GAAS FET VHF UHF Search Results

F 739 DC

Abstract: gaas fet vhf uhf F1215 Q62702-F1215 gaas fet marking a MARKING CF AC 1507 -0720 CF739ms
Contextual Info: GaAs FET CF 739 Features N-channel dual-gate GaAs MES FET ● Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners ● Low noise ● High gain ● Low input capacitance ● ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: HA21001MS VHF/UHF Tuner Use GaAs IC Features • Covers VHF and UHF frequencies • Contains local OSC FETs, double balance mixer and IF amp dual gate FET • Low noise, low distortion • Surface mount package UHF RF input VHF RF input 2 1 18 AC GND2 AC GND1

0949

Abstract: F 739 DC Q62702-F1215
Contextual Info: CF 739 GaAs FET ● ● ● ● ● CF 739 N-channel dual-gate GaAs MES FET Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners Low noise High gain Low input capacitance ESD: Electrostatic discharge sensitive device, observe handling precautions!

transistor marking 7D

Abstract: marking MS 7d marking "marking ms"
Contextual Info: SIEMENS GaAs FET CF 739 Features • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device, observe handling precautions!

Contextual Info: SIEMENS GaAs FET CF 739 Features • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device, observe handling precautions!

CF739

Abstract: 7S66 1 928 300 599 marking MS "marking ms"
Contextual Info: SIEMENS GaAs FET CF 739 Features • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device, observe handling precautions!

Type CF 739 Marking Ordering Code MSs

Abstract: SOT143 marking code 11s VTA-100
Contextual Info: CF 739 GaAs FET 3 • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal 4 applications up to 2 GHz, e.g. VHF, UHF, Sat-TV tuners 2 • Low noise • High gain 1 VPS05178 • Low input capacitance ESD: Electrostatic discharge sensitive device, observe handling precaution!

smd transistor marking cf

Abstract: transistor smd CF F 739 DC cf739 Q62702-F1215 F1215 CF 309 CF MARKING CODE gaas fet marking a MARKING CF
Contextual Info: GaAs FET CF 739 Data Sheet • • N-channel dual-gate GaAs MESFET Depletion mode transistor for tuned small-signal applications up to 2 GHz, e.g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device,

transistor smd cf

Abstract: CF 309 smd transistor marking cf g1 TRANSISTOR SMD MARKING CODE TRANSISTOR SMD MARKING CODE 352 EHT07318
Contextual Info: GaAs FET CF 739 Data Sheet • • N-channel dual-gate GaAs MESFET Depletion mode transistor for tuned small-signal applications up to 2 GHz, e.g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device,

HA21001MS

Abstract: ha21001
Contextual Info: HA21001 MS VHF/UHF Tuner Use GaAs IC Features • Covers VHF and UHF frequencies • Contains local OSC FETs, double balance mixer and IF amp dual gate FET • Low noise, low distortion • Surface mount package Pin Arrangement 4—' 3 Q_ C •»-* 3 Q_ C

gaas fet vhf uhf

Abstract: ha21001 HA21001MS C4466 MSP-18 ha2100 2200p
Contextual Info: HITACHI/ LINEAR DEVICES 2bE J> 4McJb2DE 0 0 1 1 3 5 T 4 H A 2 1 0 0 1 M S - - T*T7-OS-OS- VHF/UHF Tuner Use GaAs 1C Features HA21001MS • Covers VHF and UHF frequencies • Contains local OSC FETs, double balance mixer and IF amp dual gate FET

transistor marking YD ghz

Abstract: EHT07317
Contextual Info: Infineon fsclin clog iei GaAs FET CF 739 Data Sheet • N-channel dual-gate GaAs MESFET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e.g. VHF, UHF, Sat-TV tuners • Low noise • High gain • Low input capacitance ESD: Electrostatic discharge sensitive device,

3sk272

Contextual Info: High Frequency FETs 3SK272 GaAs N-Channel MES FET For VHF-UHF amplification unit: mm 2.1±0.1 • Features 0.425 1.25±0.10 0.425 Gate 2 to Source voltage Drain current Gate 1 current Gate 2 current Allowable power dissipation Channel temperature Storage temperature

2SK66

Contextual Info: 2SK1092 - Preliminary SIE D • SINGLE GATE GaAs M ES FET HITACHI/ OPTOELECTRONICS VHF/UHF W IDE BAND AMPLIFIER I MMTbEQS 0011700 071 ■ HITM OUTLINE DRAWING ■ A B S O L U T E M AXIMUM R A T IN G S

Contextual Info: High Frequency FETs 3SK273 GaAs N-Channel MES FET For VHF-UHF amplification unit: mm +0.2 2.8 –0.3 • Features +0.2 0.65±0.15 ● Low noise-figure NF ● Large power gain PG ● Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.

3SK241

Contextual Info: High Frequency FETs 3SK241 GaAs N-Channel MES FET For VHF-UHF amplification unit: mm +0.2 2.8 –0.3 • Features +0.2 0.65±0.15 ● Low noise-figure NF ● Large power gain PG ● Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.

3SK273

Contextual Info: High Frequency FETs 3SK273 GaAs N-Channel MES FET For VHF-UHF amplification unit: mm +0.2 2.8 –0.3 • Features +0.2 0.65±0.15 ● Low noise-figure NF ● Large power gain PG ● Mini-type package, allowing downsizing of the sets and automatic insertion through the tape/magazine packing.

Contextual Info: SIEMENS CF 739 GaAs FET F eatures • N -channel d u a l-g a te G aA s M E S FET • D epletion m ode tran sisto r for tuned sm all-signal ap p lica tio ns up to 2 G Hz, e. g. VHF, UHF, S at-TV tuners • Low noise • High gain • Low input ca p a citan ce

3sk272

Abstract: IG2D
Contextual Info: High Frequency FETs 3SK272 GaAs N-Channel MES FET For VHF-UHF amplification unit: mm 2.1±0.1 • Features 0.425 1.25±0.10 0.425 13 V Gate 1 to Source voltage VG1S −6 V Gate 2 to Source voltage VG2S −6 V Drain current ID 50 mA Gate 1 current IG1 1 mA

2SK1092

Abstract: 2SK666
Contextual Info: 2SK1092 Preliminary SINGLE GATE GaAs MES FET VHF/UHF WIDE BAND AMPLIFIER • OUTLINE DRAWING 1.8 Z ;£T rJ = m 0~0 1 ;ä : 1• 2. 3. 4. Source G ate NC D rain Dim ensions in mra (MPAK-4) I ABSOLUTE MAXIMUM RATINGS (To-25*C ) Item Drain to Source Voltage

CF739 R

Abstract: CF739 siemens gaas fet
Contextual Info: 32E D • 023ti3SQ 0G17342 1 H S I P GaAsFET SIEMENS/ SPCL*. SEMICONDS CF739 T 'S I- a S ' • N-channel dual-gate GaAs MES FET • Depletion mode transistor for tuned small-signal applications up to 2 GHz, e. g. VHF, UHF, Sat-TV tuners • Low noise • High gain

3SK273

Contextual Info: High Frequency FETs 3SK273 GaAs N-Channel MES FET For VHF-UHF amplification unit: mm +0.2 M Di ain sc te on na tin nc ue e/ d 2.8 –0.3 • Features 0.65±0.15 V −6 V Gate 2 to Source voltage VG2S −6 V Drain current ID 50 mA Gate 1 current IG1 1 mA Gate 2 current

3SK241

Contextual Info: High Frequency FETs 3SK241 GaAs N-Channel MES FET For VHF-UHF amplification unit: mm +0.2 M Di ain sc te on na tin nc ue e/ d 2.8 –0.3 • Features 0.65±0.15 VG1S −6 V Gate 2 to Source voltage VG2S −6 V Drain current ID 50 mA Gate 1 current IG1 1 mA

3sk272

Abstract: SC-82
Contextual Info: High Frequency FETs 3SK272 GaAs N-Channel MES FET For VHF-UHF amplification M Di ain sc te on na tin nc ue e/ d unit: mm 2.1±0.1 • Features 0.425 0.425 V Gate 1 to Source voltage VG1S −6 V Gate 2 to Source voltage VG2S −6 V Drain current ID 50 mA Gate 1 current