
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| CUZ36V |
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Zener Diode, 36 V, USC |
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| CUZ20V |
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Zener Diode, 20 V, USC |
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| CUZ12V |
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Zener Diode, 12 V, USC |
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GAAS DIODE NM MW Datasheets Context Search
| Catalog Datasheet | Type | Document Tags | |
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Contextual Info: GaAs-Infrarot-Lumineszenzdiode mit erhöhter Strahlungsleistung 950 nm GaAs Infrared Emitting Diode(950 nm, Enhanced Power) F 0118G Vorläufige Daten / Preliminary data Wesentliche Merkmale Features • Typ. Gesamtleistung: 20 mW @ 100 mA im TOPLED Gehäuse |
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0118G | |
DIN 7967
Abstract: TEST2600 TSSS2600
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TSSS2600 TSSS2600 TEST2600 2002/95/EC 11-Mar-11 DIN 7967 TEST2600 | |
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Contextual Info: TSAL5100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 96 11505 DESCRIPTION TSAL5100 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power, molded |
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TSAL5100 2002/95/EC 2002/96/EC TSAL5100 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
TSUS5400
Abstract: TSUS5401 TSUS TSUS5402 TSUS-5402
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TSUS5400, TSUS5401, TSUS5402 TSUS5400 2002/95/EC 2002/96/EC 18-Jul-08 TSUS5401 TSUS TSUS5402 TSUS-5402 | |
Infrared Emitting Diode
Abstract: TEST2600 TSSS2600
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TSSS2600 TSSS2600 TEST2600 2002/95/EC 18-Jul-08 Infrared Emitting Diode TEST2600 | |
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Contextual Info: TSAL5100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 96 11505 DESCRIPTION TSAL5100 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power, molded |
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TSAL5100 2002/95/EC 2002/96/EC TSAL5100 11-Mar-11 | |
GMOY6177
Abstract: "Infrared LED" 880 nm Pulsed Forward Current
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0235F GMOY6177 "Infrared LED" 880 nm Pulsed Forward Current | |
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Contextual Info: TSAL5100 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 96 11505 DESCRIPTION TSAL5100 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power, molded |
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TSAL5100 TSAL5100 2002/95/EC 2002/95/EC. 2011/65/EU. JS709A 02-Oct-12 | |
F 0094UContextual Info: GaAs-Infrarot-Lumineszenzdiode 950 nm, 300 µm Kantenlänge GaAs Infrared Light Emitting Diode (950 nm, 12 mil) F 0094U F 0094V Vorläufige Daten / Preliminary data Wesentliche Merkmale Features • Typ. Gesamtleistung: 15 mW @ 100 mA im TOPLED Gehäuse |
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0094U F 0094U | |
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Contextual Info: TSUS4400 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4400 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. The device is spectrally matched to silicon photodetectors. |
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TSUS4400 TSUS4400 2002/95/EC 2002/96/EC 08-Apr-05 | |
TSUS4400Contextual Info: TSUS4400 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4400 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. The device is spectrally matched to silicon photodetectors. |
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TSUS4400 TSUS4400 2002/95/EC 2002/96/EC 08-Apr-05 | |
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Contextual Info: TSUS4400 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4400 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. The device is spectrally matched to silicon photodetectors. |
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TSUS4400 TSUS4400 2002/95/EC 2002/96/EC D-74025 08-Mar-05 | |
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Contextual Info: TSAL5300 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 96 11505 DESCRIPTION TSAL5300 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in |
Original |
TSAL5300 2002/95/EC 2002/96/EC TSAL5300 2011/65/EU 2002/95/EC. 2011/65/EU. 12-Mar-12 | |
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Contextual Info: TSAL5300 www.vishay.com Vishay Semiconductors High Power Infrared Emitting Diode, 940 nm, GaAlAs/GaAs FEATURES • • • • • • • • • • • • • 96 11505 DESCRIPTION TSAL5300 is an infrared, 940 nm emitting diode in GaAlAs/GaAs technology with high radiant power molded in |
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TSAL5300 TSAL5300 2002/95/EC 11-Mar-11 | |
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TSAL5100
Abstract: high power infrared led Infrared Emitting Diode GaAs 1000 nm Infrared Diode,
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TSAL5100 TSAL5100 2002/95/EC 2002/96/EC 18-Jul-08 high power infrared led Infrared Emitting Diode GaAs 1000 nm Infrared Diode, | |
optokoppler
Abstract: GaAs wafer dicing Chip free
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1235B 1235C optokoppler GaAs wafer dicing Chip free | |
GMOY6078
Abstract: Q65110A0136
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0118G GMOY6078 Q65110A0136 | |
GCOY6878Contextual Info: GaAs-Infrarot-Lumineszenzdiode 950 nm, Enhanced Power GaAs Infrared Emitting Diode (950 nm, Enhanced Power) F 0118J Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Typ. Gesamtleistung: 24 mW @ 100 mA im TOPLED Gehäuse • Chipgröße 300 x 300 µm2 |
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0118J GCOY6878 | |
TSUS4300Contextual Info: TSUS4300 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4300 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. Its lens provides a high radiant intensity without external optics. |
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TSUS4300 TSUS4300 2002/95/EC 2002/96/EC 08-Apr-05 | |
TSUS4300Contextual Info: TSUS4300 Vishay Semiconductors Infrared Emitting Diode, 950 nm, GaAs Description TSUS4300 is an infrared emitting diode in standard GaAs on GaAs technology, molded in a clear, blue tinted plastic package. Its lens provides a high radiant intensity without external optics. |
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TSUS4300 TSUS4300 2002/95/EC 2002/96/EC D-74025 08-Mar-05 | |
k 7947 e
Abstract: TSUS4300
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TSUS4300 TSUS4300 2002/95/EC 2002/96/EC 08-Apr-05 k 7947 e | |
GMOY6178Contextual Info: GaAs-Infrarot-Lumineszenzdiode 950 nm, 300 µm Kantenlänge GaAs Infrared Emitting Diode (950 nm, 12 mil) F 0594A Vorläufige Daten / Preliminary Data Wesentliche Merkmale Features • Typ. Gesamtleistung: 15 mW @ 100 mA im TOPLED Gehäuse • Chipgröße 300 x 300 µm2 |
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F 1235A
Abstract: 1235a F1235A
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OPTOKOPPLERContextual Info: GaAs-Infrarot-Lumineszenzdiode 950 nm, 250 µm Kantenlänge GaAs Infrared Emitting Diode (950 nm, 10 mil) F 0235D Vorläufige Daten / Preliminary data Wesentliche Merkmale Features • Typ. Gesamtleistung: 13 mW @ 100 mA im TOPLED Gehäuse • Chipgröße 250 x 250 µm2 |
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0235D OPTOKOPPLER | |